Datasheet STP30N06FI, STP30N06 Datasheet (SGS Thomson Microelectronics)

STP30N06

STP30N06FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

STP 30N06
STP 30N06FI

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

o

■ 175

■ APPLICATION ORIENTED

C OPERATING TEMPERATURE

DS(on)

DSS

60 V
60 V

= 0.045 Ω

R

DS(on)

<0.05Ω
<0.05Ω

I

D

30 A
19 A

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

3

2

1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

STP 30N06 STP3 0N06FI

V

V

V

I

DM

P

V

T

(•) Pulsewidth limited bysafe operating area

December 1996

Drain - s ource Voltage (VGS=0) 60 V

DS

Drain- gate Voltage (RGS=20kΩ)60V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC3019A

I

D

Drain Current (continuous) at Tc=100oC21 13A

I

D

(•) Drain Current (pulsed) 120 120 A

Total D i ssipation at Tc=25oC 105 40 W

tot

Derat ing Factor 0.7 0.27 W/
Ins ulation Withs t and Voltage (DC)  20 00 V

ISO

St or a ge Tem perature -65 to 175

stg

Max. Operating Junctio n Temperatur e 175

T

j

o
o

o

C

C
C

1/10

STP30N06/FI

THERMAL DATA

TO-220 ISOW ATT 220

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e M ax 1.43 3.57
Thermal Resistance Junction- ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purp ose

l

Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng T
Repetitive Avalanc he Energ y

AR

=25oC, ID=IAR,VDD=25V)

j

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive

(Tc= 100oC, puls e width limited by Tjmax, δ <1%)

62.5

0.5

300

30 A

160 mJ

40 mJ

21 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS=0 60 V

Break d own Volta ge

I

DSS

I

GSS

Zer o Gate Voltage
Drain Current (VGS=0)

Gat e- body Leakage
Current (V

DS

=0)

VDS=MaxRating
VDS= Max R ating x 0.8 Tc=125oC

= ± 20 V ± 100 nA

V

GS

10

1

ON (∗)

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA22.94V
St at ic Drain-s our ce O n

VGS=10V ID= 15 A 0.045 0.05 Ω

Resistance

I

D(on)

On St ate Dra in Current VDS>I

D(on)xRDS(on)max

30 A

VGS=10V

DYNAMIC

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=15A 8 12 S

VDS=25V f=1MHz VGS=0 950

420
110

1250

600
200

µA
µA

pF
pF
pF

2/10

STP30N06/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on Time

t

Rise Time

r

Turn-on C urrent Slope VDD=40V ID=30A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=30V ID=30A
RG=50 Ω VGS=10V

50

19070270

(see test circuit, figure 3)

190 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)

VDD=40V ID=30A VGS=10V 30

11
14

VDD=40V ID=30A
RG=50 Ω VGS=10V
(see test circuit, figure 5)

120

75

180

45 nC

170
100
250

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

30

120

(pulsed)

V

(∗) For w ar d On Volt age ISD=30A VGS=0 1.6 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD= 30 A di/dt = 100 A /µs
VDD=30V Tj=150oC
(see test circuit, figure 5)

85

0.25

Charge

I

RRM

Reverse Recovery

6

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220

A
A

ns

µC

A

3/10

STP30N06/FI

Thermal Impedeance For TO-220

Derating Curve For TO-220

Thermal Impedance For ISOWATT220

Derating Curve For ISOWATT220

Output Characteristics

4/10

Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

STP30N06/FI

Temperature

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs

5/10

STP30N06/FI

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode Forward Characteristics

6/10

STP30N06/FI

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 2: Unclamped Inductive Waveforms

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

7/10

STP30N06/FI

TO-220 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

8/10

ISOWATT220 MECHANICAL DATA

STP30N06/FI

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.4 0.7 0.015 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

Ø

F1

F

G1

H

G

F2

123

L2

L4

P011G

9/10

STP30N06/FI

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information nor for any infringement of patents or other rights of third partieswhich may results from its use. No
licenseis granted by implication orotherwise under any patent or patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in thispublication are subject tochangewithoutnotice. Thispublication supersedes and replacesall information previouslysupplied.
SGS-THOMSONMicroelectronics products are not authorized for use as critical components in lifesupport devices or systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.

 1996 SGS-THOMSONMicroelectronics -Printed in Italy- AllRightsReserved

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