This Power Mosfet is the latest development of
STMicroelectronics unique ” Single Feature
Size ” strip-basedprocess. The resulting transi-
stor shows extremelyhigh packing densityforlow
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
R
DS(on)
<0.07Ω
<0.07Ω
o
C
I
D
20 A
13 A
STP20NE06LFP
STripFET POWER MOSFET
3
2
1
TO-220TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC& DC-AC CONVERTERS
■ SYNCHRONOUSRECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symb o lParameterVal u eUni t
STP 20NE06STP20 NE 06FP
V
V
V
I
DM
P
V
dv/d tPeak Diode Recov e r y voltage slope7V/ns
T
(•) Pulse width limited by safe operating area(1)ISD≤ 20 A, di/dt ≤ 300A/µs, VDD≤ V
April 1999
Drain-source Voltage (VGS=0)60V
DS
Drain- ga t e Voltage (RGS=20kΩ)60V
DGR
Gate-s ource Voltage± 20V
GS
I
Drain Cur rent (conti nuous) at Tc=25oC2013A
D
I
Drain Cur rent (conti nuous) at Tc= 100oC149A
D
(•)Drain Current (pulsed)8080A
Total Dissipation at Tc=25oC7030W
tot
Derat i ng Fa c t or0.470.2W/
Ins ula t ion Wit hst and Volta ge (DC)2000V
ISO
St orage Temp erat ure-65 to 175
stg
T
Max. Operating Jun ct ion Tem p er at u re175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/9
Page 2
STP20NE06L/FP
THERMAL DATA
TO-220TO-220FP
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
SymbolParameterMax Valu eUnit
I
AR
E
Ther mal Resistanc e Junct ion-caseM a x2.145
Ther mal Resistanc e Junct ion-ambie ntMax
Ther mal Resistanc e Case-sinkTy p
Maximum Lead Tempe ra tur e F or S o ldering Purpos e
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanc he Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=35V)
j
max)
j
62.5
0.5
300
20A
100mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
SymbolParameterTest Con ditionsMin.Typ.M ax.Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=060V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRatingTc= 125oC
V
DS
V
=± 20 V
GS
1
10
100nA
±
ON(∗)
SymbolParameterTest Con ditionsMin.Typ.M ax.Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250µA11.72.0V
Sta t ic Drain-s our c e On
Information furnished is believed tobe accurate and reliable. However, STMicroelectronics assumes no responsibilityfor the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication orotherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subjecttochange without notice. This publication supersedes andreplaces all information previouslysupplied. STMicroelectronicsproducts
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
The STlogo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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.
9/9
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