Datasheet STP16NE06FP, STP16NE06 Datasheet (SGS Thomson Microelectronics)

STP16NE06

®

N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP

TYPE V

STP16NE06
STP16NE06FP

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

o

■ 175

■ HIGH dV/dt CAP A BI LIT Y

■ APPLI CATION ORIENT ED

C OPERATING TEMPERATURE

DS(on)

DSS

60 V
60 V

= 0.08 Ω

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark­able manufacturing reproducibility.

R

DS(on)

< 0.100 Ω
< 0.100 Ω

I

D

16 A
11 A

STP16NE06FP

STripFET POWER MOSFET

PRELIMINARY DATA

3

2

1

TO-220 TO-220FP

INTER NAL SCH E M ATI C DIAG RA M

3

2

1

APPLICATIONS

■ DC MOTOR CONTROL

■ DC-DC & DC-AC CONVERT E RS

■ SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP16NE06 STP16NE06FP

V

V

V

I

DM

P

V

dV/dt Peak Diode Recovery voltage slope 6 V/ns

T

(•) Pulse width limited by safe operating area (1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V

New RDS (on) spec. starting from JULY 98

’

June 1998

Drain-source Voltage (VGS = 0) 60 V

DS

Drain- gate Voltage (RGS = 20 kΩ)

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc = 25 oC1611A

I

D

I

Drain Current (continuous) at Tc = 100 oC107A

D

60 V

(•) Drain Current (pulsed) 64 64 A

Total Dissipation at Tc = 25 oC6030W

tot

Derating Factor 0.4 0.2 W/
Insulation Withstand Voltage (DC)  2000 V

ISO

Storage Temperature -65 to 175

stg

Max. Operating Junction Temperature 175

T

j

, Tj ≤ T

(BR)DSS

JMAX

o

C

o

C

o

C

1/9

STP16NE06/FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERI S TICS

Symbol Parameter Max Value Unit

I

AR

E

Thermal Resistance Junction-case Max 2.5 5
Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

= 25 oC, ID = IAR, V

j

ma x)

j

DD

= 25 V)

62.5

0.5

300

16 A

80 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

I

= 250 µA V

D

GS

= 0

60 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

= Max Rating

V

DS

V

= Max Rating Tc = 125

DS

o

C

V

= ± 20 V

GS

1

10

± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

= VGS ID = 250 µA

DS

234V

Voltage

R

DS(on)

Static Drain-source On

VGS = 10V ID = 8 A 0.080 0.100 Ω

Resistance

I

D(on)

On State Drain Current VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

16 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗) Forward

fs

Transconductance

C

C

C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS > I

V

DS

x R

D(on)

DS(on)max

= 25 V f = 1 MHz V

ID =8 A 6 S

30

1000

140

45

= 0 760

GS

100

µA
µA

pF
pF
pF

2/9

STP16NE06/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING O N

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

Q
Q
Q

SWITCHING O F F

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

SOURCE DRAIN DIO DE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

Turn-on Time
Rise Time

r

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Off-voltage Rise Time
Fall Time

t

f

Cross-over Time

c

Source-drain Current

(•)

Source-drain Current

V

= 30 V ID = 8 A

DD

R

=4.7 W VGS = 10 V

G

VDD = 40 V ID = 16 A V

V

= 48 V ID = 16 A

DD

=4.7 Ω VGS = 10 V

R

G

= 10 V 20

GS

10
35

5
7

7
18
30

80
40

30 nC

10
25
45

16
64

(pulsed)

(∗) Forward On Voltage ISD = 16 A VGS = 0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

I

= 16 A di/dt = 100 A/µs

SD

V

= 30 V Tj = 150 oC

DD

70

0.21
Charge
Reverse Recovery

6

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µC

A

Safe Operating Area for TO-220 Safe Operating Are a for TO-220FP

3/9

STP16NE06/FP

Thermal Impedance for TO-2 20

Output Characteris tics

Thermal Impedance for TO-220FP

Transfer Characteris tic s

Transconductance

4/9

Static Drain-source On Resist a nce

STP16NE06/FP

Gate Charge vs Gate-source Voltage

Normalized Gate Threshold Voltage vs
Temperature

Capacitance Variations

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteris tic s

5/9

STP16NE06/FP

Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Tim es Test Circ uits For

Resistive Load

Fig . 2 : Unclamped Inductive Waveform

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

6/9

E

TO-220 MECHANICAL DATA

STP16NE06/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

A

C

D

D1

L2

F1

L5

Dia.

G1

F

F2

L9

G

H2

L7

L6

L4

P011C

7/9

STP16NE06/FP

TO-220FP MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

A

B

H

E

D

L3

L6

L7

¯

F1

F

G1

G

F2

123

L2

L4

8/9

STP16NE06/FP

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