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N-CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP
STP60NF06
STP60NF06FP
STripFET™ POWER MOSFET
TYPE V
STP60NF06
STP60NF06FP
■ TYPICAL R
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
DS
DSS
60 V
60 V
(on) = 0.014Ω
R
DS(on)
< 0.016 Ω
< 0.016 Ω
I
D
60A
60A
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated D C-DC
converters for T el ecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
■ AUTOMOTIVE
3
2
TO-220
1
TO-220FP
1
INTERNAL SCHEMATIC DIAGRAM
3
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP60NF06 STP60NF06FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns
V
ISO
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(l)
Drain Current (pulsed) 240 148 A
Total Dissipation at TC = 25°C
60 37 A
42 26 A
110 42 W
Derating Factor 0.73 0.28 W/°C
Insulation Winthstand Voltage (DC) -- 2500 V
Storage Temperature
Max. Operating Junction Temperature
(1) ISD≤ 60A, di/ dt ≤ 400 A/µs, VDD≤ 24V, Tj≤ T
–65 to 175 °C
jMAX
1/9January 2002
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STP60NF06 - STP60NF06FP
THERMA L D ATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.36 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 30 V)
j
ID = 250 µA, VGS = 0 60 V
30 A
360 mJ
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 20V ±100 nA
GS
1µA
10 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
VGS = 10V, ID = 30 A
24V
0.014 0.016 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS =15V , ID= 30 A 20 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 360 pF
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, VGS = 0
DS
1810 pF
125 pF
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STP60NF06 - STP60NF06FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 108 ns
Total Gate Charge VDD = 48V, ID =60A,VGS = 10V 49
Gate-Source Charge 18 nC
Gate-Drain Charge 14 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
d(off)
t
t
f
t
f
c
Turn-off-Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 60 A
(2)
Source-drain Current (pulsed) 240 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 30 V, ID = 30 A
DD
R
= 4.7Ω VGS = 10V
G
(see test circuit, Figure 3)
VDD = 30 V, ID = 30 A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 3)
Vclamp =48V, I
RG=4.7Ω, V
D
GS
= 60 A
= 10V
(see test circuit, Figure 3)
ISD = 60 A, VGS = 0
= 60 A, di/dt = 100A/µs,
I
SD
VDD = 25V, Tj = 150°C
(see test circuit, Figure 5)
16 ns
66
43
20
40
12
21
1.3 V
73
182
5
nC
ns
ns
ns
ns
ns
ns
nC
A
Safe Operating Area for TO-220FPSafe Operating Area for TO-220
3/9
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STP60NF06 - STP60NF06FP
Thermal Impedence for TO-220 Thermal Impedence for TO-220FP
Output Characteristics
Transconductance Static Drain-source On Resistance
Transfer Characteristics
4/9
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STP60NF06 - STP60NF06FP
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forw ard Ch aracteristi cs
Normalized On Resistance vs Temperatur e
5/9
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STP60NF06 - STP60NF06FP
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/9
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E
TO-220 MECHANICAL DATA
STP60NF06 - STP60NF06FP
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A
C
D
L5
Dia.
L7
D1
L6
L2
L9
F1
G1
F
H2
G
F2
L4
P011C
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STP60NF06 - STP60NF06FP
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
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L3
L6
L7
F1
F
G1
H
F2
123
L4
L2
L5
G
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STP60NF06 - STP60NF06FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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