Datasheet STP7NB60FP, STP7NB60 Datasheet (SGS Thomson Microelectronics)

STP7NB60

STP7NB60FP

N - CHANNEL ENHANCEMENT MODE

PowerMESH MOSFET

TYPE V

STP7NB60
ST P7NB60FP

■ TYPICALR

■ EXTREMELY HIGHdv/dt CAPABILITY

■ 100%AVALANCHE TESTED

■ VERYLOW INTRINSICCAPACITANCES

■ GATECHARGE MINIMIZED

DS(on)

DSS

600 V
600 V

= 1.0 Ω

R

DS(on)

<1.2Ω
<1.2Ω

I

D

7.2 A

4.1 A

DESCRIPTION

Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switchingcharacteristics.

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ SWITCHMODE POWERSUPPLIES(SMPS)

■ DC-AC CONVERTERSFOR WELDING

EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symb o l Para met er Value Uni t

ST P7NB6 0 ST P7 NB60FP

V

V

V

I

DM

P

dv/dt(

V

T

(•) Pulsewidth limitedby safe operating area (1)ISD≤ 7A,di/dt ≤ 200 A/µs, VDD≤ V

March 1998

Drain-source Voltage (VGS= 0) 600 V

DS

Drain- gate Voltage (RGS=20kΩ)

DGR

Gate-source V olt age ± 30 V

GS

Drain Current (continuous) at Tc=25oC7.24.1A

I

D

Drain Current (continuous) at Tc=100oC4.52.6A

I

D

600 V

(•) Drain Current (pulsed ) 28.8 28.8 A

Total Dissipation at Tc=25oC 125 40 W

tot

Derat ing Fact or 1.0 0.32 W/

1) Peak D iode Recovery volt a ge slope 4.5 4.5 V/ns

Insulation Wit hstand Voltage (DC)  2000 V

ISO

Storage Tem perature -65 to 150

stg

Max. Operating Junction Temper at ure 150

T

j

,Tj≤T

(BR)DSS

JMAX

o

C

o

C

o

C

1/9

STP7NB60/FP

THERMAL DATA

TO-220 TO220- FP

R

thj-case

R

thj- amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symb o l Parameter Max Value Uni t

I

AR

E

Ther mal Resistance Junct ion-case Max 1.0 3.13
Ther mal Resistance Junct ion-ambi ent Max

Ther mal Resistance Case-s i nk Ty p
Maximum Lead T empera t ur e For Sol dering P urpose

l

Avalanche Current, Repetit i v e or Not-Repe t it iv e
(pulse widt h limit e d by T

Singl e Puls e A valanc he Energ y

AS

(starti ng T

=25oC, ID=IAR,VDD=50V)

j

max, δ <1%)

j

62.5

0.5

300

7.2 A

580 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

OFF

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

= 250 µAVGS=0

I

D

600 V

Break dow n V oltage

I

DSS

I

GSS

Zero Gat e Voltage
Drain Curr ent (V

GS

Gat e- bod y Leaka ge
Current (V

DS

=0)

=0)

=MaxRating

V

DS

V

= Max Rating Tc= 125oC

DS

= ± 30 V

V

GS

1

50

± 100 nA

ON (∗)

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

V

GS(th )

R

DS(on)

Gat e Thre shold V olt a ge
St at i c D rain-source On

V

DS=VGSID

=250µA

VGS= 10V ID= 3.6 A 1.0 1.2 Ω

345V

Resistance

I

D(on)

On St ate Drain Current VDS>I

D(on)xRDS(on)max

7.2 A

VGS=10V

DYNAMIC

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on ductanc e

C

C

C

Input Capacit an c e

iss

Out put Capacitanc e

oss

Reverse Transfer

rss

Capaci ta nc e

VDS>I

D(on)xRDS(on)maxID

=3.6A 4 5.3 S

VDS=25V f=1MHz VGS= 0 1250

165

16

1625

223

22

µA
µA

pF
pF
pF

2/9

STP7NB60/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

t

d(on)

Turn-on T ime

r

Rise Tim e

t

VDD=300V ID=3.6A

=4.7 Ω VGS=10V

R

G

18

8

(see test cir cuit, figure 3)

Q

Q

Q

Tot al Gate Char g e

g

Gate-Source Charge

gs

Gat e- Drain Charg e

gd

VDD=480V ID=7.2A VGS=10V 30

9.9

13.3

SWITCHINGOFF

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off-voltage Rise Time
Fall Time

f

Cross-over T im e

c

VDD=480V ID=7.2A

=4.7 Ω VGS=10V

R

G

(see test cir cuit, figure 5)

8
5

15

SOURCE DRAIN DIODE

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse widthlimited by safe operating area

Source-drain Current

(•)

Source-drain Current
(pulsed)

(∗) For ward O n Voltage ISD=7.2A VGS=0 1.6 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

= 7. 2 A di/dt = 100 A/µs

I

SD

=100V Tj=150oC

V

DD

(see test cir cuit, figure 5)

530

4.5
Charge
Reverse Recovery

17

Current

27
12

45 nC

12

8

23

7.2

28.8

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µC

A

SafeOperating Area forTO-220 Safe OperatingArea for TO-220FP

3/9

STP7NB60/FP

ThermalImpedance forTO-220

OutputCharacteristics

ThermalImpedance forTO-220FP

TransferCharacteristics

Transconductance

4/9

StaticDrain-sourceOn Resistance

STP7NB60/FP

Gate Chargevs Gate-sourceVoltage

Normalized Gate ThresholdVoltagevs
Temperature

CapacitanceVariations

Normalized On Resistancevs Temperature

Source-drainDiode ForwardCharacteristics

5/9

STP7NB60/FP

Fig. 1: Unclamped InductiveLoad TestCircuit

Fig. 3: SwitchingTimes Test Circuits For

ResistiveLoad

Fig. 2: UnclampedInductive Waveform

Fig. 4: Gate Chargetest Circuit

Fig.5: Test CircuitFor InductiveLoad Switching

And DiodeRecovery Times

6/9

TO-220 MECHANICAL DATA

STP7NB60/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

7/9

STP7NB60/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

8/9

STP7NB60/FP

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use ofsuch information nor for any infringement of patents or other rightsof third parties which may resultsfrom its use. No
license isgranted by implication or otherwise underany patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useas criticalcomponents in lifesupport devicesorsystems withoutexpress
written approval ofSGS-THOMSON Microelectonics.

 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved

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