Datasheet STP16NF06L Datasheet (SGS Thomson Microelectronics)

STP16NF06L

STP16NF06LFP

N-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP

STripFET™ II POWER MOSFET

TYPE

STP16NF06L
STP60NF06LFP

■ TYPICAL R

■ EXCEPTIONA L dv/d t CAPABILITY

■ LOW GATE CHARGE AT 100

■ LOW THRESHOLD DRIVE

V

DSS

60 V
60 V

(on) = 0.07Ω

DS

R

DS(on)

<0.09
<0.09

o

I

D

16 A

Ω

11 A

Ω

C

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectron is unique "Single Feature Size™" str ip­based process . The res ulting tran sistor sho ws extrem ely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.

APPLICATIONS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ DC-DC & DC-AC CONVERTERS

■ AUTOMOTIVE ENVIRONMENT

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP16NF06 L STP16NF06LF P

V

DS

V

DGR

V

GS

I

D

I

D

(

I

DM

P

tot

dv/dt

E

AS

V

ISO

T

stg

T

j

(

Pulse width limited by safe operating area.

•)

(*) Curren t Lim i ted by package’s thermal resistance

.

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

60 V
60 V

Gate- source Voltage ± 16 V

Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

•)

Drain Current (pulsed) 64 44(*) A
Total Dissipation at TC = 25°C

16 11(*) A
11 7.5(*) A

45 25 W

Derating Factor 0.3 0.17 W/°C

(1)

Peak Diode Recovery voltage slope 23 V/ns

(2)

Single Pulse Avalanche Energy 127 mJ
Insulation Withstand Voltage (DC) -------- 2500 V
Storage Temperature
Operating Junction Temperature

(1) ISD ≤ 16A, di/dt ≤ 210A/µs , VDD ≤ V
(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V

-55 to 175 °C

(BR)DSS

, Tj ≤ T

JMAX.

1/9August 2002

STP16NF06L/FP

THERMA L D ATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 3.33 6 °C/W
Rthj-amb

T

ELECTRICAL CHARACTERISTICS (T

Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

l

= 25 °C unless otherwise specified)

case

Max 62.5

300

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source

= 250 µA, VGS = 0

D

60 V

Breakdown Voltage

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

V

= ± 16V

GS

1

10

±100 nA

ON

(1)

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

= VGS I

DS

= 5 V ID = 8 A

V

GS

V

= 10 V ID = 8 A

GS

= 250 µA

D

1V

0.08

0.07

0.10

0.09

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

> I

V
I

D

V

DS

=8 A

DS

x R

D(on)

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

17 S

345

72
29

°C/W

°C

µA
µA

Ω
Ω

pF
pF
pF

2/9

STP16NF06L/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 30 V ID = 8 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 4.5 V

G

(Resistive Load, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

= 48 V ID = 16 A VGS= 5V

V

DD

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 30 V ID = 8 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 4.5 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by safe operating area.

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

I

= 16 A VGS = 0

SD

= 16 A di/dt = 100A/µs

I

SD

V

= 16 V Tj = 150°C

DD

(see test circuit, Figure 5)

10
37

7.3

2.1

3.1

20

12.5

50

67.5

2.7

10 nC

16
64

1.3 V

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

Safe Operating Area for TO-220 Safe Operating Area for TO-220FP

3/9

STP16NF06L/FP

Thermal Impedance Thermal Impedance for TO-220FP

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

4/9

STP16NF06L/FP

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/9

STP16NF06L/FP

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

E

TO-220 MECHANICAL DATA

STP16NF06L/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106

H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

A

C

D

D1

L2

F1

L5

Dia.

G1

F

F2

L9

G

H2

L7

L6

L4

P011C

7/9

STP16NF06L/FP

TO-220FP MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

A

B

H

E

D

L3

L6

L7

¯

F1

F

G1

G

F2

123

L2

L4

8/9

STP16NF06L/FP

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