Datasheet STP30NE06L, STP30NE06LFP Datasheet (SGS Thomson Microelectronics)

STP30NE06L



STP30NE06LFP

N - CHANNEL 60V - 0.035 Ω - 30A - TO-220/TO-220FP

STripFET POWER MOSFET

TYPE V

ST P30NE06L
ST P30NE06LFP

■ TYPICALR

■ 100%AVALANCHETESTED

■ LOW GATE CHARGE

■ APPLICATIONORIENTED

DS(on)

DSS

60 V
60 V

= 0.035 Ω

CHARACTERIZATION

DESCRIPTION

This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor showsextremelyhigh packing densityfor low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re­markablemanufacturingreproducibility.

APPLICATIONS

■ DC MOTOR CONTROL

■ DC-DC& DC-ACCONVERTERS

■ SYNCHRONOUSRECTIFICATION

R

DS(on)

<0.05Ω
<0.05Ω

I

D

30 A
17 A

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP30NE06L STP30NE06L FP

V

V

V

I

DM

P

V

T

(•) Pulse width limited by safe operating area

March 1999

Drain-source Voltage (VGS=0) 60 V

DS

Drain- ga t e Voltage (RGS=20kΩ)60V

DGR

Gate-s ource Volt age ± 20 V

GS

I

Drain Cur rent (cont i nuous) at Tc=25oC3017A

D

I

Drain Cur rent (cont i nuous) at Tc= 100oC2112A

D

(•) Drain Cur rent (pulse d) 120 68 A

Total Dissipation at Tc=25oC8030W

tot

Derat i ng Factor 0.53 0.2 W/
Ins ula t ion Withst and Voltage (DC)  2000 V

ISO

St orage Tem p er at u re -65 to 175

stg

T

Max. Operating Junct ion Temperature 175

j

o

C

o

C

o

C

1/9

STP30NE06L/FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Valu e Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max 1.875 5
Ther mal Resistanc e Junct ion-ambient Max

Ther mal Resistanc e Case-sink Ty p
Maximum L ead Temperature F or Solder ing P urp os e

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pul se Avalanche Ener gy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

62.5

0.5

300

20 A

100 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 60 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Curre nt (V

GS

Gat e- bod y Leakag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc= 125oC

V

DS

V

=± 20 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250µA 1 1.75 2.5 V
Sta t ic Drain-s our c e On

Resistance

VGS=5V ID=15A

=10V ID=15A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on )max

0.045

0.035

30 A

0.06

0.05

VGS=10V

DYNAMIC

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capaci t ance

iss

Out put Capac it anc e

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

=15 A 10 18 S

VDS=25V f=1MHz VGS= 0 1350

195

58

µA
µA

Ω
Ω

pF
pF
pF

2/9

STP30NE06L/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

t

d(on)

Tur n-on Delay Time
Rise Time

t

r

VDD=30V ID=15A
R

=4.7

G

Ω

VGS=4.5V

25

105

(Resis t iv e Load, see fig. 3)

Q
Q
Q

Tot al Gate Charge

g

Gat e- Source Char g e

gs

Gate-Drain Charge

gd

VDD=48V ID=30A VGS=5V 20

8

10

28 nC

SWITCHINGOFF

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

t

d(off)

Tur n-of f Dela y Tim e

t

Fall T ime

f

VDD=30V ID=15A

=4.7 Ω VGS=4.5V

R

G

50
20

(Resis t iv e Load, see fig. 3)

t

r(Voff)

t

t

Off-volt age Rise Time
Fall T ime

f

Cross-over Tim e

c

VDD=48V ID=30A

=4.7 Ω VGS=4.5V

R

G

(Indu ct iv e Load, see fig . 5)

15
40
60

SOURCEDRAIN DIODE

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

I

V

I

SDM

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current

30

120

(pulsed)

(∗)ForwardOnVoltage ISD=30A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 30 A di/dt = 100 A /µs

=30V Tj=150oC

V

DD

(see test circuit, fig. 5)

80

0.18
Charge
Reverse Recovery

4.5

Current

ns
ns

nC
nC

ns
ns

ns
ns
ns

A
A

ns

µC

A

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area

SafeOperating Area for TO-220 SafeOperating Area for TO-220FP

3/9

STP30NE06L/FP

ThermalImpedancefor TO-220

OutputCharacteristics

ThermalImpedanceforTO-220FP

TransferCharacteristics

Transconductance

4/9

Static Drain-sourceOn Resistance

STP30NE06L/FP

Gate Charge vs Gate-sourceVoltage

NormalizedGate ThresholdVoltage vs
Temperature

CapacitanceVariations

NormalizedOn Resistancevs Temperature

Source-drainDiode Forward Characteristics

5/9

STP30NE06L/FP

Fig. 1:

UnclampedInductiveLoad TestCircuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductiveWaveform

Fig. 4: Gate Charge test Circuit

Fig. 5:

Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

6/9

TO-220 MECHANICALDATA

STP30NE06L/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

P011C

C

D1

L2

Dia.

L5

L7

L6

L9

7/9

STP30NE06L/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

8/9

STP30NE06L/FP

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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice.Thispublication supersedesand replacesall information previously supplied. STMicroelectronics products
are not authorizedfor useas critical components in lifesupport devices or systems without express written approval of STMicroelectronics.

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