HIGH JUNCTION TEMPERATURE CAPABILITY
FOR CONVERTERS LOCATED IN CONFINED
ENVIRONMENT.
LOW LEAKAGE CURRENT AT HIGH
TEMPERATURE.
LOW STATIC AND DYNAMIC LOSSES AS A
RESULT OF THE SCHOTTKY BARRIER.
DESCR IPT ION
Schottky barrier rectifier designed for high
frequency miniature Switched Mode Power
Supplies such as adaptators and on board
DC/DC converters. Packaged in TO220AB,
per device
Surge non repetitive forward currenttp = 10 ms sinusoidal180A
Repetitive peak reverse currenttp = 2 µs square F = 1kHz 1A
Storage temperature range- 65 to + 175
stg
5
10
°
TjMaximum operating junction temperature *175° C
dV/dtCritical rate of rise of reverse voltage10000V/µs
dPtot
* :
July 1999 - Ed: 1B
dTj
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
A
C
1/6
Page 2
STPS10H100CT/C G/CG - 1
THERMAL RESISTANCES
SymbolParameterValueUnit
R
R
th (j-c)
th (c)
Junction to casePer diode2.2
When the diodes 1 and 2 are used simultaneously :
∆
Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
Total1.3
Coupling0.3
th(c)
°
C/W
°
C/W
STATIC ELECTRICAL CHARACTER ISTICS
(per diode)
SymbolParameterTests conditionsMin.Typ.Max.Unit
I
*Reverse leakage currentTj = 25°CV
R
= V
R
RRM
3.5
Tj = 125°C1.34.5mA
V
**Forward voltage dropTj = 25°CI
F
= 5 A0.73V
F
Tj = 125°C0.570.61
Tj = 25°CI
= 10 A0.85
F
Tj = 125°C0.660.71
Pulse test :* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the foll owing equati on :
P = 0.51 x I
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