Datasheet STP20N10FI, STP20N10 Datasheet (SGS Thomson Microelectronics)

STP20N10

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

■ TYPICAL R

DS(on)

= 0.09 Ω

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

o

C

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ 175

o

C OPERATING TEMPERATURE

■ APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

TYPE V

DSS

R

DS(on)

I

D

STP 20N10 100 V < 0.12 Ω 20 A

1

2

3

TO-220

December 1996

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

V

DS

Drain - s ource Voltage (VGS= 0) 100 V

V

DGR

Drain- gate Voltage (RGS=20kΩ) 100 V

V

GS

Gate-source Voltage ± 20 V

I

D

Drain Current (continuous) at Tc=25oC20A

I

D

Drain Current (continuous) at Tc=100oC14A

I

DM

(•) Drain Current (pulsed) 80 A

P

tot

Total Di ssipation at Tc=25oC 105 W
Derat ing Factor 0.7 W/

o

C

T

stg

St or a ge Tem perature -65 to 175

o

C

T

j

Max. Operating Junction Temperature 175

o

C

(•) Pulsewidth limited bysafe operating area

1/9

THERMAL DATA

R

thj-case

R

thj-amb

R

thj-amb

T

l

Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e

1.43

62.5

0.5

300

o

C/W

o

C/W

o

C/W

o

C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Valu e Uni t

I

AR

Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)

20 A

E

AS

Single Pul se Avalanche Ener gy
(starti ng Tj=25oC, ID=IAR,VDD=25V)

60 mJ

E

AR

Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)

15 mJ

I

AR

Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)

14 A

ELECTRICAL CHARACTERISTICS (T

case

=25oC unless otherwise specified)

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource
Break d own Volta ge

ID=250µAVGS= 0 100 V

I

DSS

Zer o Gate Volt age
Drain Current (V

GS

=0)

V

DS

=MaxRating

V

DS

= Max Rating x 0 .8 Tc=125oC

1

10

µA
µA

I

GSS

Gat e- body Leak age
Current (VDS=0)

VGS= ± 20 V ± 100 nA

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th)

Gate Threshold Voltage VDS=VGSID=250µA22.94V

R

DS(on)

St at ic Drain-s our ce O n
Resistance

VGS=10V ID= 10 A 0.09 0.12 Ω

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

VGS=10V

20 A

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

g

fs

(∗)Forward

Tr ansconductance

VDS>I

D(on)xRDS(on)maxID

=10A 7 12 S

C

iss

C

oss

C

rss

Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance

VDS=25V f=1MHz VGS=0 800

200

40

1100

300

60

pF
pF
pF

STP20N10

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on T im e
Rise Time

VDD=30V ID=3A
RG=50 Ω VGS=10V
(see test circuit, figure 3)

25
75

35

110

ns
ns

(di/dt)

on

Turn-on C urrent S lope VDD=80V ID=20A

RG=50 Ω VGS=10V
(see test circuit, figure 5)

300 A/µs

Q

g

Q

gs

Q

gd

Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge

VDD=80V ID=20A VGS=10V 30

9

11

45 nC

nC
nC

SWITCHING OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off -voltage R ise Time
Fall Time
Cross-over Time

VDD=80V ID=20A
RG=50 Ω VGS=10V
(see test circuit, figure 5)

70
55

130

100

80

185

ns
ns
ns

SOURCE DRAIN DIODE

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

SD

I

SDM

(•)

Source-drain Current
Source-drain Current
(pulsed)

20
80

A
A

V

SD

(∗) Forward On Volt age ISD=20A VGS=0 1.6 V

t

rr

Q

rr

I

RRM

Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current

ISD= 20 A di/dt = 100 A/µs
VDD=20V Tj=150oC
(see test circuit, figure 5)

125

0.44
7

ns

µC

A

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas Thermal Impedance

STP20N10

3/9

Derating Curve

Transfer Characteristics

Static Drain-source On Resistance

Output Characteristics

Transconductance

Gate Charge vs Gate-source Voltage

STP20N10

4/9

Capacitance Variations Normalized Gate Threshold Voltage vs

Temperature

Normalized On Resistance vs Temperature Turn-on Current Slope

Cross-over TimeTurn-off Drain-source Voltage Slope

STP20N10

5/9

Switching SafeOperating Area Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

STP20N10

6/9

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

Fig. 3: Switching Times Test Circuits For
Resistive Load

STP20N10

7/9

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

L6

A

C

D

E

D1

F

G

L7

L2

Dia.

F1

L5

L4

H2

L9

F2

G1

TO-220 MECHANICAL DATA

P011C

STP20N10

8/9

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such informationnor for any infringement of patents or other rightsof third parties which mayresults fromits use. No
licenseis granted by implication orotherwise under any patentor patent rights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in thispublication are subject to change withoutnotice. Thispublication supersedes andreplacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics products are not authorizedfor use ascriticalcomponents in lifesupportdevicesor systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.

 1996 SGS-THOMSON Microelectronics -Printed in Italy- AllRightsReserved

SGS-THOMSONMicroelectronics GROUPOF COMPANIES

Australia- Brazil -Canada -China - France- Germany - HongKong- Italy - Japan- Korea- Malaysia - Malta- Morocco - The Netherlands -

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STP20N10

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