Page 1
STH12NA60/FI
STW12NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
STH12NA60
STH12NA60FI
STW12NA60
■ TYPICAL R
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
DS(on)
DSS
600 V
600 V
600 V
= 0.44 Ω
R
DS(on)
< 0.6 Ω
< 0.6 Ω
< 0.6 Ω
I
D
12 A
7 A
12 A
o
C
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The optimized cell layout coupled with a new proprietary
edge termination concur to give the device low
R
and gate charge, unequalled ruggedness
DS(on)
and superior switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
TO-247
3
2
1
3
2
TO-218 ISOWATT218
1
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STH/STW1 2NA60 STH12NA 60FI
V
V
V
I
DM
P
V
T
(•) Pulse width limited by safe operating area
November 1996
Drain-source Voltage (VGS = 0) 600 V
DS
Drain- gate Voltage (RGS = 20 kΩ)600V
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC127A
D
I
Drain Current (continuous) at Tc = 100 oC7.6 4.4A
D
(•) Drain Current (pulsed) 48 48 A
Total Dissipation at Tc = 25 oC19080W
tot
Dera tin g Fact or 1.52 0.64 W/
Insulation Withstand Voltage (DC) 4000 V
ISO
Stor age Tempe rat ure -65 to 15 0
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
o
C
1/11
Page 2
STH12NA60/FI - STW12NA60
THERMAL DATA
TO-218/TO-247 ISOWA TT218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
E
I
AR
Thermal Resistance Junction-case Max 0.66 1.56
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Max im u m Le ad T em perature F or So l de rin g P ur p ose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Sing le Pul se Ava lan che Energy
AS
(starting Tj = 25 oC, ID = IAR, V
Repet iti ve Av alan che En erg y
AR
DD
= 50 V)
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
30
0.1
300
12 A
700 mJ
28 mJ
7.6 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. U nit
V
(BR) DSS
Drain-source
ID = 250 µA V
= 0 600 V
GS
Bre akdow n Vol tage
I
DSS
I
GSS
Zero Ga te V ol t ag e
Drain Current (V
GS
Gate -body Leaka ge
VDS = Max Rating
= 0)
VDS = Max Rating x 0.8 Tc = 125 oC
VGS = ± 30 V ± 10 0 nA
25
250
Current (VDS = 0)
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. U nit
V
R
GS(th)
DS(on)
Gate Threshold Voltage V
Stat ic Dra in-s ourc e On
= VGS ID = 250 µA 2.25 3 3.75 V
DS
VGS = 10V ID = 6 A 0.44 0.6 Ω
Resistance
I
D(on)
On State Dra in C urr e nt VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
12 A
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. U nit
g
(∗)Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 6 A 8 12 S
= 0 2500
GS
310
85
3250
410
110
µA
µA
pF
pF
pF
2/11
Page 3
STH12NA60/FI - STW12NA60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condition s Min. Typ. Max. U nit
t
d(on)
(di/dt)
Q
Q
Q
SWITCHING OFF
Symbol Parameter Test Condition s Min. Typ. Max. U nit
t
r(Voff)
t
SOURCE DRAIN DIODE
Turn-on Time
t
Rise Time
r
Turn-on Current Slope V
on
Tot al G a te C ha r ge
g
Gate -Sou rce Ch arge
gs
Gate-Drain Charge
gd
Off-voltage Rise Time
t
Fall Time
f
Cross-over Time
c
V
= 300 V ID = 6 A
DD
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 3)
= 480 V ID = 12 A
DD
RG = 47 Ω VGS = 10 V
(see te s t ci r cui t, fi g ure 5 )
VDD = 480 V ID = 12 A V
V
= 480 V ID = 12 A
DD
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
= 10 V 110
GS
25
35
35
50
190 A/µs
150 nC
15
47
35
20
57
50
30
80
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condition s Min. Typ. Max. U nit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
12
48
(pulsed)
V
(∗) F or w ar d On V ol t ag e ISD = 12 A VGS = 0 1.6 V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 12 A di/dt = 100 A/µs
SD
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
670
12.7
Charge
I
RRM
Reverse Recovery
38
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218
A
A
ns
µC
A
3/11
Page 4
STH12NA60/FI - STW12NA60
Thermal Impedeance For TO-218 and TO-247
Derating Curve For TO-218 and TO-247
Thermal Impedance For ISOWATT218
Derating Curve For ISOWATT218
Output Characteristics
4/11
Transfer Characteristics
Page 5
STH12NA60/FI - STW12NA60
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Temperature
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
5/11
Page 6
STH12NA60/FI - STW12NA60
Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Accidental Overload Area Source-drain Diode Forward Characteristics
6/11
Page 7
STH12NA60/FI - STW12NA60
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveforms
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
7/11
Page 8
STH12NA60/FI - STW12NA60
TO-247 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.208
A1 2.87 0.113
A2 1.5 2.5 0.059 0.098
b 1 1.4 0.039 0.055
b1 2.25 0.088
b2 3.05 3.43 0.120 0.135
C 0.4 0.8 0.015 0.031
D 20.4 21.18 0.803 0.833
e 5.43 5.47 0.213 0.215
E 15.3 15.95 0.602 0.628
L 15.57 0.613
L1 3.7 4.3 0.145 0.169
Q 5.3 5.84 0.208 0.230
ØP 3.5 3.71 0.137 0.146
mm inch
8/11
A
C
b1
A1
b
e
A2
ø
Q
D
L
L1
E
b2
Page 9
STH12NA60/FI - STW12NA60
TO-218 (SOT-93) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R – 12.2 – 0.480
Ø 4 4.1 0.157 0.161
mm inch
H
A
C
L5
Ø
L2
L3
R
L6
D
E
G
F
1
2 3
P025A
9/11
Page 10
STH12NA60/FI - STW12NA60
ISOWATT218 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122
D1 1.88 2.08 0.074 0.081
E 0.45 1 0.017 0.039
F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637
L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817
M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181
mm inch
L3
N
E
A
D
C
L5
L2
L6
D1
F
M
U
H
G
123
L1
L4
P025C
10/11
Page 11
STH12NA60/FI - STW12NA60
Information f urnished is believed t o be accurate and reliabl e. However, SGS-T HOMSON Micro electronics a ssumes no re sponsability for the
cons eq ue nce s o f u se o f s uc h i n fo rma ti o n nor f or a ny infrin ge me nt of pa te nt s or o th er r i gh ts o f t hir d pa rti e s w hic h ma y results fro m i t s us e. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as crit ical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserv ed
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Ita ly - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
.
11/11
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