Datasheet STK12N06L, STK12N05L Datasheet (SGS Thomson Microelectronics)

STK12N05L
STK12N06L

N - CHANNEL ENHANCEMENT MODE

LOW THRESHOLD POWER MOS TRANSISTOR

TYPE V

STK 12N05L
STK 12N06L

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW GATE CHARGE

■ LOGIC LEVEL COMPATIBLE INPUT

o

■ 175

C OPERATING TEMPERATURE FOR

DS(on)

DSS

50 V
60 V

= 0.115 Ω

R

DS(on)

<0.15Ω
<0.15Ω

I

D

12 A
12 A

o

C

STANDARD PACKAGE

■ APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

2

3

2

1

1

SOT-82 SOT-194

(option)

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

STK 12N05L ST K12N06L

V

V

V

I

DM

P

T

(•) Pulsewidth limited bysafe operating area

November 1996

Drain - s ource Voltage (VGS=0) 50 60 V

DS

Drain- gate Voltage (RGS=20kΩ)5060V

DGR

Gate-source Voltage ± 15 V

GS

Drain Current (continuous) at Tc=25oC12A

I

D

Drain Current (continuous) at Tc=100oC8A

I

D

(•) Drain Current (pulsed) 48 A

Total D i ssipation at Tc=25oC50W

tot

Derating F actor 0.33 W/
St or a ge Tem perature -65 to 175

stg

Max. Operating Junctio n Temperatur e 175

T

j

o
o

o

C
C
C

1/10

STK12N05L/STK12N06L

THERMAL DATA

R

thj-case

R

thj-amb

R

thj-amb

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e

l

Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng Tj=25oC, ID=IAR,VDD=25V)
Repetitive Avalanc he Energ y

AR

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive

(Tc= 100oC, puls e width limited by Tjmax, δ <1%)

3

80

0.7

275

12 A

30 mJ

7mJ

8A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource
Break d own Volta ge

ID=250µAVGS=0

for STK12 N05L
for STK12 N06L5060

I

DSS

I

GSS

Zer o Gate Voltage
Drain Current (VGS=0)

Gat e- body Leakage

VDS=MaxRating
VDS= Max R ating x 0.8 Tc=125oC

1

10

VGS= ± 15 V ± 100 nA

Current (VDS=0)

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA11.62.5V
St at ic Drain-s our ce O n

VGS=5 V ID=6A 0.115 0.15 Ω

Resistance

I

D(on)

On St ate Dra in Current VDS>I

D(on)xRDS(on)max

15 A

VGS=10 V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=6A 4 8 S

VDS=25V f=1MHz VGS=0 350

150

50

500
200

80

V
V

µA
µA

pF
pF
pF

2/10

STK12N05L/STK12N06L

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on Time

t

Rise Time

r

Turn-on C urrent Slope VDD=40V ID=12A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=25V ID=6A
RG=50 Ω VGS=5V

55

18080260

(see test circuit, figure 3)

120 A/µs
RG=50 Ω VGS=5V
(see test circuit, figure 5)

VDD=40V ID=12A VGS=5V 12

6
4

VDD=40V ID=12A
RG=50 Ω VGS=5V
(see test circuit, figure 5)

40
60

110

18 nC

60
90

160

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

12
48

(pulsed)

V

(∗) F or w ar d On Volt age ISD=12A VGS=0 1.5 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD= 12 A di/dt = 100 A/µs
VDD=25V Tj=150oC
(see test circuit, figure 5)

75

0.15

Charge

I

RRM

Reverse Recovery

4

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas Thermal Impedance

A
A

ns

µC

A

3/10

STK12N05L/STK12N06L

Derating Curve

Transfer Characteristics

Output Characteristics

Transconductance

Static Drain-source On Resistance

4/10

Gate Charge vs Gate-source Voltage

STK12N05L/STK12N06L

Capacitance Variations Normalized Gate Threshold Voltage vs

Temperature

Normalized On Resistance vs Temperature Turn-on Current Slope

Cross-over TimeTurn-off Drain-source Voltage Slope

5/10

STK12N05L/STK12N06L

Switching SafeOperating Area Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

6/10

STK12N05L/STK12N06L

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time

Fig. 4: Gate Charge Test Circuit

7/10

STK12N05L/STK12N06L

SOT-82 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 7.4 7.8 0.291 0.307

B 10.5 11.3 0.413 0.445

b 0.7 0.9 0.028 0.035

b1 0.49 0.75 0.019 0.030

C 2.4 2.7 0.04 0.106

c1 1.2 0.047

D 15.7 0.618

e 2.2 0.087

e3 4.4 0.173

F 3.8 0.150

H 2.54 0.100

mm inch

C

c1

b

b1

A

F

BD

H

e

e3

P032A

8/10

SOT-194 MECHANICAL DATA

STK12N05L/STK12N06L

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 7.4 7.8 0.291 0.307
B 10.5 11.3 0.413 0.445

b 0.7 0.9 0.028 0.035

b1 0.49 0.75 0.019 0.030

C 2.4 2.7 0.094 0.106
c1 1.2 0.047
c2 1.3 0.051

D 6 0.236

e 2.2 0.087

e3 4.4 0.173

F 3.8 0.150

H 2.54 0.100

P45°(typ.)

S 4 0.157

S1 2 0.079

T 0.1 0.004

mm inch

C

A

F

B

C1

H

D

b1

T

e

SS1

P

b

c2

e3

P032B

9/10

STK12N05L/STK12N06L

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information nor for any infringement of patents or other rightsof third partieswhich may resultsfrom its use.No
licenseis granted by implication orotherwise underany patent or patentrights ofSGS-THOMSONMicroelectronics. Specifications mentioned
in thispublication are subject to change withoutnotice. Thispublication supersedes andreplacesall informationpreviouslysupplied.
SGS-THOMSONMicroelectronics products are not authorizedfor use ascriticalcomponents in lifesupportdevices orsystemswithout express
writtenapproval ofSGS-THOMSONMicroelectonics.

 1996 SGS-THOMSON Microelectronics -Printed in Italy- AllRightsReserved

Australia- Brazil -Canada -China - France- Germany - HongKong- Italy - Japan- Korea- Malaysia - Malta- Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland-Taiwan - Thailand- UnitedKingdom - U.S.A

SGS-THOMSONMicroelectronics GROUPOF COMPANIES

.

10/10