Page 1
STP
STP
STP
STP 4403
4403
4403
4403
P Channel Enhancement Mode MOSFET
-
10.0 A
DESCRIPTION
FEATURE
FEATURE
FEATURE
FEATURE
- 20 V/- 10.0 A, R
DS(ON)
= 20 m Ω
@V GS = - 4.5 V
- 20 V/- 8.6 A, R
DS(ON)
= 25 m Ω
@V GS = - 2.5 V
- 20 V/- 7.6 A, R
DS(ON)
= 35 m Ω
@V GS = - 1.8 V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum DC
current capability
SOP-8 package design
DESCRIPTION
DESCRIPTION
DESCRIPTION
ST P4403 is the P-Channel logic enhancement mode power field effect transistor s are
produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application , such as cellular phone and notebook computer
power management and other battery powered circuits , and low in-line power loss are
needed in a very small outline surface mount package.
PIN
CONFIGURATION
PIN
CONFIGURATION
PIN
PIN CONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
�
�
�
�
�
�
PART
PART
PART
PART MARKING
SOP-8
SOP-8
SOP-8
SOP-8
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
MARKING
MARKING
MARKING
Y:Year
Y:Year
Y:Year
Y:Year Code
A:Process
A:Process
A:Process
A:Process Code
Code
Code
Code
Code
Code
Code
Copyright © 2007, Stanson Corp.
STP 4403 20 1 0. V1
Page 2
STP
STP
STP
STP 4403
4403
4403
4403
P Channel Enhancement Mode MOSFET
-
10.0 A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
Unit
Unit
Unit
Unit
Drain-Source Voltage
VDSS
- 20
V
Gate-Source Voltage
VGSS
± 12
V
Continuous Drain Current (TJ=150
℃
)
TA=25 ℃
TA=70
℃
ID
- 10.0
- 8.0
A
Pulsed Drain Current
IDM
-30
A
Continuous Source Current (Diode Conduction)
IS
-2.3
A
Power Dissipation
TA=25 ℃
TA=70
℃
PD
2 .8
1 .8
W
Operation Junction Temperature
TJ
-55/ 150
℃
Storgae Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
R θ JA
70
℃
/W
ABSOULTE
ABSOULTE
ABSOULTE MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
RATINGS
RATINGS
RATINGS (Ta = 25
℃
Unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP 4403 20 1 0. V1
Page 3
STP
STP
STP
STP 4403
4403
4403
4403
P Channel Enhancement Mode MOSFET
-
10.0 A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-Source
Breakdown Voltage
V
(BR)DSS
V
GS
=0V,ID=-250uA
- 20
V
Gate Threshold
Voltage
V
GS(th)
V
DS
=V
GS
,ID=- 2 50uA
-0.35
- 0.9
V
Gate Leakage Current
I
GSSVDS
=0V,V
GS
= ± 12 V
± 10
0
nA
Zero Gate Voltage
Drain Current
I
DSS
V
DS
=- 16 V,V
GS
=0V
-1
uA
V
DS
=- 20 V,V
GS
=0V
TJ= 5 5 ℃
- 10
On-State Drain
Current
I
D(on)VDS
= -5V,V
GS
=-4.5V
- 20
A
Drain-source OnResistance
R
DS(on)
V
GS
=- 4.5 V,ID= - 10 A
V
GS
=- 2.5 V,ID=- 8.6 A
V
GS
=- 1.8 V,ID=- 7.6 A
16
20
28
20
2535m Ω
Forward
Transconductance
gfs
V
DS
=- 5.0 V,ID=- 10A
36
S
Diode Forward Voltage
VSDIS=-2. 5 A,V
GS
=0V
- 0.8
-1.2
V
Dynamic
Dynamic
Dynamic
Dynamic
Total Gate Charge
Q
g
V
DS
=-1 0 V,V
GS
=- 5 V
I
D
≡
- 10.0 A
30
45
nC
Gate-Source Charge
Qgs4.5
Gate-Drain Charge
Q
gd
8.0
Input Capacitance
C
iss
V DS ==-1 0 V,VGS=0V
f=1MHz
2670
pF
Output Capacitance
C
oss
520
Reverse
Transfer C apacitance
C
rss
480
Turn-On Time
t
d(on)
tr
V
DD
=-1 0 V,RL=15 Ω
ID=-1A,V
GEN
=- 4.5 V
RG=6 Ω
25
40
nS
45
70
Turn-Off Time
t
d(off)
tf
145
240
70
115
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25
℃
Unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP 4403 20 1 0. V1
Page 4
STP
STP
STP
STP 4403
4403
4403
4403
P Channel Enhancement Mode MOSFET
-
10.0 A
TYPICAL
TYPICAL
TYPICAL
TYPICAL CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP 4403 20 1 0. V1
Page 5
STP
STP
STP
STP 4403
4403
4403
4403
P Channel Enhancement Mode MOSFET
-
10.0 A
TYPICAL
TYPICAL
TYPICAL
TYPICAL CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP 4403 20 1 0. V1
Page 6
STP
STP
STP
STP 4403
4403
4403
4403
P Channel Enhancement Mode MOSFET
-
10.0 A
PACKAGE
PACKAGE
PACKAGE
PACKAGE OUTLINE
OUTLINE
OUTLINE
OUTLINE SOP-8P
SOP-8P
SOP-8P
SOP-8P
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP 4403 20 1 0. V1
Page 7
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