Datasheet STP20N20, STF20N20 Datasheet (STMicroelectronics)

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Page 1

STP20N20

STF20N20 - STD20N20

N-CHANNEL 200V - 0.10Ω - 18A TO-220/TO-220FP/DPAK

LOW GATE CHARGE STripFET™ II MOSFET

Table 1: Ge neral Features

TYPE V

STD20N20 STF20N20 STP20N20

■ TYPICAL R

■ EXCEPTIONAL dv/dt CAPABILITY

■ LOW GATE CHARGE

■ 100% AVALANCHE TESTED

DSS

200 V 200 V 200 V

(on) = 0.10 Ω

DS(on)

< 0.125 Ω < 0.125 Ω < 0.125 Ω

18 A 18 A 18 A

TOT

90 W 25 W 90 W

DESCRIPTION

This MOSFET series realized with STMicroelectronics unique S TripFET process has specifically been designed to minim ize i nput c apacitance a nd gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.

APPLICATIONS

■ HIGH CURRENT SWITCHING

APPLICATIONS

■ HIGH EFFICIENCY DC-DC CONVERTERS

■ PRIMARY SIDE SWITCH

Figure 1: Package

TO-220

TO-220FP

DPAK

Figure 2: Internal Schematic Diagram

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STD20N20T4 D20N20 DPAK TAPE & REEL

STF20N20 F20N20 TO-220FP TUBE STP20N20 P20N20 TO-220 TUBE

Rev. 3

1/13January 2005

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STP20N20 - STF20N20 - STD20N20

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

TO-220/DPAK TO-220FP

DGR

TOT

dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns

stg

() Pulse wi dt h l i m i ted by safe operating area (1) I

≤ 18A, di/dt ≤ 400A/µs, VDD ≤ V

Table 4: Thermal Data

Rthj-case Thermal Resistance Junction-case Max 1.38 1.38 5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50(#) 62.5 °C/W

(#) When mounted on 1inch² FR-4, 2 Oz copper board.

Drain-source Voltage (VGS = 0) 200 V Drain-gate Voltage (RGS = 20 kΩ)200V Gate- source Voltage

± 20 V Drain Current (continuous) at TC = 25°C18A Drain Current (continuous) at TC = 100°C11A

()

Drain Current (pulsed)

72 A Total Dissipation at TC = 25°C9025W Derating Factor 0.72 0.2 W/°C

Operating Junction Temperature Storage Temperature

(BR)DSS

-50 to 150 °C

TO-220 DPAK TO-220FP

Maximum Lead Temperature For Soldering

300 °C

Purpose

Table 5: Avalanche Characteristics

Symbol Parameter Max Value Unit

Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T

max)

Single Pulse Avalanche Energy (starting T

= 25 °C, ID = IAR, VDD = 50 V)

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

18 A

110 mJ

Table 6: On/Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(BR)DSS

DSS

GSS

GS(th)

DS(on)

Drain-source Breakdown Voltage

Zero Gate Voltage Drain Current (V

= 0)

Gate-body Leaka ge Current (V

= 0) Gate Threshold Voltage Static Drain-source On

Resistance

ID = 1 mA, VGS = 0 200 V

= Max Rating

= Max Rating, TC = 125 °C

= ± 20V ±100 nA

= VGS, ID = 250 µA 2 3 4 V

VGS = 10V, ID = 10 A 0.10 0.125 Ω

µA µA

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STP20N20 - STF20N20 - STD20N20

ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1)

C C

iss

oss

rss

d(on)

d(off)

Forward Transconductance Input Capacitance

Output Capacitance Reverse Transfer Capacitance

Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Total Gate Charge Gate-Source Charge Gate-Drain Charge

Table 8: Source Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(2)

SDM

VSD (1)

RRM

(1) Pulsed: Pulse durat ion = 300 µs, duty cycle 1.5 %. (2) Pulse width limite d by safe operatin g area.

Source-drain Current Source-drain Current (pulsed)

Forward On Voltage Reverse Recovery Time

Reverse Recovery Charge Reverse Recovery Current

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

VDS = 25 V, ID= 10 A 13 S

= 25V, f = 1 MHz, VGS = 0 940

197

= 100 V, ID = 10 A,

RG= 4.7 Ω VGS = 10 V (see Figure 17)

15 30 40 10

= 160V, ID = 20 A,

VGS = 10V (see Figure 20)

5.6

14.5

39 nC

18 72

ISD = 20 A, VGS = 0 1.6 V

= 20 A, di/dt = 100A/µs

VDD = 50V, Tj = 25°C (see Figure 18)

= 20 A, di/dt = 100A/µs

VDD = 50V, Tj = 150°C (see Figure 18)

155 775

183

1061

11.6

pF pF pF

ns ns ns ns

nC nC

A A

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STP20N20 - STF20N20 - STD20N20

Figure 3: Safe Operating Area For TO-220/ DPAK

Figure 4: Safe Operating Area For TO-220FP

Figure 6: Thermal Impedance For TO-220/ DPAK

Figure 7: Thermal Impedance For TO-220FP

Figure 5: Output Characteristics

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Figure 8: Transfer Characteristics

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STP20N20 - STF20N20 - STD20N20

Figure 9: Transconductance

Figure 10: Gate Charge vs Gate-source Voltage

Figure 12: Static Drain-source On Resistance

Figure 13: Capacitance Variations

Figure 11: Normalized Gate Threshold Voltage vs Tem perature

Figure 14: Normal ized On R esistance vs Temperature

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STP20N20 - STF20N20 - STD20N20

Figure 15: S ource-Drain Forward Char acteristics

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Figure 16: Unclamped Inductive Load Test Circuit

Figure 17: Switching Times Test Circuit For Resistive Load

Figure 19: Unclamped Inductive Wafeform

Figure 20: Gate Charge Test Circuit

Figure 18: Test Circuit For Inductive Load Switching and Diode Recovery Times

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TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027

D 15.25 15.75 0.60 0.620

E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STP20N20 - STF20N20 - STD20N20

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. i nch

123

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TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

10/13

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STP20N20 - STF20N20 - STD20N20

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

All dimensions

are in millimeters

REEL MECHANICAL DATA

DIM.

A 330 12. 992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

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Table 9: Revision History

Date R evisio n Descrip tion of Change s

06-Dec-2004 1 Data Brief 07-Dec-2004 2 First Revision

12-Jan-2005 3 Final datasheet

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is g ranted by implic ati o n or ot h er wis e und er an y pat ent or pa te nt r igh ts of STMi cr oe l ect ro ni cs . Sp ec if i cat i on s ment i o ned i n th is p ub li c ati on ar e s ubj ec t to change without notice. This public ation supersedes and replaces all information previously supplie d. STMicroelectronics pro ducts are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

All other names are the property of their respective owners

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Datasheet STP20N20, STF20N20 Datasheet (STMicroelectronics)

Specifications and Main Features

Frequently Asked Questions

User Manual

Table 1: Ge neral Features

Figure 1: Package

Figure 2: Internal Schematic Diagram

Table 2: Order Codes

Table 3: Absolute Maximum ratings

Table 4: Thermal Data

Table 5: Avalanche Characteristics

Table 6: On/Off

Table 8: Source Drain Diode

Figure 3: Safe Operating Area For TO-220/ DPAK

Figure 4: Safe Operating Area For TO-220FP

Figure 6: Thermal Impedance For TO-220/ DPAK

Figure 7: Thermal Impedance For TO-220FP

Figure 5: Output Characteristics

Figure 8: Transfer Characteristics

Figure 9: Transconductance

Figure 10: Gate Charge vs Gate-source Voltage

Figure 12: Static Drain-source On Resistance

Figure 13: Capacitance Variations

Figure 11: Normalized Gate Threshold Voltage vs Tem perature

Figure 17: Switching Times Test Circuit For Resistive Load

Figure 19: Unclamped Inductive Wafeform

Figure 20: Gate Charge Test Circuit

Figure 18: Test Circuit For Inductive Load Switching and Diode Recovery Times

Table 9: Revision History