Page 1
STP2NA50
STP2NA50FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE V
STP2NA50
STP2NA50FI
■ TYPICALR
■ ± 30V GATE TO SOURCE VOLTAGERATING
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHEDATAAT 100
■ LOW INTRINSIC CAPACITANCES
■ GATECHARGEMINIMIZED
■ REDUCEDTHRESHOLD VOLTAGESPREAD
DS(on)
DSS
500 V
500 V
=3.25 Ω
R
DS(on)
<4Ω
<
4 Ω
I
D
2.8 A
2A
o
C
APPLICATIONS
■ MEDIUMCURRENT, HIGHSPEED
SWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ CONSUMERAND INDUSTRIALLIGHTING
3
2
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
ST P2 NA50 ST P2NA 50FI
V
V
DGR
V
I
DM
P
V
T
(•)Pulse width limited by safe operating area
March 1996
Drain-So urce Vol ta ge (Vgs= 0 ) 500 V
DS
Drain-G at e Voltage (Rgs=20KΩ) 500 V
Gate-Source Voltage ± 30 V
GS
Drain-Cur rent (cont i nuous ) a t Tc=25oC2.82A
I
D
Drain-Cur rent (cont i nuous ) a t Tc=100oC1.81.25A
I
D
(•) Drain-Current (Pulsed) 11.2 11.2 A
Tot al Dissipati on at Tc=25oC7535W
tot
Derat ing Factor 0.6 0.28 W/
Ins ulat ion Withstand Vo lt age (DC) - 4000 V
ISO
Stora ge Tem pe ra ture -65 to 150
stg
Max Operating J unction Temperature 150
T
j
o
C
o
C
o
C
1/6
Page 2
STP2NA50/FI
THERMAL DATA
TO 220 ISOWATT220
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max Val ue Uni t
I
AR
E
E
I
AR
Ther mal Resistance Junctio n-c ase Max 1.67 3.57
Ther mal Resistance Junctio n-am bien t Max
Ther mal Resistance Ca s e-s i nk Typ
Maximum Lead Temper ature For Solder in g P ur pose
l
Avalanche Current, Repetitiv e or Not-Repe t it ive
(pulse width lim i t ed by T
Single Pu lse Avalanc he E nerg y
AS
(starti ng T
Repetitive Av alanche Energy
AR
=25oC, ID=IAR,VDD=50V)
j
(pulse width lim i t ed by T
max, δ <1%)
j
max, δ <1%)
j
Avalanche Current, Repetitiv e or Not-Repe t it ive
=100oC, p ulse width lim it ed by Tjmax, δ <1%)
(T
c
62.5
0.5
300
2.8 A
42 mJ
1.6 mJ
1.8 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
V
(BR)DSS
Drain-source
ID= 250 µAV
= 0 500 V
GS
Break dow n Voltage
I
I
DSS
GSS
Zero Gate Voltage
Drain Current (V
GS
=0)
Gat e- Source Leakage
Current (V
DS
=0)
=MaxRating
V
DS
V
=MaxRatingx0.8 Tc= 125oC
DS
V
= ± 30 V 100 mA
GS
250
1000µAµA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
V
GS(th )
R
DS(on)
I
D(on)
Gat e Thre shold Volt age VDS=V
St at ic Drain-source On
Resistance
VGS=10V ID=1.4A
=10V ID=1.4A Tc= 100oC
V
GS
On State Drain Current VDS>I
GS ID
D(on)xRDS(on)max
= 250 µA2.2533.75V
3.25 4
8
2.8 A
VGS=10 V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capac it an ce
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=1.4A 0.8 2 S
VDS=25V f=1MHz VGS= 0 300
55
15
400
70
20
Ω
Ω
pF
pF
pF
2/6
Page 3
STP2NA50/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on Time
t
Rise Time
r
Tur n-on C urr ent Slope VDD=400V ID=2.8A
on
Tot al Gat e Charge
g
Gate-Source Charge
gs
Gat e- Drain Charge
gd
VDD=250V ID=1.4A
=4.7 Ω VGS=10V
R
G
=47 Ω VGS=10V
R
G
VDD=400V ID=2.8 A VGS=10V 18
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall T ime
f
Cross-over T ime
c
VDD=400V ID=2.8A
=4.7 Ω VGS=10V
R
G
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗)ForwardOnVoltage ISD=2.8A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD=2.8A di/dt=100A/µs
=100V Tj=150oC
V
DD
Charge
Reverse Recovery
Current
7
8
10
11
350 A/µ s
25 nC
5.5
7
7
7
14
10
10
20
2.8
11.2
380
4.4
23
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/6
Page 4
STP2NA50/FI
TO-220MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
A
C
mm inch
E
D
4/6
L5
L7
Dia.
L6
D1
L2
L9
L4
F2
F1
G1
H2
G
F
P011C
Page 5
ISOWATT220MECHANICAL DATA
STP2NA50/FI
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
A
mm inch
E
D
B
L3
L6
L7
¯
H
L2
F1
F2
F
123
L4
G1
G
P011G
5/6
Page 6
STP2NA50/FI
Information furnished is believedto be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequencesof use of such information nor for any infringement of patentsor other rights ofthird parties whichmay results from its use. No
licenseis granted by implicationor otherwise underany patentor patent rightsof SGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subject to change without notice.This publication supersedes and replaces all information previouslysupplied.
SGS-THOMSONMicroelectronicsproductsare notauthorizedfor useascritical components in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1995 SGS-THOMSONMicroelectronics - All RightsReserved
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