Datasheet STP12NM50, STP12NM50FP, STB12NM50, STB12NM50-1 Datasheet (ST)

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STP12NM50 - STP12NM50FP

STB12NM50 - STB12NM50-1

N-CHANNEL 550V @ Tj

-0.30Ω - 12A TO-220/FP/D²/I²PAK

max

Zener-Protected SuperMESH™MOSFET

Table 1: Ge neral Features

TYPE V

STB12NM50
STB12NM50-1
STP12NM50
STP12NM50FP

■ TYPICAL R

■ HIGH dv/dt AND AVALANCHE CAPABILITIES

■ LOW INPUT CAPACITANCE AND GATE

(on) = 0.30 Ω

DS

CHARGE

■ 100% AVALANCHE TESTED

■ LOW GATE INPUT RESISTAN CE

■ TIGHT PROCESS CONTROL AND HIGH

MANUFACTURING YIELDS

DESCRIPTION

The MDmesh™

is a new revolutionary MOSF ET

technology that asso ciates the Mul tiple Drain pro­cess with the Company’s PowerMESH™ horizon­tal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Com pany’s proprietary strip tech­nique yields overall dynamic p erformance that is
significantly better than that of similar competi­tion’s products.

(@Tj

550 V
550 V
550 V
550 V

DSS

max

)

R

DS(on)

< 0.35 Ω
< 0.35 Ω
< 0.35 Ω
< 0.35 Ω

I

D

12 A
12 A
12 A
12 A

Figure 1: Package

3

2

TO-220

1

3

1

TO-220FP

I2PAKD2PAK

Figure 2: Internal Schematic Diagram

3

2

1

3

2

1

APPLICATIONS

The MDmesh™ family is very suitable for increas­ing power density of high voltage converters allow­ing system miniaturization and higher efficiencies.

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STB12NM50T4 B12NM50 D²PAK TAPE & REEL

STB12NM50-1 B12NM50 I²PAK TUBE

STP12NM50 P12NM50 TO-220 TUBE

STP12NM50FP P12NM50FP TO-220FP TUBE

Rev. 2

1/14March 2005

STP12NM50 - STP12NM50FP - STB12NM 50 - STB12NM50-1

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

STB12NM50
STB12NM50
STP12NM50

I

V

DM

P

GS

I

D

I

D

TOT

Gate- source Voltage ± 30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

()

Drain Current (pulsed) 48 48 (*) A
Total Dissipation at TC = 25°C

12 12 (*) A

7.5 7.5 (*) A

160 35 W

Derating Factor 1.28 0.28 W/°C

V

ISO

Insulation Winthstand Voltage (DC) -- 2500 V

dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns

T

j

T

stg

() Pulse width limited by saf e operating ar ea
(1) I

≤12A, di/dt ≤400A/µs, VDD ≤ V

SD

(*) Limited only by maximum temperature allowed

Operating Junction Temperature
Storage Temperature

, Tj ≤ T

(BR)DSS

JMAX.

-65 to 150

-65 to 150

Table 4: Thermal Data

TO-220/ D²PAK /

I²PAK

Rthj-case Thermal Resistance Junction-case Max 0.78 3.57 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

STP12NM50FP

TO-220FP

300 °C

°C
°C

Table 5: Avalanche Characteristics

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID = IAR, VDD = 50 V)

j

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

6A

400 mJ

Table 6: On /Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on

Drain-source Breakdown
Voltage

Zero Gate Voltage
Drain Current (V

GS

= 0)

Gate-body Leakage
Current (V

DS

= 0)
Gate Threshold Voltage
Static Drain-source On

Resistance

ID = 250 µA, VGS = 0 500 V

V

= Max Rating

DS

V

= Max Rating, TC = 125°C

DS

V

= ± 30 V ± 100 nA

GS

V

= VGS, ID = 50 µA 3

DS

4

1

10

5V

VGS = 10 V, ID = 6 A 0.30 0.35 Ω

µA
µA

2/14

STP12NM50 - STP12NM50FP - ST B12NM50 - STB12NM50-1

ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS = 15 V , ID = 6 A 5.5 S

g

fs

C

iss

C

oss

C

rss

C

OSS eq

t

d(on)

t

r

Q

g

Q

gs

Q

gd

Rg Gate Input Resis tance f = 1MHz Gate DC Bias = 0

Table 8: Source Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

(1) Pulsed: Pulse durat i on = 300 µs, du t y cy cle 1.5 %.
(2) Pulse width limite d by safe operating area.
(3) C

oss eq.

