Page 1
ST
ST
ST
STN4946
N 4946
N4946
N4946
DualNChannelEnhancementModeMOSFET
12A
1
DESCRIPTION
FEATURE
FEATURE
FEATURE
FEATURE
60V/12A,R
DS(ON)
=44mΩ(Typ.)
@VGS=10V
60V/8.0A,R
DS(ON)
=50mΩ
@VGS=4.5V
Superhighdensitycelldesignfor
extremelylowR
DS(ON)
Exceptionalon-resistanceand
maximumDCcurrentcapability
SOP-8packagedesign
DESCRIPTION
DESCRIPTION
DESCRIPTION
TheSTN4946istheDualN-Channellogicenhancementmodepowerfieldeffect
transistorsareproducedusinghighcelldensity,DMOStrenchtechnology.
Thishighdensityprocessisespeciallytailoredtominimizeon-stateresistance.
Thesedevicesareparticularlysuitedforlowvoltageapplication,notebookcomputer
Li-ionBattery,powermanagementandotherbatterypoweredcircuitswherehigh-side
switching.
PIN
C ONFIGURATION
PIN
CONFIGURATION
PIN
PINCONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
�
�
�
�
�
PART
PART
PART
PARTMARKING
SOP-8
SOP-8
SOP-8
SOP-8
M ARKING
MARKING
MARKING
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN49462009.V1
Page 2
ST
ST
ST
STN4946
N 4946
N4946
N4946
DualNChannelEnhancementModeMOSFET
12A
2
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Unit
Unit
Unit
Unit
Drain-SourceVoltage
V
DSS
60
V
Gate-SourceVoltage
V
GSS
±
20
V
ContinuousDrainCurrent
(TJ=150
℃
)
TA=25℃
TA=70
℃
I
D
8.0
6.0
A
PulsedDrainCurrent
I
DM
30
A
ContinuousSourceCurrent
(DiodeConduction)
I
S
11
A
PowerDissipation
TA=25℃
TA=70
℃
P
D
2.5
1.6
W
OperationJunctionTemperature
TJ-55/150
℃
StorgaeTemperatureRange
T
STG
-55/150
℃
ThermalResistance-JunctiontoAmbient
Rθ
JA
80
℃
/W
ABSOULTE
ABSOULTE
ABSOULTEMAXIMUM
M AXIMUM
MAXIMUM
MAXIMUMRATINGS
R ATINGS
RATINGS
RATINGS(Ta=25
℃
Unlessotherwisenoted)
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN49462009.V1
Page 3
ST
ST
ST
STN4946
N 4946
N4946
N4946
DualNChannelEnhancementModeMOSFET
12A
3
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-SourceBreakdown
Voltage
V
(BR)DSSVGS
=0V,ID=250uA
60
V
GateThresholdVoltage
V
GS(th)VDS
=V
GS,ID
=250uA
0.8
2.0
V
GateLeakageCurrent
I
GSS
V
DS
=0V,V
GS
=
±
20V
±
100
nA
ZeroGateVoltageDrain
Current
I
DSS
TJ=85
℃
V
DS
=60V,V
GS
=0V
1
uA
V
DS
=60V,V
GS
=0V
5
On-StateDrainCurrent
I
D(on)VDS
≦5V,V
GS
=10V
300A
Drain-sourceOn-Resistance
R
DS(on)
V
GS
=
10V,ID=10A
V
GS
=4
.5V,ID=6A
0.038
0.042
0.044
0.050
Ω
ForwardTranConductance
g
fs
V
DS
=15V,ID=5.3A
24
S
DiodeForwardVoltage
VSDIS=2.0A,V
GS
=0V
0.8
1.2
V
Dynamic
Dynamic
Dynamic
Dynamic
TotalGateCharge
Q
g
V
DS
=30V,V
GS
=10V
I
D
≡
5.3A
10
15
nC
Gate-SourceCharge
Qgs3.5
Gate-DrainCharge
Q
gd
3.6
InputCapacitance
Ciss
VDS=15V,VGS=0V
f=1MHz
890
pF
OutputCapacitance
Coss
85
ReverseTransferCapacitance
Crss
48
Turn-OnTime
t
d(on)
tr
V
DD
=30V,RL=6.8
Ω
ID=4.4A,V
GEN
=10V
RG=1
Ω
10
15
nS
12
20
Turn-OffTime
t
d(off)
tf
25
35
10
15
ELECTRICAL
ELECTRICAL
ELECTRICALCHARACTERISTICS
C HARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS(Ta=25
℃
Unlessotherwisenoted)
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN49462009.V1
Page 4
ST
ST
ST
STN4946
N 4946
N4946
N4946
DualNChannelEnhancementModeMOSFET
12A
4
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS(25
℃
UnlessNote)
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN49462009.V1
Page 5
ST
ST
ST
STN4946
N 4946
N4946
N4946
DualNChannelEnhancementModeMOSFET
12A
5
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS(
(
2 5
(
(25
U nless
25
Unless
25℃Unless
UnlessNote
N ote
Note
Note)
)
)
)
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN49462009.V1
Page 6
ST
ST
ST
STN4946
N 4946
N4946
N4946
DualNChannelEnhancementModeMOSFET
12A
6
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS(25
℃
UnlessNote)
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN49462009.V1
Page 7
ST
ST
ST
STN4946
N 4946
N4946
N4946
DualNChannelEnhancementModeMOSFET
12A
7
SOP-8
SOP-8
SOP-8
SOP-8PACKAGE
P ACKAGE
PACKAGE
PACKAGEOUTLINE
O UTLINE
OUTLINE
OUTLINE
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN49462009.V1
Page 8
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