Datasheet STP30NE06FP, STP30NE06 Datasheet (SGS Thomson Microelectronics)

STP30NE06



N - CHANNEL 60V - 0.042

TYPE V

ST P30NE06
ST P30NE06FP

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ 100%AVALANCHETESTED

o

■ 175

■ HIGHdV/dt CAPABILITY

■ APPLICATIONORIENTED

C OPERATINGTEMPERATURE

DS(on)

DSS

60 V
60 V

= 0.042

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature Size”
processwhereby a single body is implantedon a
strip layout structure. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalance characteristics and
less critical alignment steps therefore a remarka­ble manufacturingreproducibility.

R

DS(on)

<0.050Ω
<0.050

Ω

Ω

I

D

30 A
17 A

STP30NE06FP

Ω

- 30A - TO-220/TO-220FP

STripFET POWER MOSFET

PRELIMINARY DATA

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ DC MOTOR CONTROL

■ DC-DC& DC-AC CONVERTERS

■ SYNCHRONOUSRECTIFICATION

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

ST P30NE06 STP30 NE 0 6F P

V

V

V

I

DM

P

V

dV/d t Peak Diode Recov er y voltage sl ope 7 V/ns

T

(•) Pulse width limited by safeoperating area (1)I

’

January 1999

Dra in- sour c e V ol t age (VGS=0) 60 V

DS

Dra in- gate Voltage (RGS=20kΩ)

DGR

Gat e-source Volt age ± 20 V

GS

Dra in Curr ent (continuous) at Tc=25oC3017A

I

D

Dra in Curr ent (continuous) at Tc=100oC2112A

I

D

60 V

(•) Dra in Curr ent (pulsed) 120 68 A

Tot al Dis s ipation at Tc=25oC8030W

tot

Der ati ng F actor 0.53 0.2 W/
Insulation Withstand Voltage (DC)  2000 V

ISO

St orage Temperature -65 to 175

stg

Max. Oper at ing Junc t ion Temperature 175

T

j

≤

30 A, di/dt≤300A/µs, V

SD

DD

≤

V

(BR)DSS,Tj

≤

T

JMAX

o

C

o

C

o

C

1/6

STP30NE06/FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value U ni t

I

AR

E

Ther mal Resistanc e Junct ion-case Max 1.87 5
Ther mal Resistanc e Junct ion-ambient Max

Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temperat ure F or Soldering Purpos e

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Puls e Avalanche E nergy

AS

(starting T

=25oC, ID=IAR,VDD=30V)

j

max)

j

62.5

0.5

300

30 A

100 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

=250µAVGS=0

I

D

60 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Curre nt (V

GS

Gat e- bod y Leakag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

=± 20 V

V

GS

1

10

± 100 nA

ON (∗)

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Sta t ic Drain-source On

V

DS=VGSID

= 250µA

VGS=10V ID= 15 A 0.042 0.050 Ω

234V

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on )max

30 A

VGS=10V

DYNAMIC

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capacit anc e

iss

Out put Capacit ance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

=15 A 7 13 S

VDS=25V f=1MHz VGS= 0 1450

200

45

µ
µA

pF
pF
pF

A

2/6

STP30NE06/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on Time

t

Rise Time

r

Tot al Gate C har ge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=30V ID=15A
R

G

=4.7

Ω

V

GS

=10V

VDD=48V ID=30A VGS=10V 35

18
95

50 nC
10
13

SWITCHING OFF

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off-volt age Rise Time
Fall T ime

f

Cross-over Time

c

VDD=48V ID=30A

=4.7 ΩVGS=10V

R

G

10
41
60

SOURCEDRAINDIODE

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

Source-drain Current

(•)

Source-drain Current

30

120

(pulsed)

(∗)ForwardOnVoltage ISD=30A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

= 30 A di/dt = 100 A/µs

I

SD

=30V Tj= 150oC

V

DD

85

0.19
Charge
Reverse Recovery

4.5

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µ

A

C

3/6

STP30NE06/FP

TO-220 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

P011C

C

D1

L2

Dia.

L5

L7

L6

L9

4/6

TO-220FP MECHANICAL DATA

STP30NE06/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

5/6

STP30NE06/FP

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implicationor otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components inlife support devices or systems without express written approval of STMicroelectronics.

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