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ST
ST
ST
ST N3456
N3456
N3456
N3456
N C hannel Enhancement Mode MOSFET
6 . 0 A
DESCRIPTION
Part
Part
Part
Part Number
Number
Number
Number
Package
Package
Package
Package
Part
Part
Part
Part Marking
Marking
Marking
Marking
S T N3456 ST6RG
T SOP - 6
56 YW
FEATUR
FEATUR
FEATUR
FEATUR E
E
E
E
◆ 3 0V/ 6 .0A, R DS(ON) = 40 m Ω @VGS= 10 V
◆ 3 0V/ 5.0 A, R DS(ON) = 50 m Ω @VGS= 4 .5V
◆ Super high density cell design for extremely low
R DS(ON)
◆ Exceptional an-resistance and maximum DC
current capability
◆ TSOP-6P package design
DESCRIPTION
DESCRIPTION
DESCRIPTION
The ST N3456 is the N -Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance . These devices are particularly
suited for low voltage application, such as cellular phone and notebook computer
power management and other battery powered circuits, and low in-line power loss are
needed in a very small outline surface mount package.
PIN
CONFIGURATION
PIN
CONFIGURATION
PIN
PIN CONFIGURATION
CONFIGURATION
TS
OP-
OP-
OP- 6P
6P
6P
6P
TS
TS
TS OP-
Y:
Year
Y:
Year
Y:
Y: Year
Year Code
W:
Week
W:
Week
W:
W: Week
Week Code
ORDERING
ORDERING
ORDERING
ORDERING INFORMATION
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
※ Week Code Code : A ~ Z ; a ~ z
※ S T N3456 ST6 R G ST6 : TSOP-6; R: Tape Reel ; G: Pb – Fre e
Code
Code
Code
Code
Code
Code
INFORMATION
INFORMATION
INFORMATION
ST N 34 5 6 2008. V1
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ST
ST
ST
ST N3456
N3456
N3456
N3456
N C hannel Enhancement Mode MOSFET
6 . 0 A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
Unit
Unit
Unit
Unit
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
± 20
V
Continuous Drain Current (TJ=150 ℃ )
T A =25 ℃
TA=70 ℃
I
D
6.0
5.0
A
Pulsed Drain Current
I
DM
30
A
Continuous Source Current (Diode Conduction)
I
S
1.7
A
Power Dissipation
T A =25 ℃
P
D
2.0
W
TA=70 ℃
1.3
Operation Junction Temperature
T
J
150
℃
Storage Temperature Range
T
STG
-55/150
℃
Thermal Resistance-Junction to Ambient
R
θ JA
90
℃ /W
ABSOULTE
ABSOULTE
ABSOULTE MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
RATINGS
RATINGS
RATINGS (Ta = 25 ℃ unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST N 34 5 6 2008. V1
Page 3
ST
ST
ST
ST N3456
N3456
N3456
N3456
N C hannel Enhancement Mode MOSFET
6 . 0 A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-Source Breakdown
Voltage
V
(BR)DSS
V
GS
=0V,ID= - 250 uA
30
V
Gate Threshold Voltage
V
GS(th)
V
DS
=VGS,ID= - 250uA
1.0
3.0
V
Gate Leakage Current
I
GSS
V
DS
=0V,V
GS
= ± 20 V
± 100
nA
Zero Gate Voltage Drain
Current
I
DSS
V
DS
= 24 V,V
GS
= 1. 0V
1
uA
V
DS
= 24 V,V
GS
=0V
TJ= 5 5 ℃
10
On-State Drain Current
I
D(on)VDS
≦ - 5V,V
GS
= - 10 V
10
A
Drain-source On-Resistance
R
DS(on)
V
GS
= 10 V,ID= 6.0 A
0.0 30
0.0 4 0
Ω
V
GS
= 4.5 V,ID= 5.0A
0.0 40
0. 050
Forward Tran s conductance
g
fs
V
DS
= 4.5 V,ID= 5.4 A
12
S
Diode Forward Voltage
V
SD
IS= 1.7 A,V
GS
=0V
0.8
1.2
V
Dynamic
Dynamic
Dynamic
Dynamic
Total Gate Charge
Qg10
18
nC
Gate-Source Charge
Qgs1. 6
Gate-Drain Charge
Qgd3.2
Input Capacitance
Ciss
V
DS
= 15 V,V
GS
= 0 ,
f = 1MHz
4 50
pF
Output Capacitance
Coss
240
Reverse Transfer
Capacitance
Crss
38
Turn-On Time
T
d(on)
V
DD
=15V,
RL=15 Ω , V
GEN
=10 V
R
G
= 6 Ω
7
15nstr10
2 0
Turn-Off Time
T
d(off)
20
40
tf11
20
V
DS
= 15 V,V
GS
= 10 V,
V
D S
=6.7A
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST N 34 5 6 2008. V1
Page 4
ST
ST
ST
ST N3456
N3456
N3456
N3456
N C hannel Enhancement Mode MOSFET
6 . 0 A
TYPICAL
TYPICAL
TYPICAL
TYPICAL CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST N 34 5 6 2008. V1
Page 5
ST
ST
ST
ST N3456
N3456
N3456
N3456
N C hannel Enhancement Mode MOSFET
6 . 0 A
TYPICAL
TYPICAL
TYPICAL
TYPICAL CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST N 34 5 6 2008. V1
Page 6
ST
ST
ST
ST N3456
N3456
N3456
N3456
N C hannel Enhancement Mode MOSFET
6 . 0 A
T
SOP-6
T
SOP-6
T
T SOP-6
SOP-6 PACKAGE
PACKAGE
PACKAGE
PACKAGE OUTLINE
OUTLINE
OUTLINE
OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
ST N 34 5 6 2008. V1
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