Datasheet STP16NF06 Specification

N-channel 60V - 0.08Ω - 16A - TO-220/TO-220FP

3

General features

Typ e V

STP16NF06 60V <0.1Ω 16A

STP16NF06FP 60V <0.1Ω 11A

■ Exceptional dv/dt capability

■ Low gate charge at 100°C

■ Application oriented characterization

DSS

Description

This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

R

DS(on)

I

D

STP16NF06

STP16NF06FP

STripFET™ II Power MOSFET

3

2

1

TO-220

TO-220FP

Internal schematic diagram

2

1

Applications

■ Switching application

Order codes

Part number Marking Package Packaging

STP16NF06 P16NF06 TO-220 Tube

STP16NF06FP P16NF06 TO-220FP Tube

February 2007 Rev 8 1/14

www.st.com

14

Contents STP16NF06 - STP16NF06FP

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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STP16NF06 - STP16NF06FP Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

TO-220 TO-220FP

I

V

V

DM

P

I

I

DS

GS

D

D

(2)

tot

Drain-source voltage (VGS = 0) 60 V

Gate- source voltage ± 20 V

Drain current (continuous) at TC = 25°C 16 11

Drain current (continuous) at TC = 100°C 11 7.5

Drain current (pulsed) 64 44

Total dissipation at TC = 25°C 45 25 W

Derating factor 0.3 0.17 W/°C

(3)

dv/dt

E

AS

I

AR

V

ISO

T

stg

T

j

1. Current limited by package’s thermal resistance

2. Pulse width limited by safe operating area.

3. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD ≤ V

4. Starting Tj = 25 °C, ID = 8A, VDD = 30V

Peak diode recovery voltage slope 20 V/ns

(4)

Single pulse avalanche energy 130 mJ

Avalanche current, repetitive or not­repetitive

Insulation withstand voltage (DC) -- 2500 V

Storage temperature

Max. operating junction temperature

, Tj ≤ T

(BR)DSS

JMAX

(1)

(1)

(1)

A

A

A

16 A

-55 to 175 °C

Table 2. Thermal data

TO-220 TO-220FP

Rthj-case Thermal resistance junction-case max 3.33 6 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W

T

Maximum lead temperature for soldering purpose 300 °C

J

3/14

Electrical characteristics STP16NF06 - STP16NF06FP

2 Electrical characteristics

(T

=25°C unless otherwise specified)

CASE

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
breakdown voltage

Zero gate voltage
drain current (V

GS

Gate-body leakage
current (V

DS

= 0)

= 0)

ID = 250µA, VGS =0 60 V

V

= max ratings

DS

VDS = max ratings,

= 125°C

T

C

1

10

VGS = ± 20V ±100 nA

Gate threshold voltage VDS = VGS, ID = 250µA 2 4 V

Static drain-source on
resistance

V

= 10V, ID = 8A 0.08 0.1 Ω

GS

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Forward

(1)

g

fs

C
C

oss

C

t

d(on)

t

t

d(off)

t

Q

Q

Q

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

transconductance

Input capacitance

iss

Output capacitance
Reverse transfer

rss

capacitance

Turn-on delay time
Rise time

r

Turn-off delay time
Fall time

f

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

= 15V, ID=8A 6.5 S

V

DS

= 25V, f = 1MHz,

V

DS

= 0

V

GS

= 30V, ID = 8A

V

DD

RG=4.7Ω VGS = 10V
(see Figure 15)

VDD = 48V, ID = 16A,
VGS = 10V
(see Figure 16)

315

70
30

7
18
17

6

10

3.5

3.5

13 nC

µA
µA

pF
pF
pF

ns
ns
ns
ns

nC
nC

4/14

STP16NF06 - STP16NF06FP Electrical characteristics

Table 5. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Source-drain current
Source-drain current

(1)

(pulsed)

(2)

Forward on voltage ISD = 16A, VGS = 0 1.3 V

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

ISD = 15A,
di/dt = 100A/µs,

= 30V, Tj = 150°C

V

DD

(see Figure 17)

50
88

3.5

16
64

A
A

ns

nC

A

5/14

Electrical characteristics STP16NF06 - STP16NF06FP

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220

Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP

Figure 5. Output characteristics Figure 6. Transfer characteristics

6/14

STP16NF06 - STP16NF06FP Electrical characteristics

Figure 7. Transconductance Figure 8. Static drain-source on resistance

Figure 9. Gate charge vs. gate-source voltage Figure 10. Capacitance variations

Figure 11. Normalized gate threshold voltage

vs. temperature

Figure 12. Normalized on resistance vs.

temperature

7/14

Electrical characteristics STP16NF06 - STP16NF06FP

Figure 13. Source-drain diode forward

characteristics

Figure 14. Normalized B

vs. temperature

VDSS

8/14

STP16NF06 - STP16NF06FP Test circuit

3 Test circuit

Figure 15. Switching times test circuit for

resistive load

Figure 17. Test circuit for inductive load

switching and diode recovery times

Figure 16. Gate charge test circuit

Figure 18. Unclamped Inductive load test

circuit

Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

9/14

Package mechanical data STP16NF06 - STP16NF06FP

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

10/14

STP16NF06 - STP16NF06FP Package mechanical data

L2

A

B

D

E

H

G

L6

F

L3

G1

123

F2

F1

L7

L4

L5

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.1 08

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039

F1 1.15 1.7 0.045 0.067

F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409

L2 16 0.630

L3 28.6 30.6 1.126 1.2 04

L4 9. 8 10.6 .0385 0.417

L5 2. 9 3.6 0.114 0.141

L6 15.9 16.4 0.626 0.6 45

L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

TO-220FP MECHANICAL DATA

11/14

Package mechanical data STP16NF06 - STP16NF06FP

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181

b 0.61 0.88 0. 024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027

D 15.25 15 .75 0.60 0.620

E 10 10.40 0.393 0 .409

e 2.40 2.70 0. 094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154

L20 16.40 0.645

L30 28.90 1.137

øP

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

3.75 3.85 0.147 0.151

mm. inch

12/14

STP16NF06 - STP16NF06FP Revision history

5 Revision history

Table 6. Revision history

Date Revision Changes

09-Sep-2004 4 Preliminary version

28-Jun-2005 5 Complete version

21-Jul-2005 6 ECOPACK label inserted

09-Aug-2006 7 New template, no content change

20-Feb-2007 8 Typo mistake on page 1

13/14

STP16NF06 - STP16NF06FP

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