Page 1
STP36N05L
STP36N05LFI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
■ TYPICAL R
DS(on)
= 0.033 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
o
C
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175
o
C OPERATING TEMPERATURE
■ APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
1
2
3
TO-220 ISOWATT220
November 1996
TYPE V
DSS
R
DS(on)
I
D
STP 36N05L
STP 36N05LFI
50 V
50 V
<0.04Ω
<0.04Ω
36 A
21 A
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
STP 36N05L ST P36N05LF I
V
DS
Drain - s ource Voltage (VGS=0) 50 V
V
DGR
Drain- gate Voltage (RGS=20kΩ)50V
V
GS
Gate-source Voltage ± 15 V
I
D
Drain Current (continuous) at Tc=25oC3621A
I
D
Drain Current (continuous) at Tc=100oC25 14A
I
DM
(•) Drain Current (pulsed) 144 144 A
P
tot
Total D i ssipation at Tc=25oC 120 40 W
Derat ing Factor 0.8 0.27 W/
o
C
V
ISO
Ins ulation Withs t and Voltage (DC) 20 00 V
T
stg
St or a ge Tem perature -65 to 175
o
C
T
j
Max. Operating Junctio n Temperatur e 175
o
C
(•) Pulsewidth limited bysafe operating area
1
2
3
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THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
Thermal Resistance Junction - cas e M ax 1.25 3.75
o
C/W
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purp ose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)
36 A
E
AS
Single Pul se Avalanche Ener gy
(starti ng T
j
=25oC, ID=IAR,VDD=25V)
240 mJ
E
AR
Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)
60 mJ
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(Tc= 100oC, puls e width limited by Tjmax, δ <1%)
25 A
ELECTRICAL CHARACTERISTICS (T
case
=25oC unless otherwise specified)
OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
Break d own Volta ge
ID=250µAVGS=0 50 V
I
DSS
Zer o Gate Voltage
Drain Current (VGS=0)
VDS=MaxRating
VDS= Max R ating x 0.8 Tc=125oC
1
10
µA
µA
I
GSS
Gat e- body Leakage
Current (V
DS
=0)
V
GS
= ± 15 V ± 100 nA
ON (∗)
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID=250µA11.62.5V
R
DS(on)
St at ic Drain-s our ce O n
Resistance
VGS=5 V ID= 18 A 0.033 0.04 Ω
I
D(on)
On St ate Dra in Current VDS>I
D(on)xRDS(on)max
VGS=10V
36 A
DYNAMIC
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansconductance
VDS>I
D(on)xRDS(on)maxID
=18A 12 24 S
C
iss
C
oss
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS=25V f=1MHz VGS= 0 1350
450
130
1800
600
200
pF
pF
pF
STP36N05L/FI
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=25V ID=18A
RG=50 Ω VGS=5V
(see test circuit, figure 3)
90
550
130
800
ns
ns
(di/dt)
on
Turn-on C urrent Slope VDD=40V ID=36A
RG=50 Ω VGS=5V
(see test circuit, figure 5)
85 A/ µ s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge
VDD=40V ID=36A VGS=5V 35
11
19
50 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off -voltage R ise Time
Fall Time
Cross-over Time
VDD=40V ID=36A
RG=50 Ω VGS=5V
(see test circuit, figure 5)
110
180
310
160
260
450
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
36
144
A
A
V
SD
(∗) For w ar d On Volt age ISD=36A VGS=0 1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD= 36 A di/dt = 100 A/µs
VDD=30V Tj=150oC
(see test circuit, figure 5)
100
0.27
5.5
ns
µC
A
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
STP36N05L/FI
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Thermal Impedance For TO-220
Derating Curve For TO-220
Output Characteristics
Thermal Impedance For ISOWATT220
Derating Curve For ISOWATT220
Transfer Characteristics
STP36N05L/FI
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Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
Temperature
STP36N05L/FI
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Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Accidental Overload Area Source-drain Diode Forward Characteristics
STP36N05L/FI
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Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
Fig. 1: Unclamped Inductive Load Test Circuits
STP36N05L/FI
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DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP36N05L/FI
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Page 9
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
Ø
F
L3
G1
123
F2
F1
L7
L4
ISOWATT220 MECHANICAL DATA
P011G
STP36N05L/FI
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information nor for any infringement of patents or other rights of third partieswhich may results from its use. No
licenseis granted by implication orotherwise under any patent or patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in thispublication are subject tochangewithoutnotice. Thispublication supersedes and replacesall information previouslysupplied.
SGS-THOMSONMicroelectronics products are not authorized for use as critical components in lifesupport devices or systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.
1996 SGS-THOMSONMicroelectronics -Printed in Italy- AllRightsReserved
SGS-THOMSONMicroelectronics GROUPOF COMPANIES
Australia- Brazil -Canada -China - France- Germany - HongKong- Italy - Japan- Korea- Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland-Taiwan - Thailand- UnitedKingdom - U.S.A
.
STP36N05L/FI
10/10
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