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查询STB12NM50供应商
STP12NM50 - STP12NM50FP
STB12NM50 - STB12NM50-1
N-CHANNEL 550V @ Tj
-0.30Ω - 12A TO-220/FP/D²/I²PAK
max
Zener-Protected SuperMESH™MOSFET
Table 1: Ge neral Features
TYPE V
STB12NM50
STB12NM50-1
STP12NM50
STP12NM50FP
■ TYPICAL R
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ LOW INPUT CAPACITANCE AND GATE
(on) = 0.30 Ω
DS
CHARGE
■ 100% AVALANCHE TESTED
■ LOW GATE INPUT RESISTAN CE
■ TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™
is a new revolutionary MOSF ET
technology that asso ciates the Mul tiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Com pany’s proprietary strip technique yields overall dynamic p erformance that is
significantly better than that of similar competition’s products.
(@Tj
550 V
550 V
550 V
550 V
DSS
max
)
R
DS(on)
< 0.35 Ω
< 0.35 Ω
< 0.35 Ω
< 0.35 Ω
I
D
12 A
12 A
12 A
12 A
Figure 1: Package
3
2
TO-220
1
3
1
TO-220FP
I2PAKD2PAK
Figure 2: Internal Schematic Diagram
3
2
1
3
2
1
APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE MARKING PACKAGE PACKAGING
STB12NM50T4 B12NM50 D²PAK TAPE & REEL
STB12NM50-1 B12NM50 I²PAK TUBE
STP12NM50 P12NM50 TO-220 TUBE
STP12NM50FP P12NM50FP TO-220FP TUBE
Rev. 2
1/14March 2005
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STP12NM50 - STP12NM50FP - STB12NM 50 - STB12NM50-1
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
STB12NM50
STB12NM50
STP12NM50
I
V
DM
P
GS
I
D
I
D
TOT
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
()
Drain Current (pulsed) 48 48 (*) A
Total Dissipation at TC = 25°C
12 12 (*) A
7.5 7.5 (*) A
160 35 W
Derating Factor 1.28 0.28 W/°C
V
ISO
Insulation Winthstand Voltage (DC) -- 2500 V
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
T
j
T
stg
() Pulse width limited by saf e operating ar ea
(1) I
≤12A, di/dt ≤400A/µs, VDD ≤ V
SD
(*) Limited only by maximum temperature allowed
Operating Junction Temperature
Storage Temperature
, Tj ≤ T
(BR)DSS
JMAX.
-65 to 150
-65 to 150
Table 4: Thermal Data
TO-220/ D²PAK /
I²PAK
Rthj-case Thermal Resistance Junction-case Max 0.78 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
STP12NM50FP
TO-220FP
300 °C
°C
°C
Table 5: Avalanche Characteristics
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
6A
400 mJ
Table 6: On /Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on
Drain-source Breakdown
Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID = 250 µA, VGS = 0 500 V
V
= Max Rating
DS
V
= Max Rating, TC = 125°C
DS
V
= ± 30 V ± 100 nA
GS
V
= VGS, ID = 50 µA 3
DS
4
1
10
5V
VGS = 10 V, ID = 6 A 0.30 0.35 Ω
µA
µA
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STP12NM50 - STP12NM50FP - ST B12NM50 - STB12NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 15 V , ID = 6 A 5.5 S
g
fs
C
iss
C
oss
C
rss
C
OSS eq
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Rg Gate Input Resis tance f = 1MHz Gate DC Bias = 0
Table 8: Source Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
(1) Pulsed: Pulse durat i on = 300 µs, du t y cy cle 1.5 %.
(2) Pulse width limite d by safe operating area.
(3) C
oss eq.
Input Capacitance
= 25 V, f = 1 MHz, VGS = 0 1000
V
DS
Output Capacitance
Reverse Transfer
Capacitance
(3).Equivalent Outpu t
VGS = 0 V, VDS = 0 to 400 V 90 pF
Capacitance
Turn-on Delay Time
Rise Time
VDD = 250 V, ID = 6 A,
RG = 4.7 Ω, V
GS
= 10 V
(see Figure 17)
= 400 V, ID = 12 A,
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
V
= 10 V
GS
(see Figure 20)
Test Signal Level = 20mV
Open Drain
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
ISD = 12 A, VGS = 0
= 12 A, di/dt = 100 A/µs
I
SD
VDD = 100V
(see Figure 18)
= 12 A, di/dt = 100 A/µs
I
SD
VDD = 100V, Tj = 150°C
(see Figure 18)
180
25
20
10
28
39 nC
8
18
1.6 Ω
12
48
1.5 V
270
2.23
16.5
340
3
18
when VDS increase s from 0 to 80% V
oss
pF
pF
pF
ns
ns
nC
nC
A
A
ns
µC
A
ns
µC
A
DSS
.
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STP12NM50 - STP12NM50FP - STB12NM 50 - STB12NM50-1
Figure 3: Safe Operating Area For TO-220/
D²PAK/I²PAK
Figure 4: Safe Operating Area For TO-220FP
Figure 6: Thermal Impedance TO-220/D²PAK/
I²PAK
Figure 7: Thermal Impedance For TO-220FP
Figure 5: Output Characteristics
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Figure 8: Transfer Characteristics
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STP12NM50 - STP12NM50FP - ST B12NM50 - STB12NM50-1
Figure 9: Transconductance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 12: Static Drain-Source On Resis tance
Figure 13: Capacitance Variations
Figure 11: Normalized Gate Threshold Voltage
vs Tem pera ture
Figure 14: Normal ized On R esistance vs Temperature
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STP12NM50 - STP12NM50FP - STB12NM 50 - STB12NM50-1
Figure 15: S ource-Drain Forward Char acteristics
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STP12NM50 - STP12NM50FP - ST B12NM50 - STB12NM50-1
Figure 16: Unclamped Inductive Load Test Circuit
Figure 17: Switching Times Test Circuit For
Resistive Load
Figure 19: Unclamped Inductive Wafeform
Figure 20: Gate Charge Test Circuit
Figure 18: Test Circuit For Inductive Load
Switching and Diode Recovery Times
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STP12NM50 - STP12NM50FP - STB12NM 50 - STB12NM50-1
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
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STP12NM50 - STP12NM50FP - ST B12NM50 - STB12NM50-1
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
1
F
H
L2
L5
F
1
G
G
2
F
123
L4
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STP12NM50 - STP12NM50FP - STB12NM 50 - STB12NM50-1
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R0.4 0.015
V2 0º 4º
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
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1
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STP12NM50 - STP12NM50FP - ST B12NM50 - STB12NM50-1
TO-262 (I2PAK) MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
A1 2.40 2.72 0.094 0.107
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.49 0.70 0.019 0.027
c2 1.23 1.32 0.048 0.052
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
E 10 10.40 0.393 0.410
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
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STP12NM50 - STP12NM50FP - STB12NM 50 - STB12NM50-1
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
T APE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
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STP12NM50 - STP12NM50FP - ST B12NM50 - STB12NM50-1
Table 9: Revision History
Date Revision Description of Change s
27-Sep-2004 1 Complete version
09-Mar-2005 2 New Stylesheet
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STP12NM50 - STP12NM50FP - STB12NM 50 - STB12NM50-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ati o n or ot h er wis e und er an y pat ent or pa te nt r igh ts of STMi cr oe l ect ro ni cs . Sp ec if i cat i on s ment i o ned i n th is p ub li c ati on ar e s ubj ec t
to change without notice. This publication supersedes and replaces all information previously s upplied. STMi croelectronics product s are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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