Datasheet STP16NK60Z, STB16NK60Z-S, STW16NK60Z Datasheet (STMicroelectronics)

STP16NK60Z - STB16NK60Z-S

STW16NK60Z

N-CHANNEL 600V - 0.38Ω -14ATO-220/I2SPAK / TO-247

Zener-Protected SuperMESH™ MOSFET

TYPE V

STP16NK60Z
STB16NK60Z-S
STW16NK60Z

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING

600 V
600 V
600 V

(on) = 0.38 Ω

DS

DSS

R

DS(on)

<0.42Ω
<0.42Ω
<0.42Ω

I

D

14 A
14 A
14 A

Pw

190 W
190 W
190 W

REPEATIBILITY

DESCRIPTION

The SuperME SH™ series is obtained t hrough an
extreme optimization of ST’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down,specialcareis tak­en to ensure a ver y good dv/dt capability for the
most dem anding applications. Such series comple­ments ST full range of high voltage MOSFETs in­cluding revolutionary MDm es h™ products.

3

2

1

TO-220

I2SPAK

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES

ORDER CODE

PART NUMBER MARKING PACKAGE PACKAGING

STP16NK60Z P16NK60Z TO-220 TUBE

STB16NK60Z-S B16NK60Z

STW16NK60Z W16NK60Z TO-247 TUBE

2

SPAK

I

TUBE

1/11March 2004

STP16NK60Z - STB16NK60Z -S - ST W 16N K 60Z

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

IDM()

P

TOT

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

T

j

T

stg

() Pulse width limited by safe operating area

≤ 14 A, di/dt ≤ 200 A/µs, VDD≤ V

(1) I

SD

(*) Limited only by maximum temperature allowed

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 0.66 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W

T

l

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

600 V

600 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC=25°C
Drain Current (continuous) at TC= 100°C

14 A

8.8 A
Drain Current (pulsed) 56 A
Total Dissipation at TC=25°C

190 W
Derating Factor 1.51 W/°C
Gate source ESD (HBM-C= 100pF, R= 1.5KΩ) 6000 V

Operating Junction Temperature
Storage Temperature

(BR)DSS,Tj

≤ T

JMAX.

-55 to 150 °C

TO-220/ I²SPAK TO-247

Maximum Lead Temperature For Soldering Purpose 300

°C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

=25°C, ID=IAR,VDD=50V)

j

14 A

360 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD c apability, but also to make t hem sa fely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zene r voltage is appropriate to achieve an ef fi cient and
cost-effective intervention to prote ct the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

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STP16NK60Z - STB16N K 60Z-S - STW16NK60Z

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=1mA,VGS= 0 600 V

Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

V

=MaxRating

DS

=MaxRating,TC= 125 °C

V

DS

V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 100 µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 7 A 0.38 0.42 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(1) Forward Transconductance VDS=15V,ID=7A 12 S

fs

C

oss eq.

C

C

C

t

d(on)

t

d(off)

Q
Q
Q

iss
oss
rss

t

r

t

f

gs

gd

g

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

Capacitance
Turn-on Delay Time

Rise Time
Turn-off Delay Time
Fall Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

=25V,f=1MHz,VGS= 0 2650

V

DS

285

62

VGS=0V,VDS= 0V to 480V 158 pF

=480V,ID=14A

V

DD

R

=4.7Ω VGS=10V

G

(Resistive Load see, Figure 3)

30
25
70
15

=480V,ID=14A,

V

DD

VGS=10V

86
17
46

µA
µA

pF
pF
pF

ns
ns
ns
ns

nC
nC
nC

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)

(1)

ForwardOnVoltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD=14A,VGS=0
I

SD

V

DD

(see test circuit, Figure 5)
I

SD

VDD=100V,Tj=150°C
(see test circuit, Figure 5)

=14A,di/dt=100A/µs

=100V,Tj=25°C

=14A,di/dt=100A/µs

490

5.4
22

585

7

24

when VDSincreases from 0 to 80%

oss

14
56

1.6 V

A
A

ns

µC

A

ns

µC

A

3/11

STP16NK60Z - STB16NK60Z -S - ST W 16N K 60Z

Thermal Impedance for TO-220/ I²SPAKSafe Operating Area for TO-220/I²SPAK

Safe Operating Area for TO-247

Thermal Impedance for TO-247

Transfer CharacteristicsOutput Characteristics

4/11

STP16NK60Z - STB16N K 60Z-S - STW16NK60Z

Transconductance

Gate Charge vs Gate-so urce Voltage

Static Drain-source On Resistance

Capacitance Variations

Normalized On Resistance vs Tem peratureNormalized Gate Theresho ld Voltage vs Temp.

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STP16NK60Z - STB16NK60Z -S - ST W 16N K 60Z

Source-drain Diode Forward Ch aracteristics

Maximum Avalanche Energy vs Temperature

Normalized BVDSS vs Temperature

6/11

STP16NK60Z - STB16N K 60Z-S - STW16NK60Z

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Di ode Recovery Times

Fig. 4: Gate Charge test Circuit

7/11

STP16NK60Z - STB16NK60Z -S - ST W 16N K 60Z

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STP16NK60Z - STB16N K 60Z-S - STW16NK60Z

I2SPAK MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106

B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.018 0.024
C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

E 10.00 10.40 0.394 0.409

G 4.88 5.28 0.192 0.208

L 16.7 17.5 0.657 0.689
L2 1.27 1.4 0.05 0.055
L3 13.82 14.42 0.544 0.568

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STP16NK60Z - STB16NK60Z -S - ST W 16N K 60Z

TO-247 MECHANICAL DATA

DIM.

A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102

b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134

c 0.40 0.80 0.015 0.03

D 19.85 20.15 0.781 0.793

E 15.45 15.75 0.608 0.620

e5.45 0.214

L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728

øP 3.55 3.65 0.140 0.143

øR 4.50 5.50 0.177 0.216

S5.50 0.216

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STP16NK60Z - STB16N K 60Z-S - STW16NK60Z

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