Page 1
STH10NA50/FI
STW10NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
STH10NA50
STH10NA50FI
STW10NA50
■ TYPICAL R
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
DS(on)
DSS
500 V
500 V
500 V
= 0.7 Ω
R
DS(on)
< 0.8 Ω
< 0.8 Ω
< 0.8 Ω
I
D
9.6 A
5.6 A
9.6 A
o
C
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R
and gate charge, unequalled
DS(on)
ruggedness and superior switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
TO-247
3
2
1
3
2
TO-218 ISOWATT218
1
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW/STH10NA50 STH10NA50FI
V
V
V
I
DM
P
V
T
(•) Pulse width limited by safe operating area
November 1996
Drain-source Voltage (VGS = 0) 500 V
DS
Drai n -ga te V ol t ag e ( RGS = 20 kΩ)500V
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC9.65.6A
D
I
Drain Current (continuous) at Tc = 100 oC6.1 3.5A
D
(•) Drain Current (pulsed) 38 38 A
Total Dissipation at Tc = 25 oC15060W
tot
Derating Factor 1.2 0.48 W/
Insulation Withstand Voltage (DC) 4000 V
ISO
Stor age Tempe rat ure -65 to 15 0
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
o
C
1/11
Page 2
STH10NA50/FI STW10NA50
THERMAL DATA
TO-218/TO-247 ISOWA TT218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
E
I
AR
Thermal Resistance Junction-case Max 0.83 2.08
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Max im u m Le ad T em perature F or So l de rin g P ur p ose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Sing le Pul se Ava lan che Energy
AS
(starting Tj = 25 oC, ID = IAR, V
Repet iti ve Av alan che En erg y
AR
DD
= 50 V)
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
30
0.1
300
9.6 A
460 mJ
16 mJ
5.6 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. U nit
V
(BR) DSS
Drain-source
ID = 250 µA V
= 0 500 V
GS
Bre akdow n Vol tage
I
DSS
I
GSS
Zero Ga te V ol t ag e
Drain Current (V
GS
Gate -body Leaka ge
VDS = Max Rating
= 0)
VDS = Max Rating x 0.8 Tc = 125 oC
VGS = ± 30 V ± 10 0 nA
25
250
Current (VDS = 0)
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. U nit
V
R
GS(th)
DS(on)
Gate Threshold Voltage V
Stat ic Dra in-s ourc e On
= VGS ID = 250 µA 2.25 3 3.75 V
DS
VGS = 10V ID = 5 A 0.7 0.8 Ω
Resistance
I
D(on)
On State Dra in C urr e nt VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
10 A
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. U nit
g
(∗)Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 45A 4.5 7.4 S
= 0 1350
GS
200
50
1800
270
70
µA
µA
pF
pF
pF
2/11
Page 3
STH10NA50/FI STW10NA50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condition s Min. Typ. Max. U nit
t
d(on)
(di/dt)
Q
Q
Q
SWITCHING OFF
Symbol Parameter Test Condition s Min. Typ. Max. U nit
t
r(Voff)
t
SOURCE DRAIN DIODE
Turn-on Time
t
Rise Time
r
Turn-on Current Slope V
on
Tot al G a te C ha r ge
g
Gate -Sou rce Ch arge
gs
Gate-Drain Charge
gd
Off-voltage Rise Time
t
Fall Time
f
Cross-over Time
c
V
= 250 V ID = 5 A
DD
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 3)
= 400 V ID = 10 A
DD
RG = 47 Ω VGS = 10 V
(see te s t ci r cui t, fi g ure 5 )
VDD = 400 V ID = 10 A V
V
= 400 V ID = 10 A
DD
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
= 10 V 56
GS
18
25
25
35
200 A/µs
75 nC
9
26
15
15
25
20
20
35
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condition s Min. Typ. Max. U nit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
9.6
38
(pulsed)
V
(∗) F or w ar d On V ol t ag e ISD = 10 A VGS = 0 1.6 V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 10 A di/dt = 100 A/µs
SD
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
560
9
Charge
I
RRM
Reverse Recovery
32
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas for TO-218 and TO-247 Safe Operating Areas for ISOWATT218
A
A
ns
µC
A
3/11
Page 4
STH10NA50/FI STW10NA50
Thermal Impedeance For TO-218
Derating Curve For TO-218
Thermal Impedance For ISOWATT218
Derating Curve For ISOWATT218
Output Characteristics
4/11
Transfer Characteristics
Page 5
STH10NA50/FI STW10NA50
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Temperature
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
5/11
Page 6
STH10NA50/FI STW10NA50
Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Accidental Overload Area Source-drain Diode Forward Characteristics
6/11
Page 7
STH10NA50/FI STW10NA50
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveforms
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
7/11
Page 8
STH10NA50/FI STW10NA50
TO-247 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.208
A1 2.87 0.113
A2 1.5 2.5 0.059 0.098
b 1 1.4 0.039 0.055
b1 2.25 0.088
b2 3.05 3.43 0.120 0.135
C 0.4 0.8 0.015 0.031
D 20.4 21.18 0.803 0.833
e 5.43 5.47 0.213 0.215
E 15.3 15.95 0.602 0.628
L 15.57 0.613
L1 3.7 4.3 0.145 0.169
Q 5.3 5.84 0.208 0.230
ØP 3.5 3.71 0.137 0.146
mm inch
8/11
A
C
b1
A1
b
e
A2
ø
Q
D
L
L1
E
b2
Page 9
STH10NA50/FI STW10NA50
TO-218 (SOT-93) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R – 12.2 – 0.480
Ø 4 4.1 0.157 0.161
mm inch
H
A
C
L5
Ø
L2
L3
R
L6
D
E
G
F
1
2 3
P025A
9/11
Page 10
STH10NA50/FI STW10NA50
ISOWATT218 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122
D1 1.88 2.08 0.074 0.081
E 0.45 1 0.017 0.039
F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637
L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817
M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181
mm inch
L3
N
E
A
D
C
L5
L2
L6
D1
F
M
U
H
G
123
L1
L4
P025C
10/11
Page 11
STH10NA50/FI STW10NA50
Information f urnished is believed t o be accurate and reliabl e. However, SGS-T HOMSON Micro electronics a ssumes no re sponsability for the
cons eq ue nce s o f u se o f s uc h i n fo rma ti o n nor f or a ny infrin ge me nt of pa te nt s or o th er r i gh ts o f t hir d pa rti e s w hic h ma y results fro m i t s us e. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change with out notic e . This publication supersedes and replaces all inform ation previousl y suppli ed.
SGS-THOMSON Microelectronics products are not authorized for use as crit ical components in life support devices or systems without ex pre s s
written approval of SGS-THOMSON Microelectonics.
© 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Ita ly - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
.
11/11
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