Datasheet STK2N80 Datasheet (SGS Thomson Microelectronics)

STK2N80

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on)

I

D

STK 2N80 800 V < 7 Ω 2.1 A

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW INPUT CAPACITANCE

■ LOW GATE CHARGE

■ APPLICATION ORIENTED

DS(on)

=5Ω

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWERSUPPLIES (SMPS)

■ CONSUMER AND INDUSTRIAL LIGHTING

2

3

2

1

1

SOT-82 SOT-194

(option)

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

V

V

V

I

DM

P

T

(•) Pulsewidth limited bysafe operating area

December 1996

Drain - s ource Voltage (VGS= 0) 800 V

DS

Drain- gate Voltage (RGS=20kΩ) 800 V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC2.1A

I

D

Drain Current (continuous) at Tc=100oC1.3A

I

D

(•) Drain Current (pulsed) 9.6 A

Total D i ssipation at Tc=25oC70W

tot

Derat ing Factor 0.56 W/
St or a ge Tem perature -65 to 150

stg

Max. Operating Junctio n Temperatur e 150

T

j

o
o

o

C
C
C

1/10

STK2N80

THERMAL DATA

R

thj-case

R

thj-amb

R

thj-amb

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Valu e Uni t

I

AR

E

E

I

AR

Thermal Res istance Junction -c as e Max
Thermal Resis tance Junction- ambient Max
Thermal Res istance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose

l

Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng Tj=25oC, ID=IAR,VDD=25V)
Repetitive Avalanc he Energ y

AR

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive

(Tc= 100oC, puls e width limited by Tjmax, δ <1%)

1.78
80

0.7

275

2.1 A

80 mJ

2.8 mJ

1.3 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS= 0 800 V

Break d own Volta ge

I

DSS

I

GSS

Zer o Gate Voltage
Drain Current (V

GS

Gat e- body Leakage

=0)

=MaxRating

V

DS

V

= Max R ating x 0.8 Tc=125oC

DS

25

250

VGS= ± 20 V ± 100 nA

Current (VDS=0)

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold V oltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n

VGS=10V ID=1A 5 7 Ω

Resistance

I

D(on)

On St ate Dra in Current VDS>I

D(on)xRDS(on)max

2.1 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=1A 1.2 1.9 S

VDS=25V f=1MHz VGS=0 460

55
22

600

70
30

µA
µA

pF
pF
pF

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STK2N80

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on Time

t

Rise Time

r

Turn-on C urrent Slope VDD=640V ID=2A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=400V ID=1.5A
RG=50 Ω VGS=10V

38
42

(see test circuit, figure 3)

160 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)

VDD= 640 V ID=2A VGS=10V 31

6

14

VDD=640V ID=2A
RG=50 Ω VGS=10V
(see test circuit, figure 5)

70
25

108

50
57

40 nC

90
32

140

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

2.1

9.6

(pulsed)

V

(∗) For w ar d On Volt age ISD=2.1A VGS=0 2 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD= 2 A di/dt = 100 A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)

920

18.4

Charge

I

RRM

Reverse Recovery

40

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Area Thermal Impedance

A
A

ns

µC

A

3/10

STK2N80

Derating Curve

Transfer Characteristics

Output Characteristics

Transconductance

Static Drain-source On Resistance

4/10

Gate Charge vs Gate-source Voltage

Capacitance Variations Normalized Gate Threshold Voltage vs

Temperature

Normalized On Resistance vs Temperature Turn-on Current Slope

STK2N80

Cross-over TimeTurn-off Drain-source Voltage Slope

5/10

STK2N80

Switching SafeOperating Area Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

6/10

STK2N80

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge Test Circuit

7/10

STK2N80

SOT-82 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 7.4 7.8 0.291 0.307

B 10.5 11.3 0.413 0.445

b 0.7 0.9 0.028 0.035

b1 0.49 0.75 0.019 0.030

C 2.4 2.7 0.04 0.106

c1 1.2 0.047

D 15.7 0.618

e 2.2 0.087

e3 4.4 0.173

F 3.8 0.150

H 2.54 0.100

mm inch

C

c1

b

b1

A

F

BD

H

e

e3

P032A

8/10

SOT-194 MECHANICAL DATA

STK2N80

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 7.4 7.8 0.291 0.307
B 10.5 11.3 0.413 0.445

b 0.7 0.9 0.028 0.035

b1 0.49 0.75 0.019 0.030

C 2.4 2.7 0.094 0.106
c1 1.2 0.047
c2 1.3 0.051

D 6 0.236

e 2.2 0.087

e3 4.4 0.173

F 3.8 0.150

H 2.54 0.100

P45°(typ.)

S 4 0.157
S1 2 0.079

T 0.1 0.004

mm inch

C

A

F

B

C1

H

D

b1

T

e

SS1

P

b

c2

e3

P032B

9/10

STK2N80

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement ofpatents or other rights of third parties which mayresults from its use. No
licenseis granted by implicationor otherwise under any patentor patentrights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication aresubject tochange withoutnotice. This publicationsupersedes and replaces allinformation previously supplied.
SGS-THOMSON Microelectronics products are notauthorizedfor use ascriticalcomponents in lifesupportdevices orsystemswithout express
writtenapproval of SGS-THOMSONMicroelectonics.

 1996 SGS-THOMSONMicroelectronics - Printed in Italy- All Rights Reserved

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