Input Capacitance

= 25 V, f = 1 MHz, VGS = 0 1000

V

DS

Output Capacitance
Reverse Transfer
Capacitance

(3).Equivalent Outpu t

VGS = 0 V, VDS = 0 to 400 V 90 pF

Capacitance
Turn-on Delay Time

Rise Time

VDD = 250 V, ID = 6 A,
RG = 4.7 Ω, V

GS

= 10 V

(see Figure 17)

= 400 V, ID = 12 A,

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

V

DD

V

= 10 V

GS

(see Figure 20)

Test Signal Level = 20mV
Open Drain

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

ISD = 12 A, VGS = 0

= 12 A, di/dt = 100 A/µs

I

SD

VDD = 100V
(see Figure 18)

= 12 A, di/dt = 100 A/µs

I

SD

VDD = 100V, Tj = 150°C
(see Figure 18)

180

25

20
10

28

39 nC

8

18

1.6 Ω

12
48

1.5 V

270

2.23

16.5
340

3

18

when VDS increase s from 0 to 80% V

oss

pF
pF
pF

ns
ns

nC
nC

A
A

ns

µC

A

ns

µC

A

DSS

.

3/14

STP12NM50 - STP12NM50FP - STB12NM 50 - STB12NM50-1

Figure 3: Safe Operating Area For TO-220/
D²PAK/I²PAK

Figure 4: Safe Operating Area For TO-220FP

Figure 6: Thermal Impedance TO-220/D²PAK/
I²PAK

Figure 7: Thermal Impedance For TO-220FP

Figure 5: Output Characteristics

4/14

Figure 8: Transfer Characteristics

STP12NM50 - STP12NM50FP - ST B12NM50 - STB12NM50-1

Figure 9: Transconductance

Figure 10: Gate Charge vs Gate-source Voltage

Figure 12: Static Drain-Source On Resis tance

Figure 13: Capacitance Variations

Figure 11: Normalized Gate Threshold Voltage
vs Tem pera ture

Figure 14: Normal ized On R esistance vs Tem­perature

5/14

STP12NM50 - STP12NM50FP - STB12NM 50 - STB12NM50-1

Figure 15: S ource-Drain Forward Char acteris­tics

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STP12NM50 - STP12NM50FP - ST B12NM50 - STB12NM50-1

Figure 16: Unclamped Inductive Load Test Cir­cuit

Figure 17: Switching Times Test Circuit For
Resistive Load

Figure 19: Unclamped Inductive Wafeform

Figure 20: Gate Charge Test Circuit

Figure 18: Test Circuit For Inductive Load
Switching and Diode Recovery Times

7/14

STP12NM50 - STP12NM50FP - STB12NM 50 - STB12NM50-1

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181

b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052

H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STP12NM50 - STP12NM50FP - ST B12NM50 - STB12NM50-1

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

1
F

H

L2

L5

F

1
G

G

2
F

123

L4

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STP12NM50 - STP12NM50FP - STB12NM 50 - STB12NM50-1

D2PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126
R0.4 0.015

V2 0º 4º

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

10/14

3

1

STP12NM50 - STP12NM50FP - ST B12NM50 - STB12NM50-1

TO-262 (I2PAK) MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181

A1 2.40 2.72 0.094 0.107

b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c 0.49 0.70 0.019 0.027

c2 1.23 1.32 0.048 0.052

D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

E 10 10.40 0.393 0.410

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

11/14

STP12NM50 - STP12NM50FP - STB12NM 50 - STB12NM50-1

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937

T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

T APE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

12/14

STP12NM50 - STP12NM50FP - ST B12NM50 - STB12NM50-1

Table 9: Revision History

Date Revision Description of Change s

27-Sep-2004 1 Complete version
09-Mar-2005 2 New Stylesheet

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STP12NM50 - STP12NM50FP - STB12NM 50 - STB12NM50-1

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by implic ati o n or ot h er wis e und er an y pat ent or pa te nt r igh ts of STMi cr oe l ect ro ni cs . Sp ec if i cat i on s ment i o ned i n th is p ub li c ati on ar e s ubj ec t
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