Datasheet STP16NF06FP, STP16NF06 Datasheet (SGS Thomson Microelectronics)

STP16NF06

STP16NF06FP

N-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FP

STripFET™ II POWER MOSFET

TYPE

STP16NF06
STP60NF06FP

■ TYPICAL R

■ EXCEPTIONA L dv/d t CAPABILITY

■ LOW GATE CHARGE AT 100

■ APPLICATION ORIENTED

V

DSS

60 V
60 V

(on) = 0.08Ω

DS

R

DS(on)

<0.1
<0.1

I

D

Ω
Ω

o

C

16 A
11 A

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest dev elo pment of

STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.

APPLICATIONS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ HIGH CURRENT, HIGH SWITCHING SPEED

■ SOLENOID AND RELAY DRIVERS

■ DC-DC & DC-AC CONVERTERS

■ AUTOMOTIVE ENVIRONMENT

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP16NF06 STP16NF06F P

V

DS

V

DGR

V

GS

I

D

I

D

(

I

DM

P

tot

dv/dt

E

AS

V

ISO

T

stg

T

j

(

Pulse width limited by safe operating area.

•)

(*) Curren t Lim i ted by package’s thermal resistance

.

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

60 V
60 V

Gate- source Voltage ± 20 V

Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

•)

Drain Current (pulsed) 64 44(*) A
Total Dissipation at TC = 25°C

16 11(*) A
11 7.5(*) A

45 25 W

Derating Factor 0.3 0.17 W/°C

(1)

Peak Diode Recovery voltage slope 20 V/ns

(2)

Single Pulse Avalanche Energy 130 mJ
Insulation Withstand Voltage (DC) -------- 2500 V
Storage Temperature
Operating Junction Temperature

(1) ISD ≤ 16A, di/dt ≤ 200A/µs , VDD ≤ V
(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V

-55 to 175 °C

(BR)DSS

, Tj ≤ T

JMAX.

1/9April 2002

STP16NF06/FP

THERMA L D ATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 3.33 6 °C/W

Rthj-amb

T

ELECTRICAL CHARACTERISTICS (T

Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

l

= 25 °C unless otherwise specified)

case

Max 62.5

300

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source

= 250 µA, VGS = 0

D

60 V

Breakdown Voltage

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

V

= ± 20 V

GS

1

10

±100 nA

ON

(*)

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

= VGS I

DS

V

= 10 V ID = 8 A

GS

= 250 µA

D

24V

0.08 0.1

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

V

= 15 V ID=8 A

DS

= 25V, f = 1 MHz, VGS = 0

V

DS

6.5 S

315

70
30

°C/W

°C

µA
µA

Ω

pF
pF
pF

2/9

STP16NF06/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 30 V ID = 8 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

= 48V ID = 16A VGS= 10V

V

DD

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 30 V ID = 8 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 10 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by safe operating area.

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

I

= 16 A VGS = 0

SD

= 16 A di/dt = 100A/µs

I

SD

V

= 30 V Tj = 150°C

DD

(see test circuit, Figure 5)

7

18

10

3.5

3.5

17

6

50
88

3.5

13 nC

16
64

1.3 V

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

3/9

STP16NF06/FP

Thermal Impedance Thermal Impedance for TO-220FP

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

4/9

STP16NF06/FP

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature

5/9

STP16NF06/FP

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

E

TO-220 MECHANICAL DATA

STP16NF06/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106

H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

A

C

D

D1

L2

F1

L5

Dia.

G1

F

F2

L9

G

H2

L7

L6

L4

P011C

7/9

STP16NF06/FP

TO-220FP MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

A

B

H

E

D

L3

L6

L7

¯

F1

F

G1

G

F2

123

L2

L4

8/9

STP16NF06/FP

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