Datasheet STP50N06FI, STP50N06 Datasheet (SGS Thomson Microelectronics)

STP50N06

STP50N06FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

■ TYPICAL R

DS(on)

= 0.022 Ω

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

o

C

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ 175

o

C OPERATING TEMPERATURE

■ APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

TO-220 ISOWATT220

July 1993

TYPE V

DSS

R

DS(on)

I

D

STP 50N06
STP 50N06FI

60 V
60 V

< 0. 028 Ω
< 0. 028 Ω

50 A
27 A

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Unit

STP 50N06 STP5 0N06FI

V

DS

Drain - source Voltage (VGS=0) 60 V

V

DGR

Drain- gate Voltage (RGS=20kΩ)60V

V

GS

Gate-source Voltage ± 20 V

I

D

Drain Current (continuous) at Tc=25oC5027A

I

D

Drain Current (continuous) at Tc=100oC35 19A

I

DM

(•) Drain Current (pulsed) 200 200 A

P

tot

Total D i ssipation at Tc=25oC 150 45 W
Derating Factor 1 0.3 W/

o

C

V

ISO

Ins ulation Withs t and Voltage (DC)  20 00 V

T

stg

St orage Temperature -65 to 175

o

C

T

j

Max. Operating Junctio n Temperatur e 175

o

C

(•) Pulsewidth limited by safe operating area

1

2

3

1

2

3

1/10

THERMAL DATA

TO-220 ISOW ATT 220

R

thj-case

Thermal Resistance Junction -c as e M ax 1 3.33

o

C/W

R

thj-amb

R

thc-sink

T

l

Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purpos e

62.5

0.5

300

o

C/W

o

C/W

o

C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

Avalanc h e Cu rr ent , Repet itive or Not-R epetitiv e
(pulse width limited by Tjmax, δ <1%)

50 A

E

AS

Single Pul se Avalanche Ener gy
(starti ng T

j

=25oC, ID=IAR,VDD=25V)

400 mJ

E

AR

Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)

100 mJ

I

AR

Avalanc h e Cu rr ent , Repet itive or Not-R epetitiv e
(Tc= 100oC, pulse wid th limited by Tjmax, δ <1%)

35 A

ELECTRICAL CHARACTERISTICS (T

case

=25oC unless otherwise specified)

OFF

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - source
Break d own Voltage

ID=250µAVGS=0 60 V

I

DSS

Zer o Gate Voltage
Drain Current (VGS=0)

VDS=MaxRating
VDS= Max R ating x 0.8 Tc=125oC

250

1000µAµA

I

GSS

Gat e- body Leakage
Current (V

DS

=0)

V

GS

= ± 20 V ± 100 nA

ON (∗)

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

GS(th)

Gate Threshold Voltage VDS=VGSID=250µA22.94V

R

DS(on)

St at ic Drain-s ourc e O n
Resistance

VGS=10V ID=25A
VGS=10V ID=25A Tc= 100oC

0.022 0.028

0.056ΩΩ

I

D(on)

On St ate Dra in Current VDS>I

D(on)xRDS(on)max

VGS=10V

50 A

DYNAMIC

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

g

fs

(∗)Forward

Tr ansconduct anc e

VDS>I

D(on)xRDS(on)maxID

=25A 17 22 S

C

iss

C

oss

C

rss

Input Capacitance
Out put Capacitance
Reverse Transfer
Capaci tance

VDS=25V f=1MHz VGS= 0 1700

630
200

2200

850
260

pF
pF
pF

STP50N06/FI

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time
Rise Time

VDD=25V ID=25A
RG=4.7 Ω VGS=10V
(see test circuit, figure 3)

50

11070160

ns
ns

(di/dt)

on

Turn-on C urrent Slope VDD=40V ID=50A

RG=4.7 Ω VGS=10V
(see test circuit, figure 5)

460 A/µs

Q

g

Q

gs

Q

gd

Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge

VDD=40V ID=50A VGS=10V 50

14
25

70 nC

nC
nC

SWITCHING OFF

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off -voltage R ise Time
Fall Time
Cross-over Time

VDD=40V ID=50A
RG=4.7 Ω VGS=10V
(see test circuit, figure 5)

55
50

110

80
70

160

ns
ns
ns

SOURCE DRAIN DIODE

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

I

SD

I

SDM

(•)

Source-drain Current
Source-drain Current
(pulsed)

50

200

A
A

V

SD

(∗) Forward On Voltage ISD=50A VGS=0 2 V

t

rr

Q

rr

I

RRM

Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current

ISD= 50 A di/dt = 100 A/µs
VDD=30V Tj=150oC
(see test circuit, figure 5)

150

0.45
6

ns

µC

A

(∗) Pulsed: Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220

STP50N06/FI

3/10

Thermal Impedeance For TO-220

Derating Curve For TO-220

Output Characteristics

Thermal Impedance For ISOWATT220

Derating Curve For ISOWATT220

Transfer Characteristics

STP50N06/FI

4/10

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs

Temperature

STP50N06/FI

5/10

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode Forward Characteristics

STP50N06/FI

6/10

Fig. 2: Unclamped Inductive Waveforms

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

Fig. 1: Unclamped Inductive Load Test Circuits

STP50N06/FI

7/10

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

L6

A

C

D

E

D1

F

G

L7

L2

Dia.

F1

L5

L4

H2

L9

F2

G1

TO-220 MECHANICAL DATA

P011C

STP50N06/FI

8/10

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.4 0.7 0.015 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

L2

A

B

D

E

H

G

L6

Ø

F

L3

G1

123

F2

F1

L7

L4

ISOWATT220 MECHANICAL DATA

P011G

STP50N06/FI

9/10

Information furnished isbelieved to be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes noresponsability for the
consequences of use of suchinformation nor for any infringementof patents orother rights of third parties whichmay results from its use. No
license isgrantedby implicationor otherwiseunder anypatentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subjectto change without notice.This publication supersedes and replacesall information previouslysupplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useascriticalcomponents inlifesupportdevices orsystemswithout express
written approvalof SGS-THOMSON Microelectonics.

 1994 SGS-THOMSONMicroelectronics - All Rights Reserved

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STP50N06/FI

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