Page 1
STP5NA80
STP5NA80FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
STP5NA80
STP5NA80FI
■ TYPICAL R
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
DS(on)
DSS
800 V
800 V
= 1.8 Ω
R
DS(on)
< 2.4 Ω
< 2.4 Ω
I
D
4.7 A
2.8 A
o
C
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R
and gate charge, unequalled
DS(on)
ruggedness and superior switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP5NA80 STP5NA80FI
V
V
V
I
DM
P
V
T
(•) Pulse width limited by safe operating area
November 1996
Drain-source Voltage (VGS = 0) 800 V
DS
Drai n -ga te V ol t ag e ( RGS = 20 kΩ)800V
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC4.72.8A
D
I
Drain Current (continuous) at Tc = 100 oC3 1.8A
D
(•) Drain Current (pulsed) 19 19 A
Total Dissipation at Tc = 25 oC12545W
tot
Derating Factor 1 0.36 W/
Insulation Withstand Voltage (DC) 2000 V
ISO
Stor age Tempe rat ure -65 to 15 0
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
o
C
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STP5NA80/FI
THERMAL DATA
TO-220 ISOWATT220
R
thj-case
R
thj-amb
R
th c-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
E
I
AR
Thermal Resistance Junction-case Max 1 2.78
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Max im u m Le ad T em perature F or So l de rin g P ur p ose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Sing le Pul se Ava lan che Energy
AS
(starting Tj = 25 oC, ID = IAR, V
Repet iti ve Av alan che En erg y
AR
DD
= 50 V)
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
62.5
0.5
300
4.7 A
110 mJ
4.5 mJ
3A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. U nit
V
(BR) DSS
Drain-source
ID = 250 µA V
= 0 800 V
GS
Bre akdow n Vol tage
I
DSS
I
GSS
Zero Ga te V ol t ag e
Drain Current (V
GS
Gate -body Leaka ge
VDS = Max Rating
= 0)
VDS = Max Rating x 0.8 Tc = 125 oC
VGS = ± 30 V ± 10 0 nA
25
250
Current (VDS = 0)
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. U nit
V
R
GS(th)
DS(on)
Gate Threshold Voltage V
Stat ic Dra in-s ourc e On
= VGS ID = 250 µA 2.25 3 3.75 V
DS
VGS = 10V ID = 2.5 A 1.8 2.4 Ω
Resistance
I
D(on)
On State Dra in C urr e nt VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
4.7 A
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. U nit
g
(∗)Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 2.5 A 2 .7 5.2 S
= 0 1250
GS
140
35
1700
190
50
µA
µA
pF
pF
pF
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STP5NA80/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condition s Min. Typ. Max. U nit
t
d(on)
(di/dt)
Q
Q
Q
SWITCHING OFF
Symbol Parameter Test Condition s Min. Typ. Max. U nit
t
r(Voff)
t
SOURCE DRAIN DIODE
Turn-on Time
t
Rise Time
r
Turn-on Current Slope V
on
Tot al G a te C ha r ge
g
Gate -Sou rce Ch arge
gs
Gate-Drain Charge
gd
Off-voltage Rise Time
t
Fall Time
f
Cross-over Time
c
V
= 400 V ID = 2.5 A
DD
RG = 47 Ω VGS = 10 V
(see test circuit, figure 3)
= 640 V ID = 5 A
DD
RG = 47 Ω VGS = 10 V
(see te s t ci r cui t, fi g ure 5 )
VDD = 640 V ID = 5 A V
V
= 640 V ID = 5 A
DD
RG = 47 Ω VGS = 10 V
(see test circuit, figure 5)
= 10 V 55
GS
40
10055135
180 A/µs
75 nC
8
24
75
25
110
100
35
150
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condition s Min. Typ. Max. U nit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
4.7
19
(pulsed)
V
(∗) F or w ar d On V ol t ag e ISD = 4.7 A VGS = 0 1.6 V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 5 A di/dt = 100 A/µ s
SD
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
800
15.2
Charge
I
RRM
Reverse Recovery
38
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
A
A
ns
µC
A
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STP5NA80/FI
Thermal Impedeance For TO-220
Derating Curve For TO-220
Thermal Impedance For ISOWATT220
Derating Curve For ISOWATT220
Output Characteristics
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Transfer Characteristics
Page 5
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
STP5NA80/FI
Temperature
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
5/10
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STP5NA80/FI
Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Accidental Overload Area Source-drain Diode Forward Characteristics
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STP5NA80/FI
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveforms
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
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E
STP5NA80/FI
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
8/10
A
C
D
D1
L2
F1
L5
Dia.
G1
F
F2
L9
G
H2
L7
L6
L4
P011C
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ISOWATT220 MECHANICAL DATA
STP5NA80/FI
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
A
B
H
Ø
L6
L7
L2
L3
D
F1
F2
F
123
L4
E
G1
G
P011G
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STP5NA80/FI
Information f urnished is believed t o be accurate and reliabl e. However, SGS-T HOMSON Micro electronics a ssumes no re sponsability for the
cons eq ue nce s o f u se o f s uc h i n fo rma ti o n nor f or a ny infrin ge me nt of pa te nt s or o th er r i gh ts o f t hir d pa rti e s w hic h ma y results fro m i t s us e. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as crit ical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserv ed
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Ita ly - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
.
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