Datasheet STN4416 Datasheet (Stanson)

STN4416

NChannelEnhancementModeMOSFET

10A

DESCRIPTION

FEATURE

20V/10A,R

DS(ON)

=11mΩ(Typ.)

@VGS=4.5V

20V/5.6A,R

DS(ON)

=23mΩ

@VGS=2.5V

Superhighdensitycelldesignfor

extremelylowR

DS(ON)

Exceptionalon-resistanceand maximumDCcurrentcapability SOP-8packagedesign

STN4416

Y

YA

A

DESCRIPTION

STN4416istheN-Channellogicenhancementmodepowerfieldeffecttransistor whichisproducedusinghighcelldensity,DMOStrenchtechnology.Thishighdensity processisespeciallytailoredtominimizeon-stateresistance.Thesedevicesare particularlysuitedforlowvoltageapplicationsuchaspowermanagementandother batterypoweredcircuitswherehigh-sideswitching.

C ONFIGURATION

CONFIGURATION

PINCONFIGURATION

CONFIGURATION

SOP-8

�

PART

PARTMARKING SOP-8

SOP-8

M ARKING

MARKING

Y:

Y:Year A:

A:

A:Process

Y ear

Year

YearCode P rocess

Process

ProcessCode

C ode

Code

C ode

Code

STANSONTECHNOLOGY 120BentleySquare,MountainView,Ca94040USA www.stansontech.com

STN44162009.V1

STN4416

NChannelEnhancementModeMOSFET

10A

ABSOULTE

Parameter

Symbol

Typical

Unit

Drain-SourceVoltage

VDSS20V

Gate-SourceVoltage

VGSS

±12

V

ContinuousDrainCurrent(TJ=150

℃

)

TA=25℃ TA=70

℃

ID

1.0

7.2

A

PulsedDrainCurrent

IDM35A

ContinuousSourceCurrent(DiodeConduction)

IS

2.3

A

PowerDissipation

TA=25℃ TA=70

℃

PD

2.5

1.6

W

OperationJunctionTemperature

TJ

150

℃

StorgaeTemperatureRange

TSTG

-55/150

℃

ThermalResistance-JunctiontoAmbient

RθJA

80

℃

/W

ABSOULTE

ABSOULTEMAXIMUM

M AXIMUM

MAXIMUM

MAXIMUMRATINGS

R ATINGS

RATINGS

RATINGS(Ta=25

℃

Unlessotherwisenoted)

STANSONTECHNOLOGY 120BentleySquare,MountainView,Ca94040USA www.stansontech.com

STN44162009.V1

STN4416

NChannelEnhancementModeMOSFET

10A

ELECTRICAL

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Static

Drain-Source BreakdownVoltage

V

(BR)DSSVGS

=0V,ID=250uA

20

V

GateThreshold Voltage

V

GS(th)

V

DS

=V

GS

,ID=250uA

0.6

1.4

V

GateLeakageCurrent

I

GSSVDS

=0V,V

GS

=±12V

±100

nA

ZeroGateVoltage DrainCurrent

I

DSS

V

DS

=20V,V

GS

=0V

1

uA

V

DS

=20V,V

GS

=0V

TJ=85℃

5

On-StateDrain Current

I

D(on)

V

DS

≧5V,V

GS

=10V

6

A

Drain-sourceOnResistance

R

DS(on)

V

GS

=4.5V,ID=6.8A

V

GS

=2.5V,ID=5.6A

11

23

mΩ

Forward Transconductance

gfs

V

DS

=15V,ID=6.2AV

30

S

DiodeForwardVoltage

VSDIS=1.0A,V

GS

=0V

0.8

1.2

V

Dynamic

TotalGateCharge

Q

g

V

DS

=10V,V

GS

=4.5V

ID≡5.0A

25

35

nC

Gate-SourceCharge

Qgs5.6

Gate-DrainCharge

Q

gd

9.6

InputCapacitance

C

iss

VDS==10V,VGS=0V

f=1MHz

1250

pF

OutputCapacitance

C

oss

235

Reverse TransferCapacitance

C

rss

195

Turn-OnTime

t

d(on)

tr

V

DD

=10V,RL=10Ω

ID=1A,V

GEN

=4.5V

RG=6Ω

20

30

nS

18

28

Turn-OffTime

t

d(off)

tf

75

90

65

85

ELECTRICAL

ELECTRICALCHARACTERISTICS

C HARACTERISTICS

CHARACTERISTICS

CHARACTERISTICS(Ta=25

℃

Unlessotherwisenoted)

STANSONTECHNOLOGY 120BentleySquare,MountainView,Ca94040USA www.stansontech.com

STN44162009.V1

STN4416

NChannelEnhancementModeMOSFET

10A

TYPICAL

TYPICALCHARACTERICTICS

C HARACTERICTICS

CHARACTERICTICS

STANSONTECHNOLOGY 120BentleySquare,MountainView,Ca94040USA www.stansontech.com

STN44162009.V1

STN4416

NChannelEnhancementModeMOSFET

10A

TYPICAL

TYPICALCHARACTERICTICS

C HARACTERICTICS

CHARACTERICTICS

STANSONTECHNOLOGY 120BentleySquare,MountainView,Ca94040USA www.stansontech.com

STN44162009.V1

STN4416

NChannelEnhancementModeMOSFET

10A

PACKAGE

PACKAGEOUTLINE

O UTLINE

OUTLINE

OUTLINESOP-8P

S OP-8P

SOP-8P

STANSONTECHNOLOGY 120BentleySquare,MountainView,Ca94040USA www.stansontech.com

STN44162009.V1