Datasheet STP20NE06LFP, STP20NE06L Datasheet (SGS Thomson Microelectronics)

Page 1
STP20NE06L
N - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FP
TYPE V
ST P20NE06L ST P20NE06LFP
TYPICALR
EXCEPTIONALdv/dtCAPABILITY
LOW GATE CHARGE 100
APPLICATIONORIENTED
DS(on)
DSS
60 V 60 V
= 0.06
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size ” strip-basedprocess. The resulting transi- stor shows extremelyhigh packing densityforlow on-resistance, rugged avalance characteristics and less critical alignment steps therefore a re­markablemanufacturingreproducibility.
R
DS(on)
<0.07 <0.07
o
C
I
D
20 A 13 A
STP20NE06LFP
STripFET POWER MOSFET
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
DC MOTOR CONTROL
DC-DC& DC-AC CONVERTERS
SYNCHRONOUSRECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
STP 20NE06 STP20 NE 06FP
V
V
V
I
DM
P
V
dv/d t Peak Diode Recov e r y voltage slope 7 V/ns
T
() Pulse width limited by safe operating area (1)ISD≤ 20 A, di/dt ≤ 300A/µs, VDD≤ V
April 1999
Drain-source Voltage (VGS=0) 60 V
DS
Drain- ga t e Voltage (RGS=20kΩ)60V
DGR
Gate-s ource Voltage ± 20 V
GS
I
Drain Cur rent (conti nuous) at Tc=25oC2013A
D
I
Drain Cur rent (conti nuous) at Tc= 100oC149A
D
() Drain Current (pulsed) 80 80 A
Total Dissipation at Tc=25oC7030W
tot
Derat i ng Fa c t or 0.47 0.2 W/ Ins ula t ion Wit hst and Volta ge (DC) 2000 V
ISO
St orage Temp erat ure -65 to 175
stg
T
Max. Operating Jun ct ion Tem p er at u re 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/9
Page 2
STP20NE06L/FP
THERMAL DATA
TO-220 TO-220FP
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Unit
I
AR
E
Ther mal Resistanc e Junct ion-case M a x 2.14 5 Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p Maximum Lead Tempe ra tur e F or S o ldering Purpos e
l
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T
Single Pul se Avalanc he Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=35V)
j
max)
j
62.5
0.5
300
20 A
100 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Con ditions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 60 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage Drain Curre nt (V
GS
Gat e- bod y Leakag e Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON()
Symbol Parameter Test Con ditions Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250µA11.72.0V Sta t ic Drain-s our c e On
Resistance
VGS=5V ID=10A
=10V ID=10A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on)max
0.07
0.06
20 A
0.085
0.07
VGS=10V
DYNAMIC
Symbol Parameter Test Con ditions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=10 A 5 9 S
VDS=25V f=1MHz VGS= 0 800
125
40
µA µA
Ω Ω
pF pF pF
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Page 3
STP20NE06L/FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Con ditions Min. Typ. M ax. Unit
t
d(on)
Tur n-on Delay T ime Rise Time
t
r
VDD=30V ID=10A R
=4.7 W VGS=5V
G
20 45
(see test circuit, figure 3)
Q Q Q
Tot al Gate Charge
g
Gat e- Source Charg e
gs
Gate-Drain Charge
gd
VDD=48V ID=20A VGS=5V 14
8 4
20 nC
SWITCHINGOFF
Symbol Parameter Test Con ditions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Off-v oltage Rise Time Fall T ime
f
Cross-over T im e
c
VDD=48V ID=20A
=4.7 Ω VGS=5V
R
G
(see test circuit, figure 5)
10 25 42
SOURCEDRAINDIODE
Symbol Parameter Test Con ditions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration= 300µs, duty cycle 1.5% () Pulse width limited by safe operatingarea
Source-drain Current
(•)
Source-drain Current
20 80
(pulsed)
(∗)ForwardOnVoltage ISD=20A VGS=0 1.5 V
Reverse Recovery
rr
Time Reverse Recovery
rr
ISD= 20 A di/dt = 100 A/µs
=30V Tj= 150oC
V
DD
(see test circuit, figure 5)
65
130 Charge Reverse Recovery
4
Current
ns ns
nC nC
ns ns ns
A A
ns
nC
A
SafeOperating Area for TO-220 SafeOperating Area for TO-220FP
3/9
Page 4
STP20NE06L/FP
ThermalImpedancefor TO-220
OutputCharacteristics
ThermalImpedanceforTO-220FP
TransferCharacteristics
Transconductance
4/9
Static Drain-sourceOn Resistance
Page 5
STP20NE06L/FP
Gate Charge vs Gate-sourceVoltage
NormalizedGate ThresholdVoltage vs Temperature
CapacitanceVariations
NormalizedOn Resistancevs Temperature
Source-drainDiode Forward Characteristics
5/9
Page 6
STP20NE06L/FP
Fig. 1:
UnclampedInductiveLoad Test Circuit
Fig. 3: SwitchingTimes Test Circuits For ResistiveLoad
Fig. 2:
UnclampedInductive Waveform
Fig. 4: Gate Chargetest Circuit
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
6/9
Page 7
TO-220 MECHANICAL DATA
STP20NE06L/FP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409
L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
P011C
C
D1
L2
Dia.
L5
L7
L6
L9
7/9
Page 8
STP20NE06L/FP
TO-220FP MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
8/9
Page 9
STP20NE06L/FP
Information furnished is believed tobe accurate and reliable. However, STMicroelectronics assumes no responsibilityfor the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication orotherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are subjecttochange without notice. This publication supersedes andreplaces all information previouslysupplied. STMicroelectronicsproducts are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
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1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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