Datasheet STPS10H100CT, STPS10H100CG, STPS10H100CR, STPS10H100CFP Datasheet (ST)

®

STPS10H100CT/CG/CR/CFP

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I

F(AV)

V

RRM

2x5A

100 V

Tj 175°C

V

(max) 0.61 V

F

FEATURES AND BENEFITS

HIGH JUNCTION TEMPERATURE CAPABILITY

■

FOR CONVERTERS LOCATED IN CONFINED
ENVIRONMENT

LOW LEAKAGE CURRENT AT HIGH

■

TEMPERATURE
LOW STATIC AND DYNAMIC LOSSES AS A

■

RESULT OF THE SCHOTTKY BARRIER

■ AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Schottky barrier rectifier designed for high
frequency miniature Switched Mode Power
Supplies such as adaptators and on board
DC/DC converters. Packaged in TO-220AB,
TO-220FPAB, D

2

PAK and I2PAK.

A1

A2

K

A2

A1

D2PAK

STPS10H100CG

A1

TO-220AB

STPS10H100CT

K

K

A2

K

A1

I2PAK

STPS10H100CR

A1

A2

K

A2

K

TO-220FPAB

STPS10H100CFP

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage 100 V
RMS forward current 10 A
Average forward

current δ = 0.5

TO-220AB
D2PAK/I2PAK

Tc = 165°C per diode

per device

5

10

TO-220FPAB Tc = 160°C
I
I

P

T

FSM
RRM

ARM

Surge non repetitive forward current tp= 10 ms sinusoidal 180 A
Repetitive peak reverse current tp=2µssquare F = 1kHz 1 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 7200 W
Storage temperature range -65 to+ 175 °C

stg

Tj Maximum operating junction temperature * 175 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot

*:

<

dTj Rth j a

July 2003 - Ed: 3F

thermal runaway condition for a diode on its own heatsink

−1()

A

1/7

STPS10H100CT/CG/CR/CFP

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-c)

R

th (c)

R

th (j-c)

R

th (c)

When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Tests conditions Min. Typ. Max. Unit

I

R

V

F

Junction to case D2PAK / I2PAK

TO-220AB

Per diode 2.2 °C/W
Total 1.3
Coupling 0.3

Junction to case TO-220FPAB Per diode 4.5 °C/W

Total 3.5
Coupling 2.5

(Per diode) + P(diode 2) x R

th(j-c)

* Reverse leakage current Tj= 25°C VR=V

th(c)

RRM

3.5 µA

Tj = 125°C 1.3 4.5 mA

** Forward voltage drop Tj = 25°CI

= 5 A 0.73 V

F

Tj = 125°C 0.57 0.61
Tj=25°CI

= 10 A 0.85

F

Tj = 125°C 0.66 0.71

Pulse test : * tp=5ms,δ<2%

** tp = 380 µs, δ <2%

To evaluate the maximum conduction losses use the following equation :
P=0.51xI

Fig. 1: Average forward power dissipation versus
average forward current (per diode).

PF(av)(W)

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

F(AV)

+0.02xI

δ = 0.1

δ = 0.05

F2(RMS)

δ = 0.2

IF(av) (A)

δ = 0.5

δ

=tp/T

δ = 1

T

Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).

IF(av)(A)

6
5
4
3
2

tp

1
0

0 25 50 75 100 125 150 175

Rth(j-a)=Rth(j-c)

D²PAK/I²PAK/TO-220AB

TO-220FPAB

Rth(j-a)=15°C/W

Tamb(°C)

2/7

STPS10H100CT/CG/CR/CFP

Fig. 3: Normalized avalanche power derating ver-

sus pulse duration.

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)

IM(A)

120
100

80
60
40

IM

20

0
1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=50°C

Tc=75°C

Tc=125°C

Fig. 4: Normalized avalanche power derating
versus junction temperature.

