Datasheet STP55NE06L Datasheet (SGS Thomson Microelectronics)

STP55NE06L

STP55NE06LFP

N - CHANNEL ENHANCEMENT MODE

” SINGLE FEATURE SIZE ” POWER MOSFET

TYPE V

STP 55NE06L
STP 55NE06LFP

■ TYPICALR

■ EXCEPTIONALdV/dtCAPABILTY

■ 100%AVALANCHE TESTED

■ LOW GATECHARGE100

■ HIGHdV/dt CAPABILITY

■ APPLICATIONORIENTED

DS(on)

DSS

60 V
60 V

= 0.018Ω

R

DS(on)

<0.022Ω
<0.022Ω

o

C

I

D

55 A
28 A

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
process whereby a single body is implantedon a
strip layout structure. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark­able manufacturingreproducibility.

APPLICATIONS

■ DC MOTORCONTROL

■ DC-DC& DC-AC CONVERTERS

■ SYNCHRONOUS RECTIFICATION

3

2

1

TO-220 TO220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

ST P55NE06L ST P55NE06LFP

V

V

V

I

DM

P

V

dV/ dt Peak Diod e Rec overy vo lt a ge slope 7 V /ns

T

(•) Pulse width limitedby safe operating area (1)ISD≤ 55 A,di/dt ≤ 300 A/µs,VDD≤ V

December 1997

Drain-source Voltage (VGS=0) 60 V

DS

Drain- gate Voltage (RGS=20kΩ)

DGR

Gate-source Volt age ± 15 V

GS

I

Drain Current (continuous) at Tc=25oC5528A

D

I

Drain Current (continuous) at Tc=100oC3920A

D

60 V

(•) Drain Cur rent (pul sed ) 220 220 A

Total Dissipation at Tc=25oC 130 35 W

tot

Derat ing Fa c t or 0.86 0.23 W/
Insulation Withstand Voltage (DC)  2000 V

ISO

Sto rage Tem perat ure -65 to 175

stg

T

Max. O per ating Junc tion Tem pe r at ure 175

j

(BR)DSS,Tj≤TJMAX

o

C

o

C

o

C

1/6

STP55NE06LFP

THERMAL DATA

TO - 2 20 TO - 220FP

R

thj-case

R

thj- amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symb o l Para met er Max Val ue Uni t

I

AR

E

Ther mal Resistance Junctio n- case Max 1.15 4.28
Ther mal Resistance Junctio n- ambient Max

Ther mal Resistance Case-si nk Ty p
Maximum Lead Tem perature For Soldering Purpos e

l

Avalanche Curre nt , Rep et it i v e or Not-Repe t it ive
(pulse width lim it ed by T

Singl e Pulse Avalanc he E nergy

AS

(starti ng T

=25oC, ID=IAR,VDD=25V)

j

max, δ <1%)

j

62.5

0.5

300

55 A

250 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

OFF

Symbol Parameter Test Cond itions Min. Typ . Max. Unit

V

(BR)DSS

Drain-source

= 250 µAVGS=0

I

D

60 V

Break dow n Voltage

I

DSS

I

GSS

Zero Gat e Voltage
Drain Current (V

GS

Gat e- bod y Le ak a ge
Current (V

DS

=0)

=0)

=MaxRating

V

DS

V

= Max Rating Tc=125

DS

o

C

= ± 15 V

V

GS

1

10

± 100 nA

ON (∗)

Symbol Parameter Test Cond itions Min. Typ . Max. Unit

V

GS(th )

R

DS(on)

I

D(on)

Gat e Thr e s hold Voltage
St at i c Drain -s ource O n

Resistance

V

DS=VGSID

VGS=5V ID=27.5A

=10V ID=27.5A

V

GS

On State Drain Current VDS>I

=250µA

D(on)xRDS(on)max

11.72.5V

0.022

0.019

0.028

0.022

55 A

VGS=10V

DYNAMIC

Symbol Parameter Test Cond itions Min. Typ . Max. Unit

g

(∗)Forward

fs

Tr ansc on ductance

C

C

C

Input Capacitan c e

iss

Out put Capacit ance

oss

Reverse Tr ansfer

rss

Capaci ta nc e

VDS>I

D(on)xRDS(on)maxID

=27.5 A 20 30 S

VDS=25V f=1MHz VGS= 0 2800

375
100

3750

500
140

µA
µA

Ω

pF
pF
pF

2/6

STP55NE06LFP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test Cond itions Min. Typ . Max. Unit

t

d(on)

Q

Q

Q

t

Turn-on Time
Rise T i m e

r

Tot al Gat e Charg e

g

Gate-Source Charge

gs

Gat e- Drain C harg e

gd

VDD=30V ID=27.5A

=4.7Ω VGS=5V

R

G

VDD=48V ID=55A VGS=5V 40

SWITCHINGOFF

Symbol Parameter Test Cond itions Min. Typ . Max. Unit

t

r(Voff)

t

Off-voltage Rise Time

t

Fall Time

f

Cross-over Tim e

c

VDD=48V ID=55A

=4.7 Ω VGS=5V

R

G

SOURCE DRAIN DIODE

Symbol Parameter Test Cond itions Min. Typ . Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse widthlimited by safe operating area

Source-drain Current

(•)

Source-drain Current
(pulsed)

(∗) For ward On Volt age ISD=55A VGS=0 1.5 V

Reverse Recov ery

rr

Time
Reverse Recov ery

rr

= 55 A di/dt = 100 A/µs

I

SD

=30V Tj= 150oC

V

DD

Charge
Reverse Recov ery
Current

40

10055140

55 nC
13
20

25
40
65

35

55

90

55

220

65

180

5.5

ns
ns

nC
nC

ns
ns
ns

A
A

ns

nC

A

3/6

STP55NE06LFP

TO-220 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

4/6

TO-220FP MECHANICAL DATA

STP55NE06LFP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

5/6

STP55NE06LFP

Information furnished is believed tobe accurate and reliable. However,SGS-THOMSONMicroelectronics assumesno responsability for the
consequencesof use ofsuch informationnor for any infringement of patents or otherrights of third parties which may resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent or patent rights of SGS-THOMSONMicroelectronics.Specificationsmentioned
in this publicationare subjectto change withoutnotice. This publication supersedes andreplaces all informationpreviouslysupplied.
SGS-THOMSONMicroelectronics productsarenotauthorizedfor useascriticalcomponents in life supportdevices or systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.

 1997 SGS-THOMSONMicroelectronics- Printedin Italy- All Rights Reserved

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