Datasheet STP2N60FI, STP2N60 Datasheet (SGS Thomson Microelectronics)

STP2N60

STP2N60FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

STP 2N60
STP 2N60FI

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ APPLICATION ORIENTED

DS(on)

DSS

600 V
600 V

= 3.2 Ω

R

DS(on)

<3.5Ω
<3.5Ω

I

D

2.9 A

2.2 A

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWERSUPPLIES (SMPS)

■ CHOPPER REGULATORS, CONVERTERS,

MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT

3

2

1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

STP2N60 STP2N60FI

V

V

V

I

DM

P

V

T

(•) Pulsewidth limited bysafe operating area

December 1996

Drain - s ource Voltage (VGS=0) 600 V

DS

Drain- gate Voltage (RGS=20kΩ)600V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC2.92.2A

I

D

Drain Current (continuous) at Tc=100oC1.7 1.3A

I

D

(•) Drain Current (pulsed) 11 11 A

Total Di ssipation a t Tc=25oC7035W

tot

Derat ing Factor 0.56 0.28 W/
Ins ulation Withs t and Voltage (DC)  2000 V

ISO

St or a ge Tem perature -65 t o 150

stg

Max. Operating Jun ction T emperature 150

T

j

o
o

o

C

C
C

1/10

STP2N60/FI

THERMAL DATA

TO-220 ISOW ATT 220

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e M ax 1.78 3.57
Thermal Resistance Junction- ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead Temperature For So ldering Purpose

l

Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng T
Repetitive Avalanc he Energ y

AR

=25oC, ID=IAR,VDD=50V)

j

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive

(Tc= 100oC, pulse width l imited by Tjmax, δ <1%)

62.5

0.5

300

2.9 A

105 mJ

3.5 mJ

1.7 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

OFF

Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS= 0 600 V

Break d own Volta ge

I

DSS

I

GSS

Zer o G at e V oltage
Drain Current (VGS=0)

Gat e- body Leakage
Current (V

DS

=0)

VDS=MaxRating
VDS= Max Rating x 0.8 Tc=125oC

= ± 20 V ± 10 0 nA

V

GS

25

250

ON (∗)

Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n

VGS=10V ID= 1.5 A 3.2 3.5 Ω

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

2.9 A

VGS=10V

DYNAMIC

Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=1.5A 1 2.4 S

VDS=25V f=1MHz VGS=0 450

62
23

600

85
35

µA
µA

pF
pF
pF

2/10

STP2N60/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on T ime

t

Rise Time

r

Turn-on Current S lope VDD=480V ID=2.9A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage Rise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAINDIODE

VDD=35V ID=2A
RG=50 Ω VGS=10V

25

11040150

(see test circuit, figure 3)

75 A/ µ s
RG=50 Ω VGS=10V
(see test circuit, figure 5)

VDD= 480 V ID=2.9A VGS=10V 33

7

13

VDD=480V ID=2.9A
RG=50 Ω VGS=10V
(see test circuit, figure 5)

70

20

100

45 nC

95
30

130

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain C urrent

(•)

Source-drain C urrent

2.9
11

(pulsed)

V

(∗) Forward On Voltage ISD=2.9A VGS=0 2 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD=2.9A di/dt=100A/µs
VDD=80V Tj=150oC
(see test circuit, figure 5)

500

7

Charge

I

RRM

Reverse Recovery

28

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220

A
A

ns

µC

A

3/10

STP2N60/FI

Thermal ImpedeanceFor TO-220

Derating Curve For TO-220

Thermal ImpedanceFor ISOWATT220

Derating Curve For ISOWATT220

Output Characteristics

4/10

Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

STP2N60/FI

Temperature

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs

5/10

STP2N60/FI

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode ForwardCharacteristics

6/10

STP2N60/FI

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 2: Unclamped Inductive Waveforms

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

7/10

STP2N60/FI

TO-220 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

8/10

ISOWATT220 MECHANICAL DATA

STP2N60/FI

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.4 0.7 0.015 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

Ø

F1

F

G1

H

G

F2

123

L2

L4

P011G

9/10

STP2N60/FI

Information furnished is believed to be accurate and reliable. However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or otherrights of third parties which may results from its use.No
licenseis granted by implication or otherwise under any patentor patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subject to change withoutnotice. Thispublication supersedes andreplacesall information previously supplied.
SGS-THOMSONMicroelectronics products are not authorized for use ascritical components in lifesupport devices orsystemswithout express
writtenapproval ofSGS-THOMSONMicroelectonics.

 1996 SGS-THOMSON Microelectronics -Printed in Italy- AllRightsReserved

Australia- Brazil - Canada -China - France- Germany - HongKong- Italy -Japan- Korea-Malaysia - Malta- Morocco- TheNetherlands -

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