Datasheet STK22N06 Datasheet (SGS Thomson Microelectronics)

STK22N06

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on)

I

D

STK 22N06 60 V < 0. 065 Ω 22 A

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

o

■ 175

■ APPLICATION ORIENTED

C OPERATING TEMPERATURE

DS(on)

= 0.048 Ω

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

2

3

2

1

1

SOT-82 SOT-194

(option)

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

V

V

V

I

DM

P

T

(•) Pulsewidth limited bysafe operating area

May 1993

Drain - s ource Voltage (VGS=0) 60 V

DS

Drain- gate Voltage (RGS=20kΩ)60V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC22A

I

D

Drain Current (continuous) at Tc=100oC15A

I

D

(•) Drain Current (pulsed) 88 A

Total D i ssipation at Tc=25oC65W

tot

Derat ing Factor 0.43 W/
St or a ge Tem perature -65 to 175

stg

Max. Operating Junctio n Temperatur e 175

T

j

o

C

o

C

o

C

1/7

STK22N06

THERMAL DATA

R

thj-case

R

thj-amb

R

thj-amb

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e

l

Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng Tj=25oC, ID=IAR,VDD=25V)
Repetitive Avalanc he Energ y

AR

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive

(Tc= 100oC, puls e width limited by Tjmax, δ <1%)

2.31
80

0.7

275

22 A

100 mJ

25 mJ

15 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS=0 60 V

Break d own Volta ge

I

DSS

I

GSS

Zer o Gate Voltage
Drain Current (V

GS

Gat e- body Leakage

=0)

=MaxRating

V

DS

V

= Max R ating x 0.8 Tc=125oC

DS

250

1000µAµA

VGS= ± 20 V ± 100 nA

Current (VDS=0)

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID=250µA22.94V
St at ic Drain-s our ce O n

Resistance
On St ate Dra in Current VDS>I

VGS=10V ID=11A
VGS=10V ID=11A Tc= 100oC

D(on)xRDS(on)max

0.048 0.065

0.13

22 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=11A 6 10 S

VDS=25V f=1MHz VGS=0 700

320

90

900
450
150

Ω
Ω

pF
pF
pF

2/7

STK22N06

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on Time

t

Rise Time

r

Turn-on C urrent Slope VDD=40V ID=22A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=30V ID=3A
RG=50 Ω VGS=10V

30
90

(see test circuit, figure 3)

230 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)

VDD=40V ID=22A VGS=10V 26

8
9

VDD=40V ID=22A
RG=50 Ω VGS=10V
(see test circuit, figure 5)

80
80

170

45

130

40 nC

120
120
250

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

22
88

(pulsed)

V

(∗) For w ar d On Volt age ISD=22A VGS=0 1.5 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD= 22 A di/dt = 100 A/µs
VDD=30V Tj= 150oC
(see test circuit, figure 5)

80

0.22

Charge

I

RRM

Reverse Recovery

5.5

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Area Thermal Impedance

A
A

ns

µC

A

3/7

STK22N06

Derating Curve

Transfer Characteristics

Output Characteristics

Transconductance

Static Drain-source On Resistance

4/7

Gate Charge vs Gate-source Voltage

Capacitance Variations Normalized Gate Threshold Voltage vs

Temperature

Normalized On Resistance vs Temperature Turn-on Current Slope

STK22N06

Cross-over TimeTurn-off Drain-source Voltage Slope

5/7

STK22N06

Switching SafeOperating Area Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

6/7

STK22N06

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge Test Circuit

7/7

STK22N06

SOT-82 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 7.4 7.8 0.291 0.307

B 10.5 11.3 0.413 0.445

b 0.7 0.9 0.028 0.035

b1 0.49 0.75 0.019 0.030

C 2.4 2.7 0.04 0.106

c1 1.2 0.047

D 15.7 0.618

e 2.2 0.087

e3 4.4 0.173

F 3.8 0.150

H 2.54 0.100

mm inch

C

c1

b

b1

A

F

BD

H

e

e3

P032A

8/7

SOT-194 MECHANICAL DATA

STK22N06

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 7.4 7.8 0.291 0.307
B 10.5 11.3 0.413 0.445

b 0.7 0.9 0.028 0.035

b1 0.49 0.75 0.019 0.030

C 2.4 2.7 0.094 0.106
c1 1.2 0.047
c2 1.3 0.051

D 6 0.236

e 2.2 0.087

e3 4.4 0.173

F 3.8 0.150

H 2.54 0.100

P45°(typ.)

S 4 0.157

S1 2 0.079

T 0.1 0.004

mm inch

C

A

F

B

C1

H

D

b1

T

e

SS1

P

b

c2

e3

P032B

9/7

STK22N06

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consequences of use of suchinformation nor for any infringementof patents orother rights of third parties whichmay results from its use. No
license isgrantedby implicationor otherwiseunderany patentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subjectto change without notice.This publication supersedes and replacesall information previouslysupplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedforuse ascriticalcomponentsin lifesupportdevices orsystemswithoutexpress
written approvalof SGS-THOMSON Microelectonics.

 1994 SGS-THOMSONMicroelectronics - All Rights Reserved

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