Page 1
ST
ST
ST
STP
P
P
P943
9 43
943
9437
7
7
7
PChannelEnhancementModeMOSFET
-
5.7A
DESCRIPTION
FEATURE
FEATURE
FEATURE
FEATURE
-30V/-5.7A,R
DS(ON)
=45mΩ(Typ.)
@VGS=-10V
-30V/-5.0A,R
DS(ON)
=50mΩ
@VGS=-4.5V
-30V/-4.4A,R
DS(ON)
=65mΩ
@VGS=-2.5V
Superhighdensitycelldesignfor
extremelylowR
DS(ON)
Exceptionalon-resistanceandmaximumDC
currentcapability
SOP-8packagedesign
DESCRIPTION
DESCRIPTION
DESCRIPTION
STP9437istheP-Channellogicenhancementmodepowerfieldeffecttransistorwhich
isproducedusinghighcelldensity,DMOStrenchtechnology.Thishighdensity
processisespeciallytailoredtominimizeon-stateresistance.Thesedevicesare
particularlysuitedforlowvoltageapplication,notebookcomputerpowermanagement,
andotherbatterypoweredcircuitswherehigt-sideswitching.
PIN
C ONFIGURATION
PIN
CONFIGURATION
PIN
PINCONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
�
�
�
�
�
�
PART
PART
PART
PARTMARKING
SOP-8
SOP-8
SOP-8
SOP-8
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
M ARKING
MARKING
MARKING
Y:
Y:
Y:
Y:Year
A:
A:
A:
A:Date
Y ear
Year
YearCode
D ate
Date
DateCode
C ode
Code
Code
C ode
Code
Code
Copyright©2007,StansonCorp.
STP94372010.V1
Page 2
ST
ST
ST
STP
P
P
P943
9 43
943
9437
7
7
7
PChannelEnhancementModeMOSFET
-
5.7A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
Unit
Unit
Unit
Unit
Drain-SourceVoltage
VDSS
-30
V
Gate-SourceVoltage
VGSS
±12
V
ContinuousDrainCurrent(TJ=150
℃
)
TA=25℃
TA=70
℃
ID
-6.8
-4.6
A
PulsedDrainCurrent
IDM
-30
A
ContinuousSourceCurrent(DiodeConduction)
IS
-2.3
A
PowerDissipation
TA=25℃
TA=70
℃
PD
2.8
1.8
W
OperationJunctionTemperature
TJ
-55/150
℃
StorgaeTemperatureRange
TSTG
-55/150
℃
ThermalResistance-JunctiontoAmbient
RθJA
70
℃
/W
ABSOULTE
ABSOULTE
ABSOULTEMAXIMUM
M AXIMUM
MAXIMUM
MAXIMUMRATINGS
R ATINGS
RATINGS
RATINGS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STP94372010.V1
Page 3
ST
ST
ST
STP
P
P
P943
9 43
943
9437
7
7
7
PChannelEnhancementModeMOSFET
-
5.7A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Uni
Uni
Uni
Uni
t
t
t
t
Static
Static
Static
Static
Drain-Source
BreakdownVoltage
V
(BR)DSS
V
GS
=0V,ID=-250uA
-30
V
GateThreshold
Voltage
V
GS(th)
V
DS
=V
GS
,ID=-250uA
-0.4
-1.0
V
GateLeakageCurrent
I
GSSVDS
=0V,V
GS
=±20V
±100
nA
ZeroGateVoltage
DrainCurrent
I
DSS
V
DS
=-24V,V
GS
=0V
-1
uA
V
DS
=-24V,V
GS
=0V
TJ=85℃
-5
On-StateDrain
Current
I
D(on)VDS
=-5V,V
GS
=-4.5V
-10
A
Drain-sourceOnResistance
R
DS(on)
V
GS
=-10V,ID=-5.7A
V
GS
=-4.5V,ID=-5.0A
V
GS
=-2.5V,ID=-4.4A
0.035
0.040
0.050
0.045
0.050
0.065
Ω
Forward
Transconductance
gfs
V
DS
=-15V,ID=-5.7V
13
S
DiodeForwardVoltage
VSDIS=-2.3A,V
GS
=0V
-0.8
-1.2
V
Dynamic
Dynamic
Dynamic
Dynamic
TotalGateCharge
Q
g
V
DS
=-15V,V
GS
=-10V
I
D
≡
-3.5A
16
24
nC
Gate-SourceCharge
Qgs2.3
Gate-DrainCharge
Q
gd
4.5
InputCapacitance
C
iss
VDS==-15V,VGS=0V
f=1MHz
680
pF
OutputCapacitance
C
oss
120
Reverse
TransferCapacitance
C
rss
75
Turn-OnTime
t
d(on)
tr
V
DD
=-15V,RL=15Ω
ID=-1A,V
GEN
=-10V
RG=6Ω
14
25
nS
16
26
Turn-OffTime
t
d(off)
tf
42
70
30
50
ELECTRICAL
ELECTRICAL
ELECTRICALCHARACTERISTICS
C HARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STP94372010.V1
Page 4
ST
ST
ST
STP
P
P
P943
9 43
943
9437
7
7
7
PChannelEnhancementModeMOSFET
-
5.7A
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STP94372010.V1
Page 5
ST
ST
ST
STP
P
P
P943
9 43
943
9437
7
7
7
PChannelEnhancementModeMOSFET
-
5.7A
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STP94372010.V1
Page 6
ST
ST
ST
STP
P
P
P943
9 43
943
9437
7
7
7
PChannelEnhancementModeMOSFET
-
5.7A
PACKAGE
PACKAGE
PACKAGE
PACKAGEOUTLINE
O UTLINE
OUTLINE
OUTLINESOP-8P
S OP-8P
SOP-8P
SOP-8P
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STP94372010.V1
Page 7
Loading...