
STN4
STN4
STN4
STN485
8 5
85
850
0
0
0
NChannelEnhancementModeMOSFET
7.2A
DESCRIPTION
FEATURE
FEATURE
FEATURE
FEATURE
60V/7.2A,R
DS(ON)
=27mΩ(Typ.)
@VGS=10V
60V/6.8A,R
DS(ON)
=32mΩ
@VGS=4.5V
Superhighdensitycelldesignfor
extremelylowR
DS(ON)
Exceptionalon-resistanceand
maximumDCcurrentcapability
SOP-8packagedesign
DESCRIPTION
DESCRIPTION
DESCRIPTION
STN4850istheN-Channellogicenhancementmodepowerfieldeffecttransistor
whichisproducedusinghighcelldensity,DMOStrenchtechnology.Thishighdensity
processisespeciallytailoredtominimizeon-stateresistance.Thesedevicesare
particularlysuitedforlowvoltageapplicationsuchaspowermanagementandother
batterypoweredcircuitswherehigh-sideswitching.
PIN
C ONFIGURATION
PIN
CONFIGURATION
PIN
PINCONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
�
�
�
�
�
PART
PART
PART
PARTMARKING
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
M ARKING
MARKING
MARKING
Y:
Y ear
Y:
Year
Y:
Y:Year
YearCode
A:
P rocess
A:
Process
A:
A:Process
ProcessCode
C ode
Code
Code
C ode
Code
Code
Copyright©2007,StansonCorp.
STN48502010.V1

STN4
STN4
STN4
STN485
8 5
85
850
0
0
0
NChannelEnhancementModeMOSFET
7.2A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
ContinuousDrainCurrent(TJ=150
℃
)
ContinuousSourceCurrent(DiodeConduction)
OperationJunctionTemperature
ThermalResistance-JunctiontoAmbient
ABSOULTE
ABSOULTE
ABSOULTEMAXIMUM
M AXIMUM
MAXIMUM
MAXIMUMRATINGS
R ATINGS
RATINGS
RATINGS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN48502010.V1

STN4
STN4
STN4
STN485
8 5
85
850
0
0
0
NChannelEnhancementModeMOSFET
7.2A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Static
Static
Static
Static
Drain-Source
BreakdownVoltage
ZeroGateVoltage
DrainCurrent
V
DS
=48V,V
GS
=0V
TJ=85℃
Drain-sourceOnResistance
V
GS
=10V,ID=7.2A
V
GS
=4.5V,ID=6.8A
Dynamic
Dynamic
Dynamic
Dynamic
V
DS
=30V,V
GS
=10V
ID≡6A
Reverse
TransferCapacitance
V
DD
=30V,RL=30Ω
ID=1.0A,V
GEN
=10V
RG=6Ω
ELECTRICAL
ELECTRICAL
ELECTRICALCHARACTERISTICS
C HARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN48502010.V1

STN4
STN4
STN4
STN485
8 5
85
850
0
0
0
NChannelEnhancementModeMOSFET
7.2A
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN48502010.V1

STN4
STN4
STN4
STN485
8 5
85
850
0
0
0
NChannelEnhancementModeMOSFET
7.2A
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN48502010.V1

STN4
STN4
STN4
STN485
8 5
85
850
0
0
0
NChannelEnhancementModeMOSFET
7.2A
PACKAGE
PACKAGE
PACKAGE
PACKAGEOUTLINE
O UTLINE
OUTLINE
OUTLINESOP-8P
S OP-8P
SOP-8P
SOP-8P
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN48502010.V1