Page 1
®
MAIN PRODUCT CHARACTERISTICS
STPS1045D/F
POWER SCHO TTKY REC TIFIER
I
F(AV)
V
RRM
V
F
10 A
45 V
0.57 V
FEATURES AND BENE FITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSE S
EXTREMELY FAST SWITCHING
LOW FORWARD V O LTAGE DROP
INSULATED PACKAGE:ISO WATT220AC
Insulating voltage = 2000V DC
Capacitance = 12pF
DESCRIPTION
Single chip Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
This device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity protection applications.
K
TO-220AC
STPS1045D
A
A
K
ISOWATT220AC
STPS1045F
A
K
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitive peak reverse voltage 45 V
RMS forward current 30 A
Average forward current
δ
= 0.5
Surge non repetitive forward current tp = 10 ms
TO-220AC Tc = 150°C 10 A
ISOWATT220AC Tc = 145°C
180 A
Sinusoidal
I
RRM
Repetitive peak reverse current tp = 2 µs
1A
F = 1KHz
Tstg Storage temperature range - 65 to + 175
Tj Maximum junction temperature 175 ° C
dV/dt Critical rate of rise of reverse voltage 10000 V /µs
September 1999 - Ed: 3B
°
C
1/5
Page 2
STPS1045D/F
THERMAL RE SISTA NC ES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case TO-220AC 2.2
°
ISOWATT220AC 4.5
STATIC ELECTRICAL CHARACTER ISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
* Reverse leakage current Tj = 25°CV
I
R
= V
R
RRM
100
Tj = 125°C15mA
** Forward voltage drop Tj = 25°CI
V
F
Tj = 125°CI
Tj = 125°CI
Pulse test : * tp = 5 ms,δ < 2 %
** tp = 380 µs, δ< 2%
= 15 A 0.84 V
F
= 15 A 0.72
F
= 7.5 A 0.57
F
To evaluate the conduction losses use the following equation :
P = 0.42 x I
F(AV)
+ 0.015 I
F2(RMS)
C/W
µ
A
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
8
7
6
5
4
3
2
1
0
0123456789101112
δ = 0.05
δ = 0.1
IF(av) (A)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 2:
Average current versus ambient tempera-
ture (δ : 0.5).
IF(av)(A)
12
10
8
6
4
2
0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
TO220AC
ISOWATT220
2/5
Page 3
STPS1045D/F
Fig. 3-1:
Non repetitive surge peak forward current versus overload duration (maximum values)
(TO-220AC).
IM(A)
160
140
120
100
80
60
40
IM
20
0
1E-3 1E-2 1E-1 1E+0
Fig. 4-1:
t
δ
=0.5
t(s)
Relative variation of thermal transient im-
Tc=50°C
Tc=100°C
Tc=150°C
pedance junction to case versus pulse duration
(TO-220AC).
Zth(j-c)/Rth(j-c)
1.0
Fig. 3-2:
Non repetitive sur ge peak forward current versus overload duration (maximum values)
(ISOWATT220AC).
IM(A)
100
90
80
70
60
50
40
30
I
M
20
10
0
1E-3 1E-2 1E-1 1E+0
Fig. 4-2:
t
δ
=0.5
t(s)
Relative variation of thermal transient im-
Tc=50°C
Tc=100°C
Tc=150°C
pedance junction to case versus pulse duration
(ISOWATT220AC).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-4 1E-3 1E-2 1E-1 1E+0
Fig. 5:
Reverse leakage current versus reverse
tp(s)
δ
=tp/T
T
tp
voltage applied (typical values).
IR(µA)
1E+5
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
0 5 10 15 20 25 30 35 40 45
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0 1E+1
Fig. 6:
Junction capacitance versus r everse
tp(s)
δ
=tp/T
T
tp
voltage applied (typical values).
C(pF)
1000
500
200
VR(V)
100
12 51020 50
F=1MHz
Tj=25°C
3/5
Page 4
STPS1045D/F
Fig. 7:
Forward voltage drop versus forward cur-
rent (maximum values).
IFM(A)
100.0
Tj=125°C
(Typical values)
10.0
Tj=125°C
Tj=25°C
1.0
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
PACKAGE MEC HANICAL DA TA
TO-220AC
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
H2
L5
Ø I
L6
L2
L9
F1
L4
F
G
A
C
L7
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
D
G 4.95 5.15 0.194 0.202
H2 10.00 10.40 0.393 0.409
L2 16.40 typ. 0.645 typ.
M
E
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. I 3.75 3.85 0.147 0.151
4/5
Page 5
PACKAGE MECHANICAL DAT A
ISOWATT220AC
STPS1045D/F
H
A
B
REF.
Millimeters Inches
DIMENSIONS
Min. Typ. Max. Min. Typ. Max.
A 4.40 4. 60 0.173 0.181
Diam
L6
L2
L3
L7
B 2.50 2. 70 0.098 0.106
D 2.40 2.75 0.094 0.108
E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039
F1 1.15 1.70 0.045 0.067
F1
G 4.95 5.20 0.195 0.205
H 10.00 10.40 0.394 0.409
L2 16.00 0.630
L3 28.60 30.60 1.125 1.205
F
D E
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366
G
Diam 3.00 3.20 0.118 0.0126
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwi se un der any pat ent or patent rights of STMic roelec tronics. S pecifications ment ioned in t his publ ication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for us e as critical comp onents i n l i fe s upport devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroe lectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reser ved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
5/5
Loading...