Datasheet STN4440 Datasheet (Stanson)

STN4440

N Channel Enhancement Mode MOSFET

5.0 A

DESCRIPTION

FEATURE

6 0V/ 10.0 A, R

DS(ON)

= 50 m Ω (Typ.)

@V GS = 10V

6 0V/ 8.0 A, R

DS(ON)

= 70 m Ω

@V GS = 4.5 V

Super high density cell design for

extremely low R

DS(ON)

Exceptional on-resistance and maximum DC current capability SOP-8 package design

DESCRIPTION

STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery power ed circuits where high-side switching.

CONFIGURATION

PIN CONFIGURATION

CONFIGURATION

SOP-8

�

PART

PART MARKING

Y:

Y: Year

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com

MARKING

Year

Code

Year

Code

Year Code

Code A:

A:

Process

A:

Process

A: Process

Process Code

Code

STN4440 2009. V1

STN4440

N Channel Enhancement Mode MOSFET

5.0 A

ABSOULTE

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

VDSS

6 0

V

Gate-Source Voltage

VGSS

± 20

V

Continuous Drain Current (TJ=150

℃

)

TA=25 ℃ TA=70

℃

ID

5.0

4.0

A

Pulsed Drain Current

IDM

2 0

A

Continuous Source Current (Diode Conduction)

IS

4.0

A

Power Dissipation

TA=25 ℃ TA=70

℃

PD

2. 5

1.6

W

Operation Junction Temperature

TJ

150

℃

Storgae Temperature Range

TSTG

-55/150

℃

Thermal Resistance-Junction to Ambient

R θ JA

8 0

℃

/W

ABSOULTE

ABSOULTE MAXIMUM

MAXIMUM

MAXIMUM RATINGS

RATINGS

RATINGS (Ta = 25

℃

Unless otherwise noted )

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com

STN4440 2009. V1

STN4440

N Channel Enhancement Mode MOSFET

5.0 A

ELECTRICAL

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V

(BR)DSSVGS

=0V,ID=250uA

6 0

V

Gate Threshold Voltage

V

GS(th)

V

DS

=V

GS

,ID= 2 50uA

1.0

3 .0

V

Gate Leakage Current

I

GSSVDS

=0V,V

GS

= ± 20V

± 100

nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 48 V,V

GS

=0V

1

uA

V

DS

= 48 V,V

GS

=0V

TJ= 5 ℃

5

On-State Drain Current

I

D(on)

V

DS

≧ 5V,V

GS

= 10V

20

A

Drain-source OnResistance

R

DS(on)

V

GS

=10V,ID=10 A

V

GS

= 4.5 V,ID= 8 A

50

70

m Ω

Forward Transconductance

gfs

V

DS

=5V,ID= 6.2A V

1 1

S

Diode Forward Voltage

VSDIS= 1A ,V

GS

=0V

0.8

1.2VDynamic

Dynamic

Total Gate Charge

Q

g

V

DS

= 30 V,V

GS

= 10V

ID≡ 5 A

9

11

nC

Gate-Source Charge

Qgs1.6

Gate-Drain Charge

Q

gd

2.2

Input Capacitance

C

iss

V DS == 30 V,VGS=0V

F=1MHz

450

pF

Output Capacitance

C

oss

60

Reverse Transfer C apacitance

C

rss

25

Turn-On Time

t

d(on)

tr

V

DD

= 10 V,RL= 6 Ω

V

D S

= 30 V , RG= 3 Ω

5.1

7

nS

2.6

4

Turn-Off Time

t

d(off)

tf

16

20

2.5

3

ELECTRICAL

ELECTRICAL CHARACTERISTICS

CHARACTERISTICS

CHARACTERISTICS ( Ta = 25

℃

Unless otherwise noted )

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com

STN4440 2009. V1

STN4440

N Channel Enhancement Mode MOSFET

5.0 A

TYPICAL

TYPICAL CHARACTERICTICS

CHARACTERICTICS

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com

STN4440 2009. V1

STN4440

N Channel Enhancement Mode MOSFET

5.0 A

TYPICAL

TYPICAL CHARACTERICTICS

CHARACTERICTICS

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com

STN4440 2009. V1

STN4440

N Channel Enhancement Mode MOSFET

5.0 A

PACKAGE

PACKAGE OUTLINE

OUTLINE

OUTLINE SOP-8P

SOP-8P

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com

STN4440 2009. V1