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STP40NF10
STD40NF10 - STB40NF10
N-CHANNEL 100V - 0.024Ω - 50A TO-220/DPAK/D2PAK
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE V
STP40NF10
STD40NF10
STB40NF10
■ TYPICAL R
■ EXCEPTIONAL dv/dtCAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
DS
DSS
100 V
100 V
100 V
(on) = 0.024Ω
R
DS(on)
< 0.028 Ω
< 0.028 Ω
< 0.028 Ω
I
D
50 A
50 A
50 A
CHARACTERIZATION
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This Power MOSFET series realized with STMicroelectronics uniqueSTripFET processhas specifically be en designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Compute r application. It
is also intended for any application wi th low gate
charge drive requirements.
3
1
DPAK
TO-220
3
2
1
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ HIGH-CURRENT SWITCHING APPLICATIONS
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP40NF10 P40NF10 TO-220 TUBE
STD40NF10T4 D40NF10 DPAK TAPE & REEL
STB40NF10T4 B40NF10 D²PAK TAPE & REEL
1/13October 2003
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STP40NF10 - STD40NF10 - STB40NF10
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
TO-220 - D²PAK DPAK
V
DS
V
DGR
V
GS
I
(*) Drain Current (continuous) at TC= 25°C
D
I
D
IDM()
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 20 35 V/ns
E
AS
T
stg
T
j
() Pulsewidthlimitedbysafeoperatingarea
(*) Limited by Package
(1) I
≤ 50A,di/dt≤ 600 A/µs, VDD≤ V
SD
(2) Starting Tj= 25°C, ID=50A,VDD=25V
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
100 V
100 V
Gate- source Voltage ± 20 V
50 A
Drain Current (continuous) at TC= 100°C
35 A
Drain Current (pulsed) 200 A
Total Dissipation at TC= 25°C
150 125 W
Derating Factor 1 0.83 W/°C
(2)
Single Pulse Avalanche Energy 150 135 mJ
Storage Temperature
Operating Junction Temperature
(BR)DSS,Tj≤TJMAX.
–55to175 °C
THERMAL DATA
TO-220 - D²PAK DPAK
Rthj-case Thermal Resistance Junction-case Max 1 1.2 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
ELECTRICAL CHARACTERISTICS (T
/
OFF
ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th
R
DS(on)
Maximum Lead Temperature For Soldering Purpose 300 °C
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
Drain-source
ID= 250 µA, VGS= 0 100 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage VDS=VGS,ID= 250 µA
Static Drain-source On
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ± 20V ±100 nA
GS
2 2.8
1µA
10 µA
4V
VGS=10V,ID= 25 A 0.024 0.028 Ω
Resistance
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STP40NF10 - STD 40N F10 - STB40NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=25V,ID=25A 20 S
g
fs
V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 265 pF
Reverse Transfer
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 63 ns
Total Gate Charge VDD= 80V, ID=50A,VGS= 10V 60.6
Gate-Source Charge 9.6 nC
Gate-Drain Charge 22.8 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
=25V,f=1MHz,VGS=0
DS
V
=50V,ID=25A
DD
RG= 4.7Ω VGS=10V
(see test circuit, Figure 3)
VDD=50V,ID=25A,
RG=4.7Ω, VGS= 10V
(see test circuit, Figure 3)
1780 pF
112 pF
28 ns
80
84
28
nC
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
2. Pulse width limited by safe operating area.
Source-drain Current 50 A
(2)
Source-drain Current (pulsed) 200 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=50A,VGS=0
= 50 A, di/dt = 100A/µs,
I
SD
VDD=25V,Tj= 150°C
(see test circuit, Figure 5)
114
456
8
1.3 V
ns
nC
A
3/13
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STP40NF10 - STD40NF10 - STB40NF10
Thermal Impedance For TO-220/D²PAKSafe Operating Area For TO-220/D²PAK
Thermal Imped ance For DPAKSafe Operating Area For DPAK
Output Characteristics Transfer Characteristics
4/13
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STP40NF10 - STD 40N F10 - STB40NF10
Static Drain-source On ResistanceTransconductance
Gate Charge vs Gate-so urce V oltage
Capacitance Variations
Normalized On Resistance vs T em peratureNormalized Gate Threshold Voltage vs Temp.
5/13
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STP40NF10 - STD40NF10 - STB40NF10
Normalized Drain-Source Breakdown vs Temp.Source-drain Diode Forward Characteristics
6/13
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STP40NF10 - STD 40N F10 - STB40NF10
Fig. 2: Unc lam ped Inductive WaveformFig. 1: Unc lamped Inductive Loa d Test Circuit
Fig. 3: Switchi ng T im es Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gat e Charge test Circuit
7/13
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STP40NF10 - STD40NF10 - STB40NF10
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
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STP40NF10 - STD 40N F10 - STB40NF10
P032P_B
TO-252 (DPAK) MECHANICAL DATA
DIM.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0
MIN. TYP. MAX. MIN. TYP. MAX.
o
mm inch
o
8
o
0
o
0
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STP40NF10 - STD40NF10 - STB40NF10
D2PAK MECHANICAL DATA
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm. inch
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º 8º
3
10/13
1
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STP40NF10 - STD 40N F10 - STB40NF10
DPAK FOOTPRINT
All dimensions are i n millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18. 4 0.645 0.724
N 50 1.968
T 22.4 0.881
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
* on sales ty pe
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
2500 2500
11/13
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STP40NF10 - STD40NF10 - STB40NF10
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26. 4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales ty pe
12/13
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
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STP40NF10 - STD 40N F10 - STB40NF10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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