Datasheet STP5N30FI, STP5N30 Datasheet (SGS Thomson Microelectronics)

STP5N30

STP5N30FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

STP 5N30
STP 5N30FI

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ APPLICATION ORIENTED

DS(on)

DSS

300 V
300 V

= 1.2 Ω

R

DS(on)

I

D

<1.4Ω
<1.4Ω5A3.5 A

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH SPEED SWITCHING

■ SWITCH MODE POWERSUPPLIES (SMPS)

■ CHOPPER REGULATORS, CONVERTERS,

MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT

■ PARTICULARLY SUITABLE FOR

ELECTRONIC FLUORESCENT LAMP
BALLASTS

3

2

1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

STP5N30 STP5N30FI

V

V

V

I

DM

P

V

T

(•) Pulsewidth limited bysafe operating area

December 1996

Drain - s ource Voltage (VGS=0) 300 V

DS

Drain- gate Voltage (RGS=20kΩ)300V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC53.5A

I

D

Drain Current (continuous) at Tc=100oC3.2 2.2A

I

D

(•) Drain Current (pulsed) 20 20 A

Total Di ssipation a t Tc=25oC7535W

tot

Derat ing Factor 0.6 0.28 W/
Ins ulation Withs t and Voltage (DC)  2000 V

ISO

St or a ge Tem perature -65 t o 150

stg

Max. Operating Jun ction T emperature 150

T

j

o
o

o

C

C
C

1/10

STP5N30/FI

THERMAL DATA

TO-220 ISOW ATT 220

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e M ax 1.67 3.57
Thermal Resistance Junction- ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead Temperature For So ldering Purpose

l

Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng T
Repetitive Avalanc he Energ y

AR

=25oC, ID=IAR,VDD=50V)

j

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive

(Tc= 100oC, pulse width l imited by Tjmax, δ <1%)

62.5

0.5

300

5A

50 mJ

1.5 mJ

3.2 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

OFF

Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS= 0 300 V

Break d own Volta ge

I

DSS

I

GSS

Zer o G at e V oltage
Drain Current (VGS=0)

Gat e- body Leakage
Current (V

DS

=0)

VDS=MaxRating
VDS= Max Rating x 0.8 Tc=125oC

= ± 20 V ± 10 0 nA

V

GS

10

100

ON (∗)

Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n

VGS=10V ID= 2.5 A 1.2 1.4 Ω

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

5A

VGS=10V

DYNAMIC

Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=2.5A 2 3.1 S

VDS=25V f=1MHz VGS=0 500

80
16

700
110

25

µA
µA

pF
pF
pF

2/10

STP5N30/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on T ime

t

Rise Time

r

Turn-on Current S lope VDD=240V ID=5A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Co ndi tions Mi n. Ty p. Max. Unit

t

r(Voff)

t

Off -voltage Rise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAINDIODE

VDD=150V ID=2.5A
RG=50 Ω VGS=10V

45
30

(see test circuit, figure 3)

330 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)

VDD= 240 V ID=5A VGS=10V 20

6
8

VDD=240V ID=5A
RG=50 Ω VGS=10V
(see test circuit, figure 5)

35
20
60

60
40

30 nC

50
30
80

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Co ndi tions Mi n. Ty p. Max. Unit

I

I

SDM

SD

Source-drain C urrent

(•)

Source-drain C urrent

5

20

(pulsed)

V

(∗) Forward On Voltage ISD=5A VGS=0 1.6 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD=5A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)

300

1.7

Charge

I

RRM

Reverse Recovery

13

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220

A
A

ns

µC

A

3/10

STP5N30/FI

Thermal ImpedeanceFor TO-220

Derating Curve For TO-220

Thermal ImpedanceFor ISOWATT220

Derating Curve For ISOWATT220

Output Characteristics

4/10

Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

STP5N30/FI

Temperature

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs

5/10

STP5N30/FI

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode ForwardCharacteristics

6/10

STP5N30/FI

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 2: Unclamped Inductive Waveforms

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

7/10

STP5N30/FI

TO-220 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

8/10

ISOWATT220 MECHANICAL DATA

STP5N30/FI

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.4 0.7 0.015 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

Ø

F1

F

G1

H

G

F2

123

L2

L4

P011G

9/10

STP5N30/FI

Information furnished is believed to be accurate and reliable. However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or otherrights of third parties which may results from its use.No
licenseis granted by implication or otherwise under any patentor patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subject to change withoutnotice. Thispublication supersedes andreplacesall information previously supplied.
SGS-THOMSONMicroelectronics products are not authorized for use ascritical components in lifesupport devices orsystemswithout express
writtenapproval ofSGS-THOMSONMicroelectonics.

 1996 SGS-THOMSON Microelectronics -Printed in Italy- AllRightsReserved

Australia- Brazil - Canada -China - France- Germany - HongKong- Italy -Japan- Korea-Malaysia - Malta- Morocco- TheNetherlands -

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