Datasheet STPS10L45CT, STPS10L45CF, STPS10L45CFP Datasheet (SGS Thomson Microelectronics)

Page 1
®
STPS10L45CT/CG/CF/CFP
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
2x5 A
45 V
Tj (max) 150°C
V
(max) 0.46 V
F
FEATURES AND BENEFITS
LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES LOW SWITCHING LOSSES ALLOWING HIGH
FREQUENCY OPERATION INSULATED PACKAGE: ISOWATT220AB,
TO-220FPAB Insulating voltage = 2000V DC
TO-220FPAB
STPS10L45CFP
Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters.
Packaged in TO-220AB, ISOWATT220AB, TO-220FPAB and D
2
PAK, these devices are
intended for use in low voltage, high frequency
TO-220AB
STPS10L45CT
inverters, free-wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
Tj
dV/dt
dPtot
*:
dTj Rth j a
July 2003 - Ed: 3B
Repetitive peak reverse voltage RMS forward current Average
forward current
TO-220AB D2PAK
ISOWATT220AB TO-220FPAB
Tc =135°C δ = 0.5
Tc =115°C
δ = 0.5 Surge non repetitive forward current tp = 10 ms Sinusoidal Repetitive peak reverse current tp=2µssquare F=1kHz Non repetitive peak reverse current tp = 100 µs square Repetitive peak avalanche power tp = 1µs Tj = 25°C Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage
<
thermal runaway condition for a diode on its own heatsink
−1()
A1
A2
A2
K
A1
A2
K
A1
Per diode Per device
Per diode Per device
K
K
A2
A1
2
PAK
D
STPS10L45CG
A1
ISOWATT220AB
STPS10L45CF
45 V 20 A
5
10
5
10
150 A
1A 2A
2700 W
- 65 to + 150 °C 150 °C
10000 V/µs
A2
K
A
A
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Page 2
STPS10L45CT/CG/CF/CFP
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
R
R
th (j-c)
th (c)
th (j-c)
th (c)
Junction to case TO-220AB
D2PAK
Junction to case
ISOWATT220AB TO-220FPAB
Per diode
Total
3
1.7
Coupling 0.35
Per diode
Total
5
3.8
Coupling 2.5
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
V
F
Reverse leakage current
*
Forward voltage drop Tj = 25°CI
Tj = 25°C V Tj = 125°C
Tj = 125°C I Tj=25°CI Tj = 125°C I
R=VRRM
=5A
F
=5A
F
=10A
F
=10A
F
45 90 mA
0.36 0.46
0.49 0.59
0.15 mA
0.53 V
0.67
°C/W
°C/W
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation : P=0.33xI
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
F(AV)
δ = 0.05
+ 0.026 I
δ = 0.1
IF(av) (A)
F2(RMS)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
Fig. 2: Average forward current versus ambient temperature (δ=0.5, per diode).
IF(av)(A)
6 5 4 3 2
tp
1
=tp/T
δ
0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
TO-220AB/D²PAK
TO-220FPAB ISOWATT220AB
T
tp
Tamb(°C)
Rth(j-a)=15°C/W
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STPS10L45CT/CG/CF/CFP
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB and D
IM(A)
100
90 80 70 60 50 40 30
IM
20 10
0 1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
2
PAK).
Tc=25°C Tc=75°C
Tc=125°C
Fig. 4: Normalized avalanche power derating versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2 1
0.8
0.6
0.4
0.2 0
0 25 50 75 100 125 150
T (°C)
j
Fig. 5-2: Non repetitive surge peak forward
current versus overload duration (maximum values, per diode) (ISOWATT220AB, TO-220FPAB).
IM(A)
80 70 60 50 40 30 20
IM
10
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=25°C
Tc=75°C
Tc=125°C
Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration. (TO-220AB and D
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
0.0 1E-3 1E-2 1E-1 1E+0
Single pulse
2
PAK).
tp(s)
δ
=tp/T
T
tp
Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration. (ISOWATT220AB, TO-220FPAB).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
0.0 1E-3 1E-2 1E-1 1E+0 1E+1
Single pulse
tp(s)
δ
=tp/T
T
tp
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STPS10L45CT/CG/CF/CFP
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
IR(mA)
1E+2
1E+1
Tj=150°C
Tj=125°C
Tj=100°C
1E+0
1E-1
1E-2
Tj=25°C
VR(V)
1E-3
0 5 10 15 20 25 30 35 40 45
Fig. 9: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A)
100.0
Tj=150°C
Typical values
10.0
Tj=125°C
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Tj=25°C
VFM(V)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
1000
F=1MHz
Tj=25°C
100
VR(V)
10
12 51020 50
Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm)( D
Rth(j-a) (°C/W)
80 70 60 50 40 30 20 10
0
0 4 8 12 16 20 24 28 32 36 40
S(Cu) (cm²)
2
PAK).
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PACKAGE MECHANICAL DATA
TO-220AB
H2
Dia
L5
L6
L2
F2 F1
F
G1
G
L9
L4
STPS10L45CT/CG/CF/CFP
DIMENSIONS
REF.
A
C
A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107
L7
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
D
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ. L4 13 14 0.511 0.551
M
E
L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
Millimeters Inches
Min. Max. Min. Max.
PACKAGE MECHANICAL DATA
TO-220FPAB
H
Dia
L6
L2
L3
L5
D
L4
G1
G
F1
F2
F
REF. DIMENSIONS
A
B
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039
L7
F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409 L2 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142
E
L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
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STPS10L45CT/CG/CF/CFP
PACKAGE MECHANICAL DATA
2
PAK
D
E
L2
L
L3
A1
B2 B
G
* FLAT ZONE NO LESSTHAN 2mm
C2
DIMENSIONS
A
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009
D
B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
C
R
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
A2
L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069
M
*
V2
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ. V2
FOOT PRINT DIMENSIONS (in millimeters)
16.90
10.30
1.30
3.70
8.90
5.08
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PACKAGE MECHANICAL DATA
ISOWATT220AB
STPS10L45CT/CG/CF/CFP
DIMENSIONS
REF.
A 4.40 4.60 0.173 0.181 B 2.50 2.70 0.098 0.106 D 2.50 2.75 0.098 0.108 E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.40 2.70 0.094 0.106
H 10.00 10.40 0.394 0.409 L2 16.00 typ. 0.630 typ. L3 28.60 30.60 1.125 1.205 L4 9.80 10.60 0.386 0.417 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366
Diam 3.00 3.20 0.118 0.126
Millimeters Inches
Min. Max. Min. Max.
Ordering type Marking Package Weight Base qty
Delivery
mode
STPS10L45CT STPS10L45CT TO-220AB 2.23g 50 Tube
STPS10L45CFP STPS10L45CFP TO-220FPAB 2 g 50 Tube
STPS10L45CG STPS10L45CG D²PAK 1.48g 50 Tube
STPS10L45CG-TR STPS10L45CG D²PAK 1.48g 1000 Tape & reel
STPS10L45CF STPS10L45CF ISOWATT220AB 2.08g 50 Tube
Cooling method : by conduction (C)
Recommended torque value : 0.55 N.m.
Maximum torque value : 0.70 N.m.
Epoxy meets UL94,V0
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