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®
HIGH VOLTAGE FAS T-SWITCHING
■ STK13003 IS REVERSE PINS OUT Vs
STANDARD SOT -82 PACKA G E
■ MEDIUM VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNA M IC PARA ME TERS
■ MINIMUM LO T- TO - LOT SPREAD F O R
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
APPLICATIONS:
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■ SWITCH MODE POWER SU PPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
STK13003
NPN POWER TRANSISTOR
SOT-82
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
September 2001
Collector-Emitter Voltage (VBE = 0) 700 V
CES
Collector-Emitter Voltage (IB = 0) 400 V
CEO
Emitter-Base Voltage
EBO
= 0, IB = 0.75 A, tp < 10µs, Tj < 150oC)
(I
C
Collector Current 1.5 A
I
C
Collector Peak Current (tp < 5 ms) 3 A
CM
I
Base Current 0.75 A
B
Base Peak Current (tp < 5 ms) 1.5 A
BM
Total Dissipation at Tc = 25 oC40W
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
BV
EBO
V
o
C
o
C
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STK13003
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.12
89
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
I
CEV
Collector Cut-off
Current (V
Emitter-Base
EBO
= -1.5V)
BE
= 700V
V
CE
V
= 700V T
CE
I
= 10 mA 9 18 V
E
= 125oC
j
1
5
mA
mA
Breakdown Voltage
(I
= 0)
C
V
CEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(I
= 0)
B
∗ Collector-Emitter
V
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 0.5 A V
FE
I
= 10 mA
C
L = 25mH
IC = 0.5 A IB = 0.1 A
I
= 1 A IB = 0.25 A
C
I
= 1.5 A IB = 0.5 A
C
IC = 0.5 A IB = 0.1 A
I
= 1 A IB = 0.25 A
C
= 2 V
CE
Group A
Group B
I
= 1 A V
C
CE
= 2 V
400 V
0.5
1
3
1
1.2
8
15
5
20
35
25
V
V
V
V
V
RESISTIVE LOAD
t
Rise Time
r
s
t
f
Storage Time
Fall Time
t
INDUCTIVE LOAD
t
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronic s sales office for delivery details.
s
Storage Time
I
= 1 A VCC = 125 V
C
I
= 0.2 A IB2 = -0.2 A
B1
= 25 µs
T
p
IC = 1 A IB1 = 0.2 A
V
= -5 V L = 50 mH
BE
V
= 300 V
clamp
1
4
0.7
µs
µs
µs
0.8 µs
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STK13003
Safe Operating Areas
DC Current Gain
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Sat uration Volt ag e
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STK13003
Inductive Load Fall Time Inductive Load Storage Time
Reverse B iased SOA
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Figure 1: Inductive Load Switching Test Circuits .
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuits.
STK13003
1) Fast electronic switch
2) Non-inductive Resistor
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STK13003
SOT-82 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.444
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.04 0.106
c1 1.0 1.3 0.039 0.05
D 15.4 16 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
H 2.54 0.100
H2 2.15 0.084
mm inch
C
A
F
B
H2
H
D
c1
b
b1
e
e3
P032A
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STK13003
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
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