Datasheet STK3NA50 Datasheet (SGS Thomson Microelectronics)

STK3NA50

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on)

I

D

STK 3NA50 500 V < 3 Ω 2.7 A

■ TYPICAL R

■ ± 30V GATE TO SOURCE VOLTAGE RATING

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW INTRINSIC CAPACITANCES

■ GATE GHARGE MINIMIZED

■ REDUCED THRESHOLD VOLTAGE SPREAD

DS(on)

= 2.4 Ω

o

C

DESCRIPTION

This series of POWER MOSFETS represents the
most advanced high voltage technology. The op­timized cell layout coupled with a new proprietary
edge termination concur to give the device low
R

and gate charge, unequalled ruggedness

DS(on)

and superior switching performance.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWERSUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

2

3

2

1

1

SOT-82 SOT-194

(option)

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

V

V

V

I

DM

P

T

(•) Pulsewidth limited bysafe operating area

November 1996

Drain - s ource Voltage (VGS= 0) 500 V

DS

Drain- gate Voltage (RGS=20kΩ) 500 V

DGR

Gate-source Voltage ± 30 V

GS

Drain Current (continuous) at Tc=25oC2.7A

I

D

Drain Current (continuous) at Tc=100oC1.7A

I

D

(•) Drain Current (pulsed) 10.8 A

Total Di ssipation a t Tc=25oC50W

tot

Derat ing Factor 0.4 W/
St or a ge Tem perature -65 t o 150

stg

Max. Operating Jun ction T emperature 150

T

j

o
o

o

C
C
C

1/10

STK3NA50

THERMAL DATA

R

thj-case

R

thj-amb

R

thj-amb

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Valu e Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e

l

Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng Tj=25oC, ID=IAR,VDD=50V)
Repetitive Avalanc he Energ y

AR

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive

(Tc= 100oC, pulse width l imited by Tjmax, δ <1%)

2.5
80

0.7

275

2.7 A

40 mJ

2mJ

1.7 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS= 0 500 V

Break d own Volta ge

I

DSS

I

GSS

Zer o G at e V oltage
Drain Current (V

GS

Gat e- body Leakage

=0)

=MaxRating

V

DS

V

= Max Rating x 0.8 Tc=125oC

DS

25

250

VGS= ± 30 V ± 100 nA

Current (VDS=0)

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V
St at ic Drain-s our ce O n

VGS=10V ID= 1.5 A 2.4 3 Ω

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

3.3 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=1.5A 1.2 2.2 S

VDS=25V f=1MHz VGS=0 370

62
20

485

81
27

µA
µA

pF
pF
pF

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STK3NA50

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on T ime

t

Rise Time

r

Turn-on Current S lope VDD=400V ID=3A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage Rise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAINDIODE

VDD=250V ID=1.5A
RG=18 Ω VGS=10V

14
23

(see test circuit, figure 3)

340 A/µs
RG=18 Ω VGS=10V
(see test circuit, figure 5)

VDD= 400 V ID=3A VGS=10V 21

6
9

VDD=400V ID=3A
RG=18 Ω VGS=10V
(see test circuit, figure 5)

13
11
26

20
30

28 nC

18
16
35

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain C urrent

(•)

Source-drain C urrent

2.7

10.8

(pulsed)

V

(∗) Forward On Voltage ISD=2.7A VGS=0 1.6 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD=3A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)

350

4.2

Charge

I

RRM

Reverse Recovery

24

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Area Thermal Impedance

A
A

ns

µC

A

3/10

STK3NA50

Derating Curve

Transfer Characteristics

Output Characteristics

Transconductance

Static Drain-source On Resistance

4/10

Gate Charge vs Gate-source Voltage

STK3NA50

Capacitance Variations Normalized Gate Threshold Voltage vs

Temperature

Normalized On Resistance vs Temperature Turn-on Current Slope

Cross-over TimeTurn-off Drain-source Voltage Slope

5/10

STK3NA50

Switching SafeOperating Area Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

6/10

STK3NA50

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge Test Circuit

7/10

STK3NA50

SOT-82 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 7.4 7.8 0.291 0.307

B 10.5 11.3 0.413 0.445

b 0.7 0.9 0.028 0.035

b1 0.49 0.75 0.019 0.030

C 2.4 2.7 0.04 0.106

c1 1.2 0.047

D 15.7 0.618

e 2.2 0.087

e3 4.4 0.173

F 3.8 0.150

H 2.54 0.100

mm inch

C

c1

b

b1

A

F

BD

H

e

e3

P032A

8/10

SOT-194 MECHANICAL DATA

STK3NA50

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 7.4 7.8 0.291 0.307
B 10.5 11.3 0.413 0.445

b 0.7 0.9 0.028 0.035

b1 0.49 0.75 0.019 0.030

C 2.4 2.7 0.094 0.106
c1 1.2 0.047
c2 1.3 0.051

D 6 0.236

e 2.2 0.087

e3 4.4 0.173

F 3.8 0.150

H 2.54 0.100

P45°(typ.)

S 4 0.157
S1 2 0.079

T 0.1 0.004

mm inch

C

A

F

B

C1

H

D

b1

T

e

SS1

P

b

c2

e3

P032B

9/10

STK3NA50

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rightsof third parties which mayresults fromits use. No
licenseis granted by implication or otherwise under any patentor patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subject to change withoutnotice. Thispublication supersedes andreplacesall information previously supplied.
SGS-THOMSONMicroelectronics products are not authorizedfor use ascriticalcomponents in lifesupport devices or systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.

 1996 SGS-THOMSON Microelectronics -Printed in Italy- AllRightsReserved

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