P(t)

ARM p

P (25°C)

ARM

1.2
1

0.8

0.6

0.4

0.2
0

0 25 50 75 100 125 150

T (°C)

j

Fig.5-2: Non repetitivesurge peak forward current

versus overload duration (maximum values, per
diode)(TO-220FPAB)

IM(A)

80
70
60
50
40
30
20

IM

10

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=50°C

Tc=75°C

Tc=125°C

Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

δ = 0.2

0.4

δ = 0.1

0.2

Single pulse

0.0
1E-3 1E-2 1E-1 1E+0

tp(s)

δ

=tp/T

T

tp

Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration (per
diode).(TO-220FPAB)

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

0.4

δ

=tp/T

T

tp

3/7

δ = 0.2

0.2

δ = 0.1

0.0

Single pulse

1E-3 1E-2 1E-1 1E+0 1E+1

tp(s)

STPS10H100CT/CG/CR/CFP

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

IR(µA)

1E+4
1E+3
1E+2

Tj=150°C
Tj=125°C

Tj=100°C

1E+1
1E+0

1E-1

Tj=25°C

1E-2

0 102030405060708090100

VR(V)

Fig. 9: Forward voltage drop versus forward

current (maximum values, per diode).

IFM(A)

100.0

10.0

Tj=150°C

Typical values

1.0

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tj=125°C

Typical values

Tj=125°C

Tj=25°C

VFM(V)

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).

C(pF)

1000

F=1MHz
Tj=25°C

100

10

1 2 5 10 20 50 100

VR(V)

Fig. 10: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed
circuitboard FR4, copper thickness: 35µm)

Rth(j-a) (°C/W)

80
70
60
50
40
30
20
10

0

0 2 4 6 8 101214161820

S(Cu) (cm²)

4/7

STPS10H100CT/CG/CR/CFP

PACKAGE MECHANICAL DATA

2

PAK

D

E

L2

L

L3

A1

B2
B

G

* FLAT ZONE NO LESS THAN 2mm

C2

DIMENSIONS

A

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

A1 2.49 2.69 0.098 0.106

D

A2 0.03 0.23 0.001 0.009

B 0.70 0.93 0.027 0.037

B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024

C2 1.23 1.36 0.048 0.054

C

R

D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208

A2

L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069

M

*

V2

M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.

V2 0° 8° 0° 8°

FOOT PRINT in millimeters

16.90

10.30

8.90

5.08

1.30

3.70

5/7

PACKAGE MECHANICAL DATA

2

PAK

I

E

L2

L1

L

e

b2
b1

b

c2

D

A1

STPS10H100CT/CG/CR/CFP

DIMENSIONS

REF.

A

A 4.40 4.60 0.173 0.181

A1 2.49 2.69 0.098 0.106

b 0.70 0.93 0.028 0.037
b1 1.14 1.17 0.044 0.046
b2 1.14 1.17 0.044 0.046

c 0.45 0.60 0.018 0.024

c2 1.23 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368

e 2.40 2.70 0.094 0.106

E 10.0 10.4 0.394 0.409

L 13.1 13.6 0.516 0.535

c

L1 3.48 3.78 0.137 0.149
L2 1.27 1.40 0.050 0.055

Millimeters Inches

Min. Max. Min. Max.

PACKAGE MECHANICAL DATA

TO-220FPAB

H

Dia

L6

L2

L3

L5

D

L4

G1

G

F1

F2

F

REF. DIMENSIONS

Millimeters Inches

A

B

A 4.4 4.6 0.173 0.181

Min. Max. Min. Max.

B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067

L7

F2 1.15 1.70 0.045 0.067

G 4.95 5.20 0.195 0.205

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 Typ. 0.63Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417

E

L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366

Dia. 3.00 3.20 0.118 0.126

6/7

STPS10H100CT/CG/CR/CFP

PACKAGE MECHANICAL DATA

TO-220AB

H2

Dia

L5

L6

L2

F2
F1

F

G1

G

L9

L4

REF. DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A

C

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

L7

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066

G 4.95 5.15 0.194 0.202

D

G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409

L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116

M

E

L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102typ.

Diam. 3.75 3.85 0.147 0.151

■ Cooling method: C.

■

Recommended torque value: 0.55 m.N

■

Maximum torque value 0.70 m.N

Ordering type Marking Package Weight Base qty Delivery mode

STPS10H100CT STPS10H100CT TO-220AB 2.20g 50 Tube

STPS10H100CFP STPS10H100CFP TO-220FPAB 2.0 g 50 Tube

STPS10H100CG STPS10H100CG D

STPS10H100CG-TR STPS10H100CG D

STPS10H100CR STPS10H100CR I

■

Epoxy meets UL94,V0

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useof such information nor for any infringement of patents or other rights ofthird parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.

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2

PAK 1.48g 50 Tube

2

PAK 1.48g 1000 Tape and reel

2

PAK 1.49g 50 Tube

7/7

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