Datasheet STK22N05 Datasheet (SGS Thomson Microelectronics)

STK22N05

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on)

I

D

STK 22N05 50 V < 0. 065 Ω 22 A

■ TYPICAL R

■ AVALANCHERUGGEDNESS TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

o

■ 175

■ APPLICATION ORIENTED

C OPERATING TEMPERATURE

DS(on)

= 0.048 Ω

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

2

3

2

1

1

SOT-82 SOT-194

(option)

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

V

V

V

I

DM

P

T

(•) Pulsewidth limited bysafe operating area

December 1996

Drain - s ource Voltage (VGS=0) 50 V

DS

Drain- gate Voltage (RGS=20kΩ)50V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC22A

I

D

Drain Current (continuous) at Tc=100oC15A

I

D

(•) Drain Current (pulsed) 88 A

Total D i ssipation at Tc=25oC65W

tot

Derat ing Factor 0.43 W/
St or a ge Tem perature -65 to 175

stg

Max. Operating Junctio n Temperatur e 175

T

j

o
o

o

C
C
C

1/10

STK22N05

THERMAL DATA

R

thj-case

R

thj-amb

R

thj-amb

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e

l

Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng Tj=25oC, ID=IAR,VDD=25V)
Repetitive Avalanc he Energ y

AR

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive

(Tc= 100oC, puls e width limited by Tjmax, δ <1%)

2.31
80

0.7

275

22 A

100 mJ

25 mJ

15 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS=0 50 V

Break d own Volta ge

I

DSS

I

GSS

Zer o Gate Voltage
Drain Current (V

GS

Gat e- body Leakage

=0)

=MaxRating

V

DS

V

= Max R ating x 0.8 Tc=125oC

DS

1

10

VGS= ± 20 V ± 100 nA

Current (VDS=0)

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA22.94V
St at ic Drain-s our ce O n

VGS=10V ID= 11 A 0.048 0.065 Ω

Resistance

I

D(on)

On St ate Dra in Current VDS>I

D(on)xRDS(on)max

22 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=11A 6 10 S

VDS=25V f=1MHz VGS=0 700

320

90

900
450
150

µA
µA

pF
pF
pF

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STK22N05

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on Time

t

Rise Time

r

Turn-on C urrent Slope VDD=40V ID=22A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=30V ID=3A
RG=50 Ω VGS=10V

30
90

(see test circuit, figure 3)

230 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)

VDD=40V ID=22A VGS=10V 26

8
9

VDD=40V ID=22A
RG=50 Ω VGS=10V
(see test circuit, figure 5)

80
80

170

45

130

40 nC

120
120
250

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

22
88

(pulsed)

V

(∗) For w ar d On Volt age ISD=22A VGS=0 1.5 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD= 22 A di/dt = 100 A/µs
VDD=30V Tj= 150oC
(see test circuit, figure 5)

80

0.22

Charge

I

RRM

Reverse Recovery

5.5

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Area Thermal Impedance

A
A

ns

µC

A

3/10

STK22N05

Derating Curve

Transfer Characteristics

Output Characteristics

Transconductance

Static Drain-source On Resistance

4/10

Gate Charge vs Gate-source Voltage

Capacitance Variations Normalized Gate Threshold Voltage vs

Temperature

Normalized On Resistance vs Temperature Turn-on Current Slope

STK22N05

Cross-over TimeTurn-off Drain-source Voltage Slope

5/10

STK22N05

Switching SafeOperating Area Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

6/10

STK22N05

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge Test Circuit

7/10

STK22N05

SOT-82 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 7.4 7.8 0.291 0.307

B 10.5 11.3 0.413 0.445

b 0.7 0.9 0.028 0.035

b1 0.49 0.75 0.019 0.030

C 2.4 2.7 0.04 0.106

c1 1.2 0.047

D 15.7 0.618

e 2.2 0.087

e3 4.4 0.173

F 3.8 0.150

H 2.54 0.100

mm inch

C

c1

b

b1

A

F

BD

H

e

e3

P032A

8/10

SOT-194 MECHANICAL DATA

STK22N05

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 7.4 7.8 0.291 0.307
B 10.5 11.3 0.413 0.445

b 0.7 0.9 0.028 0.035

b1 0.49 0.75 0.019 0.030

C 2.4 2.7 0.094 0.106
c1 1.2 0.047
c2 1.3 0.051

D 6 0.236

e 2.2 0.087

e3 4.4 0.173

F 3.8 0.150

H 2.54 0.100

P45°(typ.)

S 4 0.157

S1 2 0.079

T 0.1 0.004

mm inch

C

A

F

B

C1

H

D

b1

T

e

SS1

P

b

c2

e3

P032B

9/10

STK22N05

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information nor for any infringement of patents or other rightsof third partieswhich may resultsfrom its use.No
licenseis granted by implication orotherwise underany patent or patentrights ofSGS-THOMSONMicroelectronics. Specifications mentioned
in thispublication are subject to change withoutnotice. Thispublication supersedes andreplacesall informationpreviouslysupplied.
SGS-THOMSONMicroelectronics products are not authorizedfor use ascriticalcomponents in lifesupportdevices orsystemswithout express
writtenapproval ofSGS-THOMSONMicroelectonics.

 1996 SGS-THOMSON Microelectronics -Printed in Italy- AllRightsReserved

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