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ADVANCED DATA
June 2002
STGP7NB60KD STGB7NB60KD
STGP7NB60KDFP
N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK
PowerMESH™ IGBT
■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
■ LOW ON-VOLTAGE DROP (V
cesat
)
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ VERY HIGH FREQUENCY OPERATION
■ SHORT CIRCUIT RATED
■ CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH
™
IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control app lications with short circuit withstand capability.
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS AND PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
(n) Puls e width limited by s afe operating ar ea
TYPE V
CES
V
CE(sat)
I
C
STGP7NB60KD
STGP7NB60KDFP
STGB7NB60KD
600 V
600 V
600 V
< 2.8 V
< 2.8 V
< 2.8 V
7 A
7 A
7 A
Symbol Parameter Value Unit
STGP7NB60KD
STGB7NB60KD
STGP7NB60KDFP
V
CES
Collector-Emitter Voltage (VGS = 0)
600 V
V
ECR
Emitter-Collector Voltage 20 V
V
GE
Gate-Emitter Voltage ±20 V
I
C
Collector Current (continuos) at TC = 25°C
14 A
I
C
Collector Current (continuos) at TC = 125°C
7A
I
CM
(n)
Collector Current (pulsed) 56 A
P
TOT
Total Dissipation at TC = 25°C
80 35 W
Derating Factor 0.64 0.28 W/°C
V
ISO
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) -- 2500 V
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
TO-220
1
2
3
1
2
3
TO-220FP
1
3
D2PAK
INTERNAL SCHEMATIC DIAGRAM
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STGP7NB60KD/FP/STGB7NB 60K D
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THERMA L D ATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
SWITCHING ON
TO-220
D
2
PAK
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.56 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-h Thermal Resistance Case-heatsink Typ 0.5 °C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0 600 V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, TC = 25 °C 50 µA
VCE = Max Rating, TC = 125 °C 500 µA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= ±20V , VCE = 0 ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= VGE, IC = 250µA
57V
V
CE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 7 A
2.3 2.8 V
VGE = 15V, IC = 7 A, Tc =100°C
1.9 V
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
Forward Transconductance
V
CE
= 25 V , IC=7 A
5S
C
ies
Input Capacitance
V
CE
= 25V, f = 1 MHz, VGE = 0
560 pF
C
oes
Output Capacitance 68 pF
C
res
Reverse Transfer
Capacitance
15 pF
Q
g
Total Gate Charge
V
CE
= 480V, IC = 7 A,
VGE = 15V
42 nC
Q
ge
Gate-Emitter Charge 7.9 nC
Q
gc
Gate-Collector Charge 17.6 nC
tscw Short Circuit Withstand Time V
ce
= 0.5 V
BR(CES)
,
VGE = 15 V,
Tj = 125°C , RG = 10 Ω
10 µs
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
V
CC
= 480 V, IC = 7 A
RG=10Ω, VGE = 15 V
15 ns
t
r
Rise Time 48 ns
(di/dt)
on
Turn-on Current Slope VCC= 480 V, IC = 7 A RG=10Ω
VGE = 15 V,Tj = 125°C
160 A/µs
Eon Turn-on Switching Losses 70 µJ
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STGP7NB60KD/FP/STGB7NB60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
COLLECTOR-EMITTER DIODE
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.
2. Pulse width li mited by max. j unction temperature .
(**)Losses in clude Also th e T ai l (Jedec Standardization)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
c
Cross-over Time
V
cc
= 480 V, IC = 7 A,
R
GE
= 10 Ω , VGE = 15 V
85 ns
t
r(Voff
)
Off Voltage Rise Time 20 ns
td(
off
)
Delay Time 75 ns
t
f
Fall Time 70 ns
E
off
(**)
Turn-off Switching Loss 85
µJ
E
ts
Total Switching Loss 235
µJ
t
c
Cross-over Time
V
cc
= 480 V, IC = 7 A,
R
GE
= 10 Ω , VGE = 15 V
Tj = 125 °C
150 ns
t
r(Voff
)
Off Voltage Rise Time 50 ns
td(
off
)
Delay Time 110 ns
t
f
Fall Time 110 ns
E
off
(**)
Turn-off Switching Loss 220
µJ
E
ts
Total Switching Loss 405
µJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
f
I
fm
Forward Current
Forward Current pulsed
6
48
A
A
V
f
Forward On-Voltage If = 6 A
If = 6 A, Tj = 125 °C
1.8
1.4
2.2
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 6 A ,VR = 200 V,
Tj =125°C, di/dt = 100A/µs
100
135
2.7
ns
nC
A
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Fig. 2: Test Circuit For Inductive Load SwitchingFig. 1: Gate Charge test Circuit
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STGP7NB60KD/FP/STGB7NB60KD
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
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STGP7NB60KD/FP/STGB7NB 60K D
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L2
A
B
D
E
H
G
L6
F
L3
G1
123
F2
F1
L7
L4
L5
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
TO-220FP MECHANICAL DATA
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STGP7NB60KD/FP/STGB7NB60KD
1
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º8º
D
2
PAK MECHANICAL DATA
3
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STGP7NB60KD/FP/STGB7NB 60K D
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TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
D2PAK FOOT PRINT
* on sales type
DIM.
mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
DIM.
mm inch
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0 0 98 0.0137
W 23.7 24.3 0.933 0.956
TAPE MECHANICAL DATA
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STGP7NB60KD/FP/STGB7NB60KD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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