Datasheet STP21N05L, STP21N05LFI Datasheet (SGS Thomson Microelectronics)

STP21N05L

STP21N05LFI

N - CHANNEL ENHANCEMENT MODE

LOW THRESHOLD POWER MOS TRANSISTOR

TYPE V

STP 21N05L
STP 21N05LFI

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW GATE CHARGE

■ LOGIC LEVEL COMPATIBLE INPUT

■ 175

■ APPLICATION ORIENTED

o

C OPERATING TEMPERATURE

DS(on)

DSS

50 V
50 V

= 0.065 Ω

R

DS(on)

< 0. 085 Ω
< 0. 085 Ω

I

D

21 A
14 A

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

3

2

1

1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

3

2

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

STP 21N05L ST P21N05LF I

V

V

V

I

DM

P

V

T

(•) Pulsewidth limited bysafe operating area

July 1993

Drain - s ource Voltage (VGS=0) 50 V

DS

Drain- gate Voltage (RGS=20kΩ)50V

DGR

Gate-source Voltage ± 15 V

GS

Drain Current (continuous) at Tc=25oC2114A

I

D

Drain Current (continuous) at Tc=100oC14 9A

I

D

(•) Drain Current (pulsed) 84 84 A

Total D i ssipation at Tc=25oC8035W

tot

Derat ing Factor 0.53 0.23 W/
Ins ulation Withs t and Voltage (DC)  2000 V

ISO

St or a ge Tem perature -65 to 175

stg

Max. Operating Junctio n Temperatur e 175

T

j

o
o

o

C

C
C

1/10

STP21N05L/FI

THERMAL DATA

TO-220 ISOW ATT 220

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e M ax 1.88 4.29
Thermal Resistance Junction- ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purp ose

l

Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng T
Repetitive Avalanc he Energ y

AR

=25oC, ID=IAR,VDD=25V)

j

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive

(Tc= 100oC, puls e width limited by Tjmax, δ <1%)

62.5

0.5

300

21 A

80 mJ

20 mJ

14 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS=0 50 V

Break d own Volta ge

I

DSS

I

GSS

Zer o Gate Voltage
Drain Current (VGS=0)

Gat e- body Leakage
Current (V

DS

=0)

VDS=MaxRating
VDS= Max R ating x 0.8 Tc=125oC

= ± 15 V ± 100 nA

V

GS

250

1000µAµA

ON (∗)

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID=250µA11.62.5V
St at ic Drain-s our ce O n

Resistance
On St ate Dra in Current VDS>I

VGS=5V ID= 10. 5 A
VGS=5V ID=10.5A Tc= 100oC

D(on)xRDS(on)max

0.065 0.085

0.17

21 A

VGS=10V

DYNAMIC

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

= 10.5 A 6 15 S

VDS=25V f=1MHz VGS=0 700

250

70

1000

350
100

Ω
Ω

pF
pF
pF

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STP21N05L/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on Time

t

Rise Time

r

Turn-on C urrent Slope VDD=40V ID=21A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=30V ID=10.5A
RG=50 Ω VGS=5V

65

37095530

(see test circuit, figure 3)

130 A/µs
RG=50 Ω VGS=5V
(see test circuit, figure 5)

VDD=40V ID=21A VGS=5V 18

6

10

VDD=40V ID=21A
RG=50 Ω VGS=5V
(see test circuit, figure 5)

70
100
180

26 nC

100
150
260

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

21
84

(pulsed)

V

(∗) For w ar d On Volt age ISD=21A VGS=0 1.6 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD= 21 A di/dt = 100 A/µs
VDD=30V Tj=150oC
(see test circuit, figure 5)

65

0.13

Charge

I

RRM

Reverse Recovery

4

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas Safe Operating Areas

A
A

ns

µC

A

3/10

STP21N05L/FI

Thermal Impedeance For TO-220

Derating Curve For TO-220

Thermal Impedance For ISOWATT220

Derating Curve For ISOWATT220

Output Characteristics

4/10

Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

STP21N05L/FI

Temperature

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs

5/10

STP21N05L/FI

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode Forward Characteristics

6/10

STP21N05L/FI

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 2: Unclamped Inductive Waveforms

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

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STP21N05L/FI

TO-220 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

8/10

ISOWATT220 MECHANICAL DATA

STP21N05L/FI

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027

F 0.75 1 0.030 0.039

F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409

L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

Ø

F1

H

L2

F2

F

123

L4

G1

G

P011G

9/10

STP21N05L/FI

Information furnished isbelieved to be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes noresponsability for the
consequences of use of suchinformation nor for any infringementof patents orother rights of third parties whichmay results from its use. No
license isgrantedby implicationor otherwiseunder anypatentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subjectto change without notice.This publication supersedes and replacesall information previouslysupplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useascriticalcomponents inlifesupportdevices orsystemswithout express
written approvalof SGS-THOMSON Microelectonics.

 1994 SGS-THOMSONMicroelectronics - All Rights Reserved

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