Datasheet STPS10H100CT, STPS10H100CG-1, STPS10H100CG-TR, STPS10H100CG Datasheet (SGS Thomson Microelectronics)

Page 1
®
STPS 10H1 00CT /CG/CG -1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTIC S
I
F(AV)
V
2 x 5 A
100 V
Tj 175° C
(max) 0.61 V
V
F
FEATURES AND BENEFITS
HIGH JUNCTION TEMPERATURE CAPABILITY FOR CONVERTERS LOCATED IN CONFINED ENVIRONMENT.
LOW LEAKAGE CURRENT AT HIGH TEMPERATURE.
LOW STATIC AND DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER.
DESCR IPT ION
Schottky barrier rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters. Packaged in TO220AB,
2
PAK and I2PAK.
D
A1
A2
K
A2
A1
D2PAK
STPS10H100CG
K
TO-220AB
STPS10H100CT
K
K
K
A1
I2PAK
STPS10H100CG-1
A2
K
A1
A2
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
T
Repetitive peak reverse voltage 100 V RMS forward current 10 A Average forward current Tc = 165°C
δ = 0.5
per diode
per device Surge non repetitive forward current tp = 10 ms sinusoidal 180 A Repetitive peak reverse current tp = 2 µs square F = 1kHz 1 A Storage temperature range - 65 to + 175
stg
5
10
°
Tj Maximum operating junction temperature * 175 ° C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
* :
July 1999 - Ed: 1B
dTj
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
A
C
1/6
Page 2
STPS10H100CT/C G/CG - 1
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junction to case Per diode 2.2
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
Total 1.3 Coupling 0.3
th(c)
°
C/W
°
C/W
STATIC ELECTRICAL CHARACTER ISTICS
(per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
* Reverse leakage current Tj = 25°CV
R
= V
R
RRM
3.5
Tj = 125°C1.34.5mA
V
** Forward voltage drop Tj = 25°CI
F
= 5 A 0.73 V
F
Tj = 125°C0.570.61 Tj = 25°CI
= 10 A 0.85
F
Tj = 125°C0.660.71
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the foll owing equati on : P = 0.51 x I
Fig. 1:
Average forward power dissipation versus
average forward current (per diode).
F(AV)
+ 0.02 x I
F2(RMS)
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5, per diode).
µ
A
PF(av)(W)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
δ = 0.1
δ = 0.05
δ = 0.2
IF(av) (A)
δ = 0.5
δ
δ = 1
T
=tp/T
2/6
IF(av)(A)
6 5 4 3 2
tp
1 0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
Rth(j-a)=15°C/W
Tamb(°C)
Rth(j-a)=Rth(j-c)
Page 3
STPS10H100CT/C G/CG-1
Fig. 3:
Non repetitive surge peak forward current versus overload duration (maximum values, per diode)
IM(A)
120 100
80 60 40
I
M
20
0
1E-3 1E-2 1E-1 1E+0
Fig. 5:
t
δ
=0.5
t(s)
Reverse leakage current versus reverse
Tc=50°C
Tc=75°C
Tc=125°C
voltage applied (typical values, per diode).
IR(µA)
1E+4 1E+3 1E+2
Tj=150°C Tj=125°C
Tj=100°C
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
Single pulse
0.0 1E-3 1E-2 1E-1 1E+0
Fig. 6:
Junction capacitance versus reverse
tp(s)
δ
=tp/T
T
tp
voltage applied (typical values, per diode).
C(pF)
1000
F=1MHz Tj=25°C
1E+1 1E+0
1E-1
Tj=25°C
1E-2
0 102030405060708090100
Fig. 7:
Forward voltage drop versus forward
VR(V)
current (maximum values, per diode).
IFM(A)
100.0
10.0
Tj=150°C
Typical values
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj=125°C
Typical values
Tj=125°C
Tj=25°C
VFM(V)
100
10
1 2 5 10 20 50 100
Fig. 8:
Thermal resistan ce junction to ambi ent versus copper surface under tab (Epox y pr int ed ci rc uit board FR4, copper thic kness: 35µm) (D
Rth(j-a) (°C/W)
80
VR(V)
2
PAK).
70 60 50 40 30 20 10
0
0 2 4 6 8 101214161820
S(Cu) (cm²)
3/6
Page 4
STPS10H100CT/C G/CG-1
PACKAGE ME CHANICAL D AT A
2
D
PAK
E
L2
L
L3
A1
B2
B
G
* FLAT ZONE NO LESSTHAN 2mm
C2
DIMENSIONS
A
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
D
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
C
R
D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208
A2
L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069
M
*
V2
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2
FOOT PRINT
10.30
in millimeters
16.90
8.90
5.08
1.30
3.70
4/6
Page 5
PACKAGE ME CHANICAL D AT A
2
I
PAK
E
L2
L1
L
e
b2 b1
b
c2
D
A1
STPS10H100CT/C G/CG - 1
DIMENSIONS
REF.
A
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
b 0.70 0.93 0.028 0.037 b1 1.14 1.17 0.044 0.046 b2 1.14 1.17 0.044 0.046
c 0.45 0.60 0.018 0.024
c2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
E 10.0 10.4 0.394 0.409
L 13.1 13.6 0.516 0.535 L1 3.48 3.78 0.137 0.149 L2 1.27 1.40 0.050 0.055
c
Millimeters Inches
Min. Max. Min. Max.
5/6
Page 6
STPS10H100CT/C G/CG-1
PACKAGE ME CHANICAL D AT A
TO-220AB
H2
Dia
L5
L6
L2
F2 F1
F
G1
G
L9
L4
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A
C
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107
L7
E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066
D
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
M
E
L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
Cooling method: C. Recommended torque value: 0.55 m.N Maximum torque value 0.70 m.N
Ordering type Marking Package W eight Base qty Delivery mode
STPS10H100CT STPS10H100CT TO-220AB 2.20g 50 Tube
2
STPS10H100CG STPS10H100CG D
STPS10H100CG-TR STPS10H100CG D
STPS10H100CG-1 STPS10H100CG I
PAK 1.48g 50 Tube
2
PAK 1.48g 1000 Tape and reel
2
PAK 1.49g 50 Tube
Epoxy meets UL94,V0
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