Datasheet STP20N10LFI, STP20N10L Datasheet (SGS Thomson Microelectronics)

STP20N10L

STP20N10LFI

N - CHANNEL ENHANCEMENT MODE

LOW THRESHOLD POWER MOS TRANSISTOR

TYPE V

STP 20N10L
STP 20N10LFI

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

o

■ 175

■ LOGIC LEVEL COMPATIBLE INPUT

■ APPLICATION ORIENTED

C OPERATING TEMPERATURE

DS(on)

DSS

100 V
100 V

= 0.09 Ω

R

DS(on)

<0.12Ω
<0.12Ω

I

D

20 A
12 A

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

3

2

1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

STP 20N10L ST P20N10LF I

V

V

V

I

DM

P

V

T

(•) Pulsewidth limited bysafe operating area

November 1996

Drain - s ource Voltage (VGS=0) 100 V

DS

Drain- gate Voltage (RGS=20kΩ)100V

DGR

Gate-source Voltage ± 15 V

GS

Drain Current (continuous) at Tc=25oC2012A

I

D

Drain Current (continuous) at Tc=100oC14 8A

I

D

(•) Drain Current (pulsed) 80 80 A

Total Di ssipation at Tc=25oC 105 40 W

tot

Derat ing Factor 0.7 0.27 W/
Ins ulation Withs t and Voltage (DC)  2000 V

ISO

St or a ge Tem perature -65 to 175

stg

Max. Operating Junction Temperature 175

T

j

o
o

o

C

C
C

1/10

STP20N10L/FI

THERMAL DATA

TO-220 ISOW ATT 220

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e M ax 1.43 3.75
Thermal Resistance Junction- ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purpose

l

Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng T
Repetitive Avalanc he Energ y

AR

=25oC, ID=IAR,VDD=25V)

j

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive

(Tc= 100oC, pulse width limited by Tjmax, δ <1%)

62.5

0.5

300

20 A

120 mJ

30 mJ

14 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS= 0 100 V

Break d own Volta ge

I

DSS

I

GSS

Zer o Gate Volt age
Drain Current (VGS=0)

Gat e- body Leak age
Current (V

DS

=0)

VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC

= ± 15 V ± 10 0 nA

V

GS

1

10

ON (∗)

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA11.62.5V
St at ic Drain-s our ce O n

VGS=5V ID= 10 A 0.09 0.12 Ω

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

20 A

VGS=10V

DYNAMIC

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=10A 10 16 S

VDS=25V f=1MHz VGS= 0 1200

250

60

1500

350

90

µA
µA

pF
pF
pF

2/10

STP20N10L/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on T im e

t

Rise Time

r

Turn-on C urrent S lope VDD=80V ID=20A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=30V ID=10A
RG=50 Ω VGS=5V

50

14070200

(see test circuit, figure 3)

140 A/µs
RG=50 Ω VGS=5V
(see test circuit, figure 5)

VDD=80V ID=20A VGS=5V 22

6

12

VDD=80V ID=20A
RG=50 Ω VGS=5V
(see test circuit, figure 5)

80
80

160

30 nC

110
110
220

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

20
80

(pulsed)

V

(∗) Forward On Volt age ISD=20A VGS=0 1.5 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD= 20 A di/dt = 100 A/µs
VDD=50V Tj=150oC
(see test circuit, figure 5)

130

0.4

Charge

I

RRM

Reverse Recovery

6

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220

A
A

ns

µC

A

3/10

STP20N10L/FI

Thermal ImpedeanceFor TO-220

Derating Curve For TO-220

Thermal Impedance For ISOWATT220

Derating Curve For ISOWATT220

Output Characteristics

4/10

Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-sourceVoltage Capacitance Variations

STP20N10L/FI

Temperature

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs

5/10

STP20N10L/FI

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode ForwardCharacteristics

6/10

STP20N10L/FI

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 2: Unclamped Inductive Waveforms

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

7/10

STP20N10L/FI

TO-220 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

8/10

ISOWATT220 MECHANICAL DATA

STP20N10L/FI

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.4 0.7 0.015 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

Ø

F1

F

G1

H

G

F2

123

L2

L4

P011G

9/10

STP20N10L/FI

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such informationnor for any infringement of patents or other rightsof third parties which mayresults from its use. No
licenseis granted by implication orotherwise under any patent or patentrights ofSGS-THOMSONMicroelectronics. Specifications mentioned
in thispublication are subject tochangewithoutnotice. Thispublication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics products are not authorized for use as critical components in lifesupport devices or systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.

 1996 SGS-THOMSONMicroelectronics -Printedin Italy - All Rights Reserved

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