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SemiWell Semiconductor
Bi-Directional Triode Thyristor
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
◆ High Commutation dv/dt
◆ Non-isolated Type
General Description
This device is suitable for AC switching application, phase
control application such as fan speed and temperature modulation control, lighting control and static switching relay.
T(RMS)
= 6 A )
Symbol
TO-220
1
STP6A60
2.T2
○
▼
▲
○
3.Gate
○
1.T1
2
3
Absolute Maximum Ratings ( T
= 25°C unless otherwise specified )
J
Symbol Parameter Condition Ratings Units
V
DRM
I
T(RMS)
I
TSM
2
I
P
GM
P
G(AV)
I
GM
V
GM
T
T
STG
J
Repetitive Peak Off-State Voltage 600 V
= 100 °C
R.M.S On-State Current
Surge On-State Current
t
2
I
t
Peak Gate Power Dissipation 3.0 W
Average Gate Power Dissipation 0.3 W
Peak Gate Current 2.0 A
Peak Gate Voltage 10 V
Operating Junction Temperature - 40 ~ 125 °C
Storage Temperature - 40 ~ 150 °C
Mass 2.0 g
T
C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
6.0 A
60/66 A
18
2
A
s
Aug, 2003. Rev. 3
1/5
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Page 2
STP6A60
Electrical Characteristics
Symbol Items Conditions
V
= V
I
DRM
V
TM
+
I
GT1
-
I
GT1
-
I
GT3
+
V
GT1
-
V
GT1
-
V
GT3
V
GD
(dv/dt)c
I
H
R
th(j-c)
Repetitive Peak Off-State
Current
Peak On-State Voltage
D
= 125 °C
T
J
= 8 A, Inst. Measurement
I
T
Ⅰ
Gate Trigger Current
Ⅱ ──
V
D
Ⅲ ──
Ⅰ
Gate Trigger Voltage
Ⅱ ──
V
D
Ⅲ ──
= 125 °C, VD = 1/2 V
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
T
J
T
= 125 °C, [di/dt]c = -3.0 A/ms,
J
V
D
Holding Current
Thermal Impedance Junction to case
, Single Phase, Half Wave
DRM
= 6 V, RL=10 Ω
= 6 V, RL=10 Ω
=2/3 V
DRM
DRM
Ratings
Min. Typ. Max.
──
─
─
──
──
0.2
5.0
─
──
──
10
──
1.0 mA
1.5 V
20
20
20
1.5
1.5
1.5
─
2.8 °C/W
Unit
mA
V
V
V/㎲
mA
2/5
Page 3
Fig 1. Gate Characteristics Fig 2. On-State Voltage
VGM (10V)
1
10
PGM (3W)
P
(0.3W)
25 ℃
0
10
G(AV)
Gate Voltage [V]
(2A)
GM
I
2
10
1
10
125 oC
On-State Current [A]
0
10
STP6A60
25 oC
-1
10
1
10
VGD (0.2V)
2
10
3
10
Gate Current [mA]
Fig 3. On State Current vs.
Maximum Power Dissipation
10
9
8
7
6
θ
5
4
3
Power Dissipation [W]
2
1
0
012345678
θ
π
π
2
θ
360°
: Conduction Angle
θ = 180
θ = 150
θ = 120
θ = 90
θ = 60
θ = 30
o
o
o
o
o
o
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
80
70
60
50
40
30
20
Surge On-State Current [A]
10
0
0
10
50Hz
60Hz
1
10
Time (cycles)
0.5 1.0 1.5 2.0 2.5 3.0 3.5
On-State Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
130
C]
o
120
o
θ = 30
110
θ
π
π
2
θ
100
Allowable Case Temperature [
90
012345678
360°
θ
: Conduction Angle
θ = 60
θ = 90
θ = 120
θ = 150
θ = 180
o
o
o
o
o
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
_
V
C)
C)
o
o
(t
2
10
(25
GT
V
V
0.1
GT3
1
+
GT
V
GT1
_
V
GT1
-50 0 50 100 150
Junction Temperat ure [ oC]
3/5
Page 4
STP6A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
10
C)
C)
o
o
1
(t
(25
GT
I
GT
I
0.1
-50 0 50 100 150
Junction Temperat ure [ oC]
_
I
GT3
Fig 9. Gate Trigger Characteristics Test Circuit
Fig 8. Transient Thermal Impedance
10
C/W]
o
+
I
GT1
_
I
GT1
1
Transient Thermal Impedance [
-2
10
-1
10
0
10
Time (sec)
1
10
2
10
4/5
10Ω
6V
▼
▲
10Ω
▼
●
A
R
V
●
G
6V
▲
●
A
V
●
R
10Ω
▼
▲
●
G
6V
A
V
●
Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ
R
G
Page 5
TO-220 Package Dimension
STP6A60
Dim.
Min. Typ. Max. Min. Typ. Max.
mm Inch
A 9.7 10.1 0.382 0.398
B 6.3 6.7 0.248 0.264
C 9.0 9.47 0.354 0.373
D 12.8 13.3 0.504 0.524
E 1.2 1.4 0.047 0.055
F 1.7 0.067
G 2.5 0.098
H 3.0 3.4 0.118 0.134
I 1.25 1.4 0.049 0.055
J 2.4 2.7 0.094 0.106
K 5.0 5.15 0.197 0.203
L 2.2 2.6 0.087 0.102
M 1.25 1.55 0.049 0.061
N 0.45 0.6 0.018 0.024
O 0.6 1.0 0.024 0.039
φ
3.6 0.142
I
E
B
F
C
G
D
A
H
L
1
2
3
φ
M
1. T1
2. T2
3. Gate
J
K
N
O
5/5
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