Page 1
STN4
STN4
STN4
STN4822
8 22
822
822
DualNChannelEnhancementModeMOSFET
8.5A
DESCRIPTION
FEATURE
FEATURE
FEATURE
FEATURE
30V/8.5A,R
DS(ON)
=16mΩ(Typ.)
@VGS=10V
30V/6.6A,R
DS(ON)
=26mΩ
@VGS=4.5V
Superhighdensitycelldesignfor
extremelylowR
DS(ON)
Exceptionalon-resistanceandmaximum
DCcurrentcapability
SOP-8packagedesign
DESCRIPTION
DESCRIPTION
DESCRIPTION
STN4822istheDualN-Channellogicenhancementmodepowerfieldeffecttransistors
whichareproducedusinghighcelldensityDMOStrenchtechnology.Itissuitablefor
thepowermanagementapplicationsintheportableorbatterypoweredsystem.
PIN
C ONFIGURATION
PIN
CONFIGURATION
PIN
PINCONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
�
�
�
�
�
PART
PART
PART
PARTMARKING
SOP-8
SOP-8
SOP-8
SOP-8
Y:Year
Y:Year
Y:Year
Y:YearCode
M ARKING
MARKING
MARKING
C ode
Code
CodeA:
A :
A:
A:Process
P rocess
Process
ProcessCode
C ode
Code
Code
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN48222009.V1
Page 2
STN4
STN4
STN4
STN4822
8 22
822
822
DualNChannelEnhancementModeMOSFET
8.5A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Unit
Unit
Unit
Unit
Drain-SourceVoltage
V
DSS
30
V
Gate-SourceVoltage
V
GSS
±
20
V
ContinuousDrainCurrent
(TJ=150
℃
)
TA=25℃
TA=70
℃
I
D
8.5
6.6
A
PulsedDrainCurrent
I
DM
30
A
ContinuousSourceCurrent
(DiodeConduction)
I
S
3.0
A
PowerDissipation
TA=25℃
TA=70
℃
P
D
2.0
1.28
W
OperationJunctionTemperature
TJ-55/150
℃
StorgaeTemperatureRange
T
STG
-55/150
℃
ThermalResistance-JunctiontoAmbient
Rθ
JA
48
℃
/W
ABSOULTE
ABSOULTE
ABSOULTEMAXIMUM
M AXIMUM
MAXIMUM
MAXIMUMRATINGS
R ATINGS
RATINGS
RATINGS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN48222009.V1
Page 3
STN4
STN4
STN4
STN4822
8 22
822
822
DualNChannelEnhancementModeMOSFET
8.5A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-SourceBreakdown
Voltage
V
(BR)DSSVGS
=0V,ID=250uA
30
V
GateThresholdVoltage
V
GS(th)VDS
=V
GS,ID
=250uA
1.0
1.8
3.0
V
GateLeakageCurrent
I
GSS
V
DS
=0V,V
GS
=
±
20V
100
nA
ZeroGateVoltageDrain
Current
I
DSS
TJ=55
℃
V
DS
=24V,V
GS
=0V
1
uA
V
DS
=24V,V
GS
=0V
5
On-StateDrainCurrent
I
D(on)VDS
≥10
V,V
GS
=5V
300A
Drain-sourceOn-Resistance
R
DS(on)
V
GS
=
10V,ID=8.5A
V
GS
=4
.5V,ID=6.6A
13
20
17
26
m
Ω
ForwardTranConductance
g
fs
V
DS
=5.0V,ID=8.5A
23
S
DiodeForwardVoltage
VSDIS=1.0A,V
GS
=0V
0.76
1.0
V
Dynamic
Dynamic
Dynamic
Dynamic
TotalGateCharge
Q
g
V
DS
=15V,V
GS
=10V
ID=8.5A
15
23
nC
Gate-SourceCharge
Qgs2.6
Gate-DrainCharge
Q
gd
2.78
InputCapacitance
Ciss
VDS=15.0V,VGS=0V
f=1MHz
805
1200
pF
OutputCapacitance
Coss
145
ReverseTransferCapacitance
Crss
112
Turn-OnTime
t
d(on)
tr
V
DS
=15V,RL=1.8
Ω
ID=1A,V
GEN
=10V
RG=3
Ω
5.2
6.5
nS
6
7.5
Turn-OffTime
t
d(off)
tf
19.3
25
4.3
6
ELECTRICAL
ELECTRICAL
ELECTRICALCHARACTERISTICS
C HARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN48222009.V1
Page 4
STN4
STN4
STN4
STN4822
8 22
822
822
DualNChannelEnhancementModeMOSFET
8.5A
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS(25
℃
UnlessNote)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN48222009.V1
Page 5
STN4
STN4
STN4
STN4822
8 22
822
822
DualNChannelEnhancementModeMOSFET
8.5A
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS(25
℃
UnlessNote)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN48222009.V1
Page 6
STN4
STN4
STN4
STN4822
8 22
822
822
DualNChannelEnhancementModeMOSFET
8.5A
SOP-8
SOP-8
SOP-8
SOP-8PACKAGE
P ACKAGE
PACKAGE
PACKAGEOUTLINE
O UTLINE
OUTLINE
OUTLINE
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STN48222009.V1
Page 7
Loading...