Page 1
®
STPS10L60CF/CFP
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
2x5A
60 V
Tj (max) 150 °C
V
(max) 0.52 V
F
FEATURES AND BENEFITS
LOW FORWARD VOLTAGE DROP
■
NEGLIGIBLE SWITCHING LOSSES
■
INSULATED PACKAGE:
■
Insulating voltage = 2000V DC
Capacitance = 12pF
AVALANCHE CAPABILITY SPECIFIED
■
DESCRIPTION
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in ISOWATT220AB, TO-220FPAB this
device is intended for use in high frequency
inverters.
A1
A2
A1
ISOWATT220AB
STPS10L60CF
K
A1
A2
K
A2
K
TO-220FPAB
STPS10L60CFP
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage
RMS forward current
Average
forward current
I
FSM
I
RRM
P
ARM
T
stg
Tj
dV/dt
dPtot
*:
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current tp=2µssquare F = 1kHz
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
<
dTj Rth j a
July 2003 - Ed: 3C
ISOWATT220AB
TO220FPAB
Tc =130°C
δ = 0.5
Per diode
Per device
thermal runaway condition for a diode on its own heatsink
−1()
60 V
30 A
5
10
180 A
1A
4000 W
- 65 to + 175 °C
150 °C
10000 V/µs
A
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STPS10L60CF/CFP
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
Junction to case ISOWATT220AB TO-220FPAB
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
Per Diode
Total
4.5
3.5
Coupling 2.5 °C/W
th(c)
°C/W
*
I
R
Reverse leakage current Tj = 25°C V
R=VRRM
Tj = 125°C
V
*
F
Forward voltage drop Tj = 25°CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
=5A
F
=5A
F
=10A
F
=10A
F
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P = 0.4x I
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
F(AV)
+ 0.024 I
δ = 0.05
F2(RMS)
δ = 0.1
IF(av) (A)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
Fig. 2: Average current versus ambient
temperature (δ=0.5) (per diode).
IF(av)(A)
6
5
4
3
2
1
tp
=tp/T
δ
0
0 25 50 75 100 125 150
220 µA
45 60 mA
0.55 V
0.43 0.52
0.67
0.55 0.64
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T
tp
Tamb(°C)
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Page 3
STPS10L60CF/CFP
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB, TO-220FPAB).
IM(A)
90
80
70
60
50
40
30
20
IM
10
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=25°C
Tc=75°C
Tc=125°C
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
Fig. 6: Relative variation of thermal transient
impedance junction to case versus pulse duration.
(ISOWATT220AB, TO-220FPAB).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
δ = 0.5
0.4
δ = 0.2
0.2
δ = 0.1
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0 1E+1
tp(s)
δ
=tp/T
T
tp
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
IR(mA)
3E+2
1E+2
1E+1
1E+0
1E-1
1E-2
1E-3
0 5 10 15 20 25 30 35 40 45 50 55 60
Tc=150°C
Tc=125°C
Tc=100°C
Tc=75°C
Tc=50°C
Tc=25°C
VR(V)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
1000
500
200
VR(V)
100
1 10 100
F=1MHz
Tj=25°C
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STPS10L60CF/CFP
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
100.0
Tj=150°C
(typical values)
10.0
Tj=25°C
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Tj=125°C
VFM(V)
PACKAGE MECHANICAL DATA
ISOWATT220AB
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
B 2.50 2.70 0.098 0.106
D 2.50 2.75 0.098 0.108
E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.40 2.70 0.094 0.106
H 10.00 10.40 0.394 0.409
L2 16.00 Typ. 0.630Typ.
L3 28.60 30.60 1.125 1.205
L4 9.80 10.60 0.386 0.417
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366
Diam 3.00 3.20 0.118 0.126
■
Cooling method: C
■
Recommended torque value: 0.55 m.N
■
Maximum torque value: 0.70 m.N
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PACKAGE MECHANICAL DATA
TO-220FPAB
H
Dia
L6
L2
L3
L5
D
L4
G1
G
F1
F2
F
STPS10L60CF/CFP
REF. DIMENSIONS
Millimeters Inches
A
B
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
L7
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
E
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
Min. Max. Min. Max.
Ordering type Marking Package Weight Base qty Delivery mode
STPS10L60CF STPS10L60CF ISOWATT220AB 2.08g 50 Tube
STPS10L60CF STPS10L60CF ISOWATT220AB 2.08g 1000 Bulk
STPS10L60CFP STPS10L60CFP TO-220FPAB 2 g 50 Tube
■
Epoxy meets UL94,V0
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change without notice. This publication supersedes and replaces all information previously supplied.
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