Datasheet STP14NF12FP, STP14NF12 Datasheet (SGS Thomson Microelectronics)

STP14NF12

STP14NF12FP

N-CHANNEL 120V - 0.16Ω - 14A TO-220/TO-220FP

LOW GATE CHARGE STripFET™ POWER MOSFET

TYPE V

STP14NF12
STP14NF12FP

■ TYPICAL R

■ EXCEPTIONAL dv/dt CAPABILITY

■ APPLICATION ORIENTED

DS

DSS

120 V
120 V

(on) = 0.16Ω

R

DS(on)

< 0.18 Ω
< 0.18 Ω

I

D

14 A
14 A

CHARACTERIZATION

DESCRIPTION

This Power MOSFET series realized with STMicro­electronics uniqueSTripFET process has specifical­ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements

APPLICATIONS

■ HIGH-EFFICIENCY DC-DC CONVERTERS

■ UPS AND MOTOR CONTRO L

3

TO-220

2

1

TO-220FP

1

INTERNAL SCHEMATIC DIAGRAM

3

2

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP14NF12 STP14NF12FP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 9 V/ns

E

AS

V

ISO

T

j

T

stg

(●) Pulse width limited by safe operating area

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±20 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 56 34 A
Total Dissipation at TC= 25°C
Derating Factor 0.4 0.17 W/°C

(2)

Single Pulse Avalanche Energy 60 mJ
Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature
Storage Temperature

(1) ISD≤14A, di/dt ≤300A/µs, VDD≤ V
(2) Starting Tj= 25°C, ID= 14A, VDD=50V

14 8.5 A

60 25 W

120 V
120 V

96A

-55 to 175 °C

(BR)DSS,Tj≤TJMAX.

1/9August 2002

STP14NF12/STP14NF12FP

THERMAL DATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 2.5 6 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose 300 °C

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID= 250 µA, VGS= 0 120 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

=0)

=0)

V

= Max Rating

DS

= Max Rating, TC= 125 °C

V

DS

V

= ±20V ±100 nA

GS

1µA

10 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

DS=VGS,ID

VGS=10V,ID=7A

= 250µA

234V

0.16 0.18 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=15V,ID=7A 4 S

g

fs

V

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 70 pF
Reverse Transfer

Capacitance

=25V,f=1MHz,VGS=0

DS

460 pF

30 pF

2/9

STP14NF12/STP14NF12FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 25 ns
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off-Delay Time
Fall Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 14 A

(2)

Source-drain Current (pulsed) 56 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

=50V,ID=7A

DD

= 4.7Ω VGS=10V

R

G

(Resistive Load, see Figure 3)
VDD=80V,ID=14A,

V

=10V

GS

VDD=50V,ID=7A,

=4.7Ω, VGS= 10V

R

G

(Resistive Load, see Figure 3)

ISD=14A,VGS=0

= 14 A, di/dt = 100A/µs,

I

SD

VDD=50V,Tj= 150°C
(see test circuit, Figure 5)

16 ns

15.5

21 nC

3.7

4.7

32

8

1.5 V

92

230

5

nC
nC

ns
ns

ns

nC

A

Safe Operating Area For TO-220

Safe Operating Area For TO-220FP

3/9

STP14NF12/STP14NF12FP

Thermal Impedance For TO-220

Output Characteristics

Thermal Impedance For TO-220F P

Transfer Characteristics

Transconductance

4/9

Static Drain-source O n Resistance

STP14NF12/STP14NF12FP

Capacitance VariationsGate Charge vs Gate-so urce Voltage

Normalized Gate Threshold Voltage vs Temp.

Source-drain Diode Forward Characteristics

Normalized On Resistance vs Temperature

Normalized BVDSS vs Temperature

5/9

STP14NF12/STP14NF12FP

Fig. 2: Unclamped In duc tive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Tes t Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

TO-220 MECHANICAL DATA

STP14NF12/STP14NF12FP

DIM.

A 4.40 4.60
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066

G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.40 0.645
L3 28.90 1.137
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154

DIA 3.75 3.85 0.147 0.151

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

0.173

0.181

1

7/9

STP14NF12/STP14NF12FP

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP M AX. MIN. TYP. MAX.

mm. inch

8/9

E

A

D

B

L3

L6

L7

F1

F

G1

H

G

F2

123

L2

L5

L4

STP14NF12/STP14NF12FP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or the
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its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as c ritical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.

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