Datasheet STP20NE06FP, STP20NE06 Datasheet (SGS Thomson Microelectronics)

STP20NE06



N - CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP

TYPE V

ST P20NE06
ST P20NE06FP

■ TYPICALR

■ EXCEPTIONALdv/dtCAPABILITY

■ 100%AVALANCHETESTED

■ LOW GATE CHARGE 100

■ APPLICATIONORIENTED

DS(on)

DSS

60 V
60 V

= 0.06 Ω

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of
STMicroelectronics unique ” Single Feature
Size ” strip-basedprocess. The resulting transi-
stor shows extremelyhigh packing densityforlow
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re­markablemanufacturingreproducibility.

R

DS(on)

<0.080Ω
<0.080Ω

o

C

I

D

20 A
13 A

STP20NE06FP

STripFET POWER MOSFET

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ SOLENOIDAND RELAY DRIVERS

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ DC-DC& DC-AC CONVERTERS

■ AUTOMOTIVEENVIRONMENT(INJECTION,

ABS, AIR-BAG, LAMPDRIVERS,Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

ST P20NE06 STP20NE06FP

V

V

V

I

DM

P

V

dv/ dt P ea k Diode Recover y volt age slope 7 V/ ns

T

(•) Pulse width limited by safe operating area (1)ISD≤ 20 A, di/dt ≤ 300 A/µs, VDD≤ V

June 1999

Drain-source Voltage (VGS=0) 60 V

DS

Drain- gate Vol t age (RGS=20kΩ)60V

DGR

Gate-source Voltage ± 20 V

GS

I

Drain Curre nt (cont i nuous) at Tc=25oC2013A

D

Drain Curre nt (cont i nuous) at Tc=100oC149A

I

D

(•) Drain Curre nt (pulse d) 80 80 A

Total Dissipation at Tc=25oC7030W

tot

Derat ing F ac tor 0.47 0.2 W/
Ins ulat ion W i th s t and Voltage ( DC)  2000 V

ISO

Sto rage Temper at ur e -65 to 175

stg

T

Max. Operat ing Junct ion Tem pe ra ture 175

j

(BR)DSS,Tj≤TJMAX

o

C

o

C

o

C

1/9

STP20NE06/FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max V alue Unit

I

AR

E

Ther mal Resistanc e Junct ion-case M a x 2.14 5
Ther mal Resistanc e Junct ion-ambie nt Max

Ther mal Resistanc e Case-sink Ty p
Maximum Lead Tempe ra tur e F or S o ldering Purpos e

l

Avalanche Current, R epetitive or Not-Repetitive
(pulse width limited by T

Single Pul se Avalanc he Ener gy

AS

(starting T

=25oC, ID=IAR,VDD=25V)

j

max)

j

62.5

0.5

300

20 A

100 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 60 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Volta ge
Drain Curre nt (V

GS

Gat e- bod y Leakag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc= 125oC

V

DS

V

=± 20 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID= 250µA 234V
Sta t ic Drain-s our c e On

VGS=10V ID= 10 A 0.060 0.080

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

20 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=10 A 5 9 S

VDS=25V f=1MHz VGS= 0 900

125

35

µA
µA

Ω

pF
pF
pF

2/9

STP20NE06/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

Tur n-on Delay T ime
Rise Time

r

VDD=30V ID=10A
R

G

=4.7

Ω

VGS=10V

20
45

(see test circuit, figure 3)

Q
Q
Q

Tot al Gate Charge

g

Gat e- Source Charg e

gs

Gate-Drain Charge

gd

VDD=48V ID=20A VGS=10V 25

10

6

35 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off-v oltage Rise Time
Fall T ime

f

Cross-over T im e

c

VDD=48V ID=20A

=4.7 Ω VGS=10V

R

G

(see test circuit, figure 5)

8
25
37

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration= 300µs, duty cycle 1.5%
(•) Pulse width limited by safe operatingarea

Source-drain Current

(•)

Source-drain Current

20
80

(pulsed)

(∗)ForwardOnVoltage ISD=20A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 20 A di/dt = 100 A/µs

=30V Tj= 150oC

V

DD

(see test circuit, figure 5)

50

115
Charge
Reverse Recovery

4.5

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

nC

A

SafeOperating Area for TO-220 SafeOperating Area for TO-220FP

3/9

STP20NE06/FP

ThermalImpedancefor TO-220

OutputCharacteristics

ThermalImpedanceforTO-220FP

TransferCharacteristics

Transconductance

4/9

Static Drain-sourceOn Resistance

STP20NE06/FP

Gate Charge vs Gate-sourceVoltage

NormalizedGate ThresholdVoltage vs
Temperature

CapacitanceVariations

NormalizedOn Resistancevs Temperature

Source-drainDiode Forward Characteristics

5/9

STP20NE06/FP

Fig. 1:

UnclampedInductiveLoad Test Circuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductive Waveform

Fig. 4: Gate Chargetest Circuit

Fig. 5:

Test Circuit For InductiveLoad Switching

And Diode Recovery Times

6/9

TO-220 MECHANICAL DATA

STP20NE06/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

P011C

C

D1

L2

Dia.

L5

L7

L6

L9

7/9

STP20NE06/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

8/9

STP20NE06/FP